公开(公告)号：US20130202103A1

公开(公告)日：2013-08-08

申请号：US13641968

申请日：2011-01-05

申请人： Qiang Chen ,  Hao Chen ,  Huijian Si ,  Gangjian Ying

发明人： Qiang Chen ,  Hao Chen ,  Huijian Si ,  Gangjian Ying

IPC分类号： G05F1/46

CPC分类号： G05F1/46 ,  H02M3/156

摘要： A Direct Current/Direct Current (DC/DC) converter for acquiring stabilized low voltage and a telephone power supply circuit based on the DC/DC converter are provided by the present invention. The DC/DC converter includes a power level circuit (1), which receives a dynamic voltage input from an outside circuit; a tank circuit (2), which uses energy-storage elements to store the electric energy outputted from the power level circuit and outputs the electric energy to a load; and a feedback control circuit (3), which receives the voltage from the output and feeds it back to the input of the tank circuit so as to control the connection and disconnection of the input of the tank circuit and further to control output voltage of the tank circuit. By the technical solution of the present invention, which uses the energy-storage inductance to store energy, limits the output, and acquires a stabilized low voltage from a wider range output voltage by using a feedback circuit, the power consumption is reduced, and the impact on the telephone is reduced at the time of picking up and/or hanging up the telephone.

摘要翻译： 本发明提供一种直流/直流（DC / DC）转换器，用于获取稳定的低电压和基于DC / DC转换器的电话电源电路。 DC / DC转换器包括功率电平电路（1），其接收从外部电路输入的动态电压; 储罐电路（2），其使用能量存储元件来存储从功率电平电路输出的电能并将电能输出到负载; 以及反馈控制电路（3），其从输出端接收电压并将其馈送回到储能电路的输入端，以便控制储能电路的输入的连接和断开，并进一步控制输出电压 坦克回路。 通过使用储能电感来存储能量的本发明的技术方案，通过使用反馈电路限制输出并从较宽范围的输出电压获取稳定的低电压，降低了功耗， 在拿起和/或挂断电话时，对电话的影响减小了。

公开(公告)号：US08492229B2

公开(公告)日：2013-07-23

申请号：US13087102

申请日：2011-04-14

申请人： Albert Birner ,  Qiang Chen

发明人： Albert Birner ,  Qiang Chen

IPC分类号： H01L21/336

CPC分类号： H01L29/7835 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/4941 ,  H01L29/7823

摘要： An semiconductor device is disclosed. The device includes a semiconductor body, a layer of insulating material disposed over the semiconductor body, and a region of gate electrode material disposed over the layer of insulating material. Also included are a source region adjacent to gate region and a drain region adjacent to the gate region. A gate connection is disposed over the semiconductor body, wherein the gate connection includes a region of gate electrode material electrically coupling a contact region to the gate electrode. An insulating region is disposed on the semiconductor body beneath the gate connection.

摘要翻译： 公开了一种半导体器件。 该器件包括半导体本体，设置在半导体本体上的绝缘材料层以及设置在绝缘材料层上的栅电极材料区域。 还包括与栅极区域相邻的源极区域和与栅极区域相邻的漏极区域。 栅极连接设置在半导体本体上，其中栅极连接包括将接触区域电耦合到栅电极的栅电极材料区域。 绝缘区域设置在栅极连接下方的半导体本体上。

公开(公告)号：US20120329994A1

公开(公告)日：2012-12-27

申请号：US13521431

申请日：2011-01-10

申请人： Qiang Chen ,  Huafang Lai

发明人： Qiang Chen ,  Huafang Lai

IPC分类号： C12P21/02 ,  C07K16/46

CPC分类号： C12N15/8257 ,  A61K2039/505 ,  C07K16/1081 ,  C07K2317/24 ,  C07K2317/76 ,  Y02A50/394

摘要： The present invention describes the plant-based production of a therapeutic antibody against West Nile Virus.

