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    Magnetoresistance element, head, sensing system, and magnetic storing system
    71.
    发明授权
    Magnetoresistance element, head, sensing system, and magnetic storing system 失效
    磁阻元件，磁头，传感系统和磁存储系统

    公开(公告)号：US06665153B1

    公开(公告)日：2003-12-16

    申请号：US09626822

    申请日：2000-07-27

    申请人： Kazuhiko Hayashi

    发明人： Kazuhiko Hayashi

    IPC分类号： G11B539

    CPC分类号： G11B5/3903 ,  G01R33/09 ,  G11B5/313 ,  G11B5/3932

    摘要： A MR element is provided, which allows the sense current to flow through only the inner region of a MR layer to bypass its end regions, thereby realizing high magnetic sensitivity and good domain control in the sensing region. The element comprises (a) a MR layer having a width corresponding to a recording track width of an applicable magnetic recording medium; (b) a pair of vertical biasing layers disposed at each side of the MR layer to be overlapped with each end of the MR layer; inner opposing ends of the pair of vertical biasing layers being contacted with the MR layer; (c) a pair of dielectric layers formed on the pair of biasing layers; inner opposing ends of the pair of dielectric layers being contacted with the MPR layer; and (d) a pair of electrode layers formed on the pair of dielectric layers; inner opposing ends of the pair of electrode layers being contacted with the MR layer, thereby electrically connecting the pair of electrode layers to the MR layer; a distance between the inner opposing ends of the pair of electrode layers being smaller than a width of the MR layer. The pair of electrode layers may be completely separated from the pair of vertical biasing layers by the pair of dielectric layers or contacted with the pair of vertical biasing layers by way of openings in the pair of dielectric layers.

    摘要翻译： 提供MR元件，其允许感测电流仅流过MR层的内部区域以绕过其端部区域，从而在感测区域中实现高磁敏感性和良好的域控制。 元件包括（a）具有对应于可应用的磁记录介质的记录磁道宽度的宽度的MR层; （b）设置在MR层的每一侧的一对垂直偏置层，以与MR层的每个端部重叠; 一对垂直偏压层的内相对端与MR层接触; （c）形成在所述一对偏置层上的一对电介质层; 一对电介质层的内相对端与MPR层接触; 和（d）形成在所述一对电介质层上的一对电极层; 一对电极层的内相对端与MR层接触，从而将该对电极层电连接到MR层; 一对电极层的内部相对端之间的距离小于MR层的宽度。 一对电极层可以通过该对电介质层与一对垂直偏置层完全分离，或者通过一对电介质层中的开口与一对垂直偏压层接触。

    Magneto-resistive element and magnetic head for data writing/reading
    74.
    发明授权
    Magneto-resistive element and magnetic head for data writing/reading 有权
    用于数据写入/读取的磁阻元件和磁头

    公开(公告)号：US06490139B1

    公开(公告)日：2002-12-03

    申请号：US09492229

    申请日：2000-01-27

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967

    摘要： A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a first magnetic layer formed on the first electrode, a non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer. The average surface roughness of the first electrode is equal to or smaller than 0.3 nm. Since the first electrode has such the small average surface roughness, the non-magnetic layer formed on the first electrode layer is flattened, thus, current leakage is prevented. The first electrode is made of at least one of Ta, Zr, Ti, Hf, W, Mo, Y, V, Nb, Au, Ag, Pd, and Pt which has strong bond strength. Since the first electrode has strong bond strength, exfoliation of the first electrode from the layers contacting the first electrode does not occur.

    摘要翻译： 磁阻元件包括第一电极，形成在电阻根据磁场改变的第一电极上的磁阻层和形成在磁阻层上的第二电极层。 磁阻层具有形成在第一电极上的第一磁性层，形成在第一磁性层上的非磁性层和形成在非磁性层上的第二磁性层。 第一电极的平均表面粗糙度等于或小于0.3nm。 由于第一电极具有如此小的平均表面粗糙度，所以形成在第一电极层上的非磁性层变扁平化，从而防止了电流泄漏。 第一电极由具有强粘合强度的Ta，Zr，Ti，Hf，W，Mo，Y，V，Nb，Au，Ag，Pd和Pt中的至少一种制成。 由于第一电极具有强的结合强度，所以不会发生第一电极与接触第一电极的层的剥离。

    Carbapenem compounds
    75.
    发明授权
    Carbapenem compounds 失效
    碳青霉烯化合物

    公开(公告)号：US06479478B1

    公开(公告)日：2002-11-12

    申请号：US09786718

    申请日：2001-03-08

    申请人： Takao Abe ,  soh-ichi Kaneda ,  Kazuhiko Hayashi

    发明人： Takao Abe ,  soh-ichi Kaneda ,  Kazuhiko Hayashi

    IPC分类号： C07D47720

    CPC分类号： C07D477/20

    摘要： It is provided carbapenem compounds represented by the following formula (I): wherein R is hydrogen atom, or substituted or unsubstituted lower alkyl group; and, n is an integer of 1 or 2, or a pharmaceutically acceptable salt thereof, and an antibacterial compositions containing these compounds as an active ingredient. These carbapenem compounds exhibit potent antibacterial activities and are excellent in the resistance against renal dehydropeptidase.

    摘要翻译： 提供由下式（I）表示的碳青霉烯化合物：其中R是氢原子或取代或未取代的低级烷基; 和n为1或2的整数，或其药学上可接受的盐，以及含有这些化合物作为有效成分的抗菌组合物。 这些碳青霉烯类化合物显示出有效的抗菌活性，并且对抗脱水肽酶具有优异的抗性。

    Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same
    76.
    发明授权
    Magnetoresistance effect element, and magnetoresistance effect sensor and magnetic information recording and playback system using same 有权
    磁阻效应元件和磁阻效应传感器以及使用其的磁信息记录和回放系统

    公开(公告)号：US06456468B1

    公开(公告)日：2002-09-24

    申请号：US09593509

    申请日：2000-06-14

    申请人： Kazuhiko Hayashi

    发明人： Kazuhiko Hayashi

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996 ,  H01F10/3268 ,  Y10T428/1143 ,  Y10T428/26 ,  Y10T428/265

    摘要： The magnetoresistance effect element according to the present invention comprises an anti-ferromagnetic layer, a fixed magnetic layer, a non-magnetic layer and a free magnetic layer laminated successively onto a base layer. The anti-ferromagnetic layer is a single layer film or multiple layer film comprising Ni oxide, Co oxide or Fe oxide as a principal component, or