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71.发明授权Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask 有权面罩坯料的表面处理方法，掩模坯料的制造方法以及掩模的制造方法公开(公告)号：US08802334B2
公开(公告)日：2014-08-12
申请号：US13440539
申请日：2012-04-05
IPC分类号： G03F1/00
摘要： Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.
摘要翻译： 提供了一种掩模坯料表面处理方法，用于将具有薄膜的掩模坯料在基板上进行表面处理，使用处理液，形成转印图案的薄膜表面。 该薄膜由可以通过基于离子的干蚀刻蚀刻的材料制成。 包含在处理液中的蚀刻抑制剂的浓度为0.3ppb以下。
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公开(公告)号：US08663875B2
公开(公告)日：2014-03-04
申请号：US13201148
申请日：2010-01-29
IPC分类号： G03F1/48
摘要： A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
摘要翻译： 在透明基板上形成由含有金属和硅的材料构成的薄膜，通过图案化薄膜形成薄膜图案。 然后，预先修改薄膜图案的主表面和侧壁，以便即使在波长为200nm以下的曝光光为200nm以下的情况下，也能够防止薄膜图案的转印特性变化超过规定 累积地施加到已经形成的薄膜图案上。 主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。
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73.发明授权Mask blank, mask blank manufacturing method, transfer mask, and transfer mask manufacturing method 有权掩模毛坯，掩模坯制造方法，转印掩模和转印掩模制造方法公开(公告)号：US08404407B2
公开(公告)日：2013-03-26
申请号：US12973046
申请日：2010-12-20
IPC分类号： G03F1/20
CPC分类号： G03F1/32
摘要： According to certain embodiments, a mask blank for an electron beam writing is provided, capable of forming a resist pattern of a 3-dimensional topology through an one-time writing. The mask blank includes a substrate, a thin film formed on the substrate, and an electron beam resist film formed on the thin film. The electron beam resist film is made of a laminated film including at least a lower resist film and an upper resist film. The lower resist film and the upper resist film have different resist sensitivities with respect to an electron beam.
摘要翻译： 根据某些实施例，提供了一种用于电子束写入的掩模板，其能够通过一次写入形成三维拓扑的抗蚀剂图案。 掩模坯料包括基板，形成在基板上的薄膜和形成在薄膜上的电子束阻挡膜。 电子束抗蚀剂膜由至少包含下抗蚀剂膜和上抗蚀剂膜的层压膜制成。 下抗蚀剂膜和上抗蚀剂膜相对于电子束具有不同的抗蚀剂敏感性。
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公开(公告)号：US20120160281A1
公开(公告)日：2012-06-28
申请号：US13379495
申请日：2011-07-20
IPC分类号： B08B3/04
CPC分类号： D06F37/06
摘要： A washing apparatus is provided with a washing tub 2 whose rotating axis is in a horizontal direction or in a horizontally inclined direction, and has a concave and convex curve surface 22 installed on an inside wall surface of the washing tub 2 as well as has a baffle 25 protruding in the direction of the rotating axis installed. Then, by rotating the washing tub with a level of a cleaning liquid to be supplied to the washing tub 2 set to be higher than the rotating axis, a spurious non-gravity wash method is adopted in which damage to a washing article is small. In addition, by rotating the washing tub 2 with the level of the cleaning liquid to be supplied to the washing tub 2 set to be lower than the rotating axis, a beat wash method in which water saving effect is high is adopted.
摘要翻译： 洗涤装置具有旋转轴在水平方向或水平方向倾斜的洗涤桶2，并且具有安装在洗涤桶2的内壁面上的凹凸曲面22，并且具有 挡板25沿安装的旋转轴线方向突出。 然后，通过将清洗液的水平旋转至要设置为高于旋转轴线的洗涤桶2的清洗液的水平，采用了对洗涤用品的损伤小的虚假非重力洗涤方法。 此外，通过使洗涤桶2以提供给设定为低于旋转轴的洗涤桶2的清洗液的水平旋转，采用节水效果高的节拍方法。
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公开(公告)号：US08048594B2
公开(公告)日：2011-11-01
申请号：US12562617
申请日：2009-09-18
申请人： Masahiro Hashimoto , Hideaki Mitsui
发明人： Masahiro Hashimoto , Hideaki Mitsui
IPC分类号： G03F1/00
摘要： A photomask blank is for fabricating a phase shift mask having a light-transmissive substrate provided with a phase shift part adapted to give a predetermined phase difference to transmitted exposure light. The phase shift part is a dug-down part formed by digging down the light-transmissive substrate from a surface thereof to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmissive substrate at a portion where the phase shift part is not provided. The photomask blank includes a light-shielding part formed in a peripheral area around a transfer pattern area of the surface of the light-transmissive substrate and adapted to shield exposure light and further includes an etching mask film formed in the transfer pattern area of the surface of the light-transmissive substrate and made of a material being substantially dry-etchable with a chlorine-based gas, but not substantially dry-etchable with a fluorine-based gas, the etching mask film serving as an etching mask at least until the digging depth is reached when forming the dug-down part.