摘要翻译： 本发明描述了针对西尼罗河病毒的治疗性抗体的基于植物的生产。

公开(公告)号：US20120050127A1

公开(公告)日：2012-03-01

申请号：US13216451

申请日：2011-08-24

申请人： Tamami MARUYAMA ,  Tomoyuki Ohya ,  Tatsuo Furuno ,  Kunio Sawaya ,  Qiang Chen ,  Jianfeng Li ,  Shiwei Qu ,  Qiaowei Yuan

发明人： Tamami MARUYAMA ,  Tomoyuki Ohya ,  Tatsuo Furuno ,  Kunio Sawaya ,  Qiang Chen ,  Jianfeng Li ,  Shiwei Qu ,  Qiaowei Yuan

IPC分类号： H01Q19/10 ,  H01Q1/36

CPC分类号： H01Q15/002 ,  H01Q1/38

摘要： A reflectarray, including: a substrate; and a plurality of patches formed on each of areas into which a principal surface of the substrate is divided, wherein the plurality of patches are formed by including a gap.

摘要翻译： 反射镜，包括：底物; 以及形成在所述基板的主表面划分成的每个区域上的多个贴片，其中通过包括间隙形成所述多个贴片。

公开(公告)号：US20110262966A1

公开(公告)日：2011-10-27

申请号：US13060414

申请日：2009-08-27

申请人： Hugh S. Mason ,  Zhong Huang ,  Qiang Chen ,  Charles J. Arntzen ,  Shuo Yuan ,  Brooke Hjelm

发明人： Hugh S. Mason ,  Zhong Huang ,  Qiang Chen ,  Charles J. Arntzen ,  Shuo Yuan ,  Brooke Hjelm

IPC分类号： C12P1/00 ,  C12P21/00 ,  C12P19/34 ,  C12N15/63

CPC分类号： C12N15/8257 ,  C12N15/8203 ,  C12N15/8258

摘要： Plant viral vectors have great potential in rapid production of proteins, but no simple. Here a geminivirus-based system for high-yield and rapid production of oligomeric protein complexes, including virus-like particle (VLP) vaccines and monoclonal antibodies (mAbs) is described. In particular, a single vector that contains two non-competing replicons for transient expression in Nicotiana benthamiana leaves is described. The correct assembly of these subunit proteins into functional oligomeric structures (VLPs or full-size mAb) is also described. This system advances plant transient expression technology by eliminating the need for non-competing viruses, and thus, enhances the realistic commercial application of this technology for producing multiple-subunit protein complexes.

摘要翻译： 植物病毒载体在快速生产蛋白质方面具有很大的潜力，但并不简单。 这里描述了用于高产率和快速生产低聚蛋白复合物的双基因病毒的系统，包括病毒样颗粒（VLP）疫苗和单克隆抗体（mAb）。 特别地，描述了在烟草属烟草叶中含有两个用于瞬时表达的非竞争性复制子的单一载体。 还描述了将这些亚基蛋白正确组装到功能性寡聚结构（VLP或全尺寸mAb）中。 该系统通过消除对非竞争病毒的需求，推进植物瞬时表达技术，从而增强了该技术生产多亚基蛋白复合物的实际商业应用。

公开(公告)号：US07719025B2

公开(公告)日：2010-05-18

申请号：US11550650

申请日：2006-10-18

申请人： Qiang Chen ,  Gordon Ma

发明人： Qiang Chen ,  Gordon Ma

IPC分类号： H01L29/74

CPC分类号： H01L29/8618 ,  H01L27/0259 ,  H01L29/0692

摘要： A protective device in a semiconductor may comprise a substrate of a first conductivity type, an epitaxial layer formed on top of the substrate, a body area formed within the epitaxial layer of a second conductivity type extending from a top surface into the epitaxial layer, a first area of the first conductivity type extending from the top surface into the body area, an isolation area surrounding the first area, a ring area of the first conductivity type surrounding the isolation area, and a coupling structure for connecting the ring area with the substrate.

摘要翻译： 半导体中的保护装置可以包括第一导电类型的衬底，形成在衬底顶部上的外延层，形成在从顶表面延伸到外延层中的第二导电类型的外延层内的主体区域， 第一导电类型的从顶表面延伸到体区的第一区域，围绕第一区域的隔离区域，围绕隔离区域的第一导电类型的环区域和用于将环区域与衬底连接的耦合结构 。

公开(公告)号：US20100021477A1

公开(公告)日：2010-01-28

申请号：US12546850

申请日：2009-08-25

申请人： Ping Tsui ,  Lei Shi ,  Jin Lu ,  John Wheeler ,  Brian Whitaker ,  Lionella Borozdina-Birch ,  Juan C. Almagro ,  Bernard Amegadzie ,  Mark Tornetta ,  Ramachandra Reddy ,  David M. Knight ,  Jinquan Luo ,  Raymond W. Sweet ,  Qiang Chen

发明人： Ping Tsui ,  Lei Shi ,  Jin Lu ,  John Wheeler ,  Brian Whitaker ,  Lionella Borozdina-Birch ,  Juan C. Almagro ,  Bernard Amegadzie ,  Mark Tornetta ,  Ramachandra Reddy ,  David M. Knight ,  Jinquan Luo ,  Raymond W. Sweet ,  Qiang Chen

IPC分类号： A61K39/40 ,  C12N15/63 ,  C12N1/21 ,  C07K14/195 ,  C07K16/12 ,  C40B40/02 ,  C40B30/04

CPC分类号： C12N15/1037 ,  C40B30/04 ,  C40B40/02

摘要： Described and claimed herein are combinatorial synthetic Fab libraries displayed on a phage pIX protein. The libraries were built on scaffolds representing the most frequently used genes in human antibodies, which were diversified to mirror the variability of natural antibodies. After selection using a diverse panel of proteins, numerous specific and high-affinity Fabs were isolated. By a process called in-line maturation the affinity of some antibodies was improved up to one hundred-fold yielding low pM binders suitable for in vivo use. This work thus demonstrates the feasibility of displaying complex Fab libraries as pIX-fusion proteins for antibody discovery and lays the foundations for studies on the structure-function relationship of antibodies.

摘要翻译： 在此描述和要求保护的是在噬菌体pIX蛋白上显示的组合合成Fab文库。 图书馆建立在代表人抗体中最常用基因的支架上，多种多样化以反映天然抗体的变异性。 在使用不同的蛋白质组进行选择后，分离出许多特异性和高亲和力的Fab。 通过称为在线成熟的方法，一些抗体的亲和力得到改善，高达一百倍，产生适于体内使用的低pM粘合剂。 因此，该工作证明了展示复合Fab文库作为抗体发现的pIX融合蛋白的可行性，并为研究抗体的结构 - 功能关系奠定了基础。

公开(公告)号：US20080286887A1

公开(公告)日：2008-11-20

申请号：US11803646

申请日：2007-05-15

申请人： Jung-Suk Goo ,  Qiang Chen

发明人： Jung-Suk Goo ,  Qiang Chen

IPC分类号： H01L21/66 ,  G06F17/50

CPC分类号： G06F17/5036

摘要： According to one exemplary embodiment, a method for adjusting a transistor model for increased circuit simulation accuracy includes determining a first gate CD offset by matching a C-V test structure having a normalized channel current to an I-V test structure having the normalized channel current. The method further includes utilizing the first gate CD offset to adjust the transistor model for increased circuit simulation. The method also includes determining a second gate CD offset by varying I-V and C-V gate length parameters in the transistor model to cause simulated data from a test circuit to be approximately equal to measured data from the test circuit. The method further includes utilizing the second gate CD offset to adjust the transistor model.