摘要翻译： 光掩模坯件用于制造具有透光基板的相移掩模，该透光基板设置有适于给予透射曝光的预定相位差的相移部分。 相移部分是通过从其表面向下挖掘透光性基板而形成的挖掘部分，其适用于相对于透过透光基板的曝光光产生预定相位差， 不设置相移部。 光掩模坯料包括形成在透光基板的表面的转印图案区域周围的周边区域中的遮光部，其适于屏蔽曝光光，并且还包括形成在表面的转印图案区域中的蚀刻掩模膜 由基于氯的气体基本可干蚀刻的材料制成，但基本上不能用氟基气体干法蚀刻的材料制成，所述蚀刻掩模膜至少直到挖掘为止 在形成挖掘部分时达到深度。
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公开(公告)号：US08026024B2
公开(公告)日：2011-09-27
申请号：US12441319
申请日：2007-09-14
申请人： Masahiro Hashimoto
发明人： Masahiro Hashimoto
IPC分类号： G03F1/00
摘要： To provide a mask blank which can eliminate pattern defects by preventing a resist pattern from disappearing at the time of manufacturing a transfer mask in semiconductor design rule (DRAM hp65 nm or below), and to provide a mask.A mask blank including a thin film for forming a mask pattern, the thin film being formed on a substrate, and a resist film formed over the thin film, wherein the thin film and the resist film sandwich an adhesion layer that is bonded to the thin film and the resist film, and the adhesion layer prevents, during development of the resist film in patterning of the resist film, collapse of the patterned resist film.
摘要翻译： 为了提供一种能够通过防止半导体设计规则（DRAM hp65nm或更低）制造转印掩模时抗蚀剂图案消失而消除图案缺陷的掩模板，并提供掩模。 一种掩模坯料，其包括用于形成掩模图案的薄膜，所述薄膜形成在基板上，以及形成在所述薄膜上的抗蚀剂膜，其中所述薄膜和所述抗蚀剂膜夹着粘合到所述薄膜上的粘合层 膜和抗蚀剂膜，并且在图案化抗蚀剂膜中的抗蚀剂膜的显影期间，粘合层防止图案化抗蚀剂膜的塌陷。
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77.发明申请METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权制造转移掩模的方法和制造半导体器件的方法公开(公告)号：US20110217635A1
公开(公告)日：2011-09-08
申请号：US13122680
申请日：2010-10-08
IPC分类号： G03F1/00
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译： 本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。 用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。 铬基薄膜由含铬的材料制成。 将具有200nm以下波长的曝光光施加到转印掩模。 在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序 使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及 通过蚀刻去除铬基薄膜。 该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。
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公开(公告)号：US07972750B2
公开(公告)日：2011-07-05
申请号：US12097699
申请日：2006-12-18
申请人： Masahiro Hashimoto
发明人： Masahiro Hashimoto
IPC分类号： G03F1/00
摘要： The mask blank is patterned to form a corresponding mask having a light shielding film pattern with enhanced resolution. A mask blank (10) on which a chemically amplified resist film (20) is formed, the mask blank (10) comprising a substrate (12), a light shielding film (13) provided on the substrate (12), and a resist underlying film (18) provided on the light shielding film (13), for suppressing the deactivation of the chemically amplified resist film (20). When the light shielding film (13) is etched using the patterned chemically amplified resist film (20) as a mask, the etching rate of the deactivation preventive film (18) is higher than the etching rate of the chemically amplified resist film (20).
摘要翻译： 将掩模坯料图案化以形成具有增强分辨率的遮光膜图案的对应掩模。 其上形成有化学放大型抗蚀剂膜（20）的掩模板（10），包括基板（12）的掩模板（10），设置在基板（12）上的遮光膜（13））和抗蚀剂 设置在遮光膜（13）上的基底膜（18），用于抑制化学放大抗蚀剂膜（20）的失活。 当使用图案化的化学放大抗蚀剂膜（20）作为掩模蚀刻遮光膜（13）时，防失真膜（18）的蚀刻速率高于化学放大抗蚀剂膜（20）的蚀刻速率， 。
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公开(公告)号：US07833681B2
公开(公告)日：2010-11-16
申请号：US11898587
申请日：2007-09-13
摘要： A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.
摘要翻译： 掩模坯料配备有形成在基板上形成的掩模图案的薄膜和形成在薄膜上方的化学放大型抗蚀剂膜。 在掩模坯料中，在薄膜和抗蚀剂膜之间设置防止从抗蚀剂膜的底部到抗蚀剂膜内部阻止抗蚀剂膜的化学放大功能的物质的移动的保护膜。 掩模坯料将形成在基板上的转印图案的线宽尺寸的误差抑制为转印掩模的转印图案线宽度的设计尺寸（实际尺寸误差），并且还抑制高达10nm的线性度。
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公开(公告)号：US20060259591A1
公开(公告)日：2006-11-16
申请号：US11431525
申请日：2006-05-11
申请人： Masahiro Hashimoto
发明人： Masahiro Hashimoto
IPC分类号： G06F15/16
CPC分类号： H04L67/06 , H04L67/125 , H04L67/322 , H04L2012/2849
摘要： In a client-server system comprising a plurality of client terminal devices and a server device which transmits and receives information to and from the plurality of client terminal devices, the server device comprises an acquisition unit which obtains a priority of the client terminal device from a priority storage unit, based on a control request from the client terminal device, a determination unit which determines whether or not the control request is accepted, based on the obtained priority, and an execution unit which executes control in response to the control request when the determination unit determines that the control request is accepted.
摘要翻译： 在包括多个客户终端装置的客户服务器系统和向多个客户终端装置发送信息的服务器装置和服务器装置之间，服务器装置包括获取单元，该获取单元从客户端终端装置 优先级存储单元，基于来自客户终端设备的控制请求，确定单元，其基于获得的优先级来确定控制请求是否被接受;以及执行单元，当执行控制请求时，响应于控制请求执行控制 确定单元确定控制请求被接受。
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