摘要翻译： 根据一个示例性实施例，用于调整用于增加电路仿真精度的晶体管模型的方法包括通过将具有归一化信道电流的C-V测试结构与具有归一化通道电流的I-V测试结构相匹配来确定第一门CD偏移。 该方法还包括利用第一栅极CD偏移来调整晶体管模型以增加电路仿真。 该方法还包括通过在晶体管模型中改变I-V和C-V栅极长度参数来确定第二栅极CD偏移，以使来自测试电路的模拟数据近似等于来自测试电路的测量数据。 该方法还包括利用第二栅极CD偏移来调整晶体管模型。

公开(公告)号：US07363668B2

公开(公告)日：2008-04-29

申请号：US11231720

申请日：2005-09-21

申请人： Qiang Chen

发明人： Qiang Chen

IPC分类号： A47C17/00 ,  B63C9/08 ,  B63C9/28

CPC分类号： A47C15/006 ,  A47C27/122 ,  A47C31/005 ,  B63C9/30 ,  Y10S5/951

摘要： The embodiments relate to an active carbon cocofiber mattress with the functions of floating and life saving. The embodiment can be folded to form a floating bed. The mattress core comprises prefabricated solid and rigid cocofiber mattresses with an ultra-thick sandwiched layer sandwiched therebetween; thus, when integrated as a whole, has a specific gravity of less than about 1. On said cocofiber mattress, there is provided with a high elastic cocofiber mattress. Within the ultra-thick sandwiched layer, air holes and channels filled with active carbon are provided. Active carbon layers cover the surface of the cocofiber mattress core.

摘要翻译： 实施例涉及具有浮动和挽救生命的功能的活性炭椰子纤维床垫。 该实施例可以折叠以形成浮床。 床垫芯包括预制的固体和刚性可可纤维床垫，其中夹有超厚夹层; 因此，当整体整合时，具有小于约1的比重。在所述可可纤维床垫上设置有高弹性可可纤维床垫。 在超厚夹层内，设有充满活性炭的气孔和通道。 活性碳层覆盖椰子纤维床垫芯的表面。

公开(公告)号：US20080057635A1

公开(公告)日：2008-03-06

申请号：US11512000

申请日：2006-08-29

申请人： Qiang Chen

发明人： Qiang Chen

IPC分类号： H01L21/8234

CPC分类号： H01L29/78684 ,  H01L29/78609 ,  H01L29/78696

摘要： According to one exemplary embodiment, an asymmetric transistor includes a channel region having a drain-side channel portion and a source-side channel portion. The asymmetric transistor can be an asymmetric MOSFET. The source-side channel portion can comprise silicon, for example. The drain-side channel portion can comprise germanium, for example. The asymmetric transistor comprises a vertical heterojunction situated between the drain-side channel portion and the source-side channel portion. According to this exemplary embodiment, the bandgap of the source-side channel portion is higher than the bandgap of the drain-side channel portion and the carrier mobility of the drain-side channel portion is higher than the carrier mobility of the source-side channel portion. The transistor can further include a gate oxide layer situated over the drain-side channel portion and the source-side channel portion, and can also include a gate situated over the gate oxide layer.

摘要翻译： 根据一个示例性实施例，非对称晶体管包括具有漏极侧沟道部分和源极侧沟道部分的沟道区域。 非对称晶体管可以是非对称MOSFET。 例如，源侧沟道部分可以包括硅。 漏极侧通道部分可以包括例如锗。 不对称晶体管包括位于漏极侧沟道部分和源极侧沟道部分之间的垂直异质结。 根据该示例性实施例，源极侧沟道部分的带隙高于漏极侧沟道部分的带隙，并且漏极侧沟道部分的载流子迁移率高于源极侧沟道部分的载流子迁移率 一部分。 晶体管还可以包括位于漏极侧沟道部分和源极侧沟道部分之上的栅极氧化物层，并且还可以包括位于栅极氧化物层上方的栅极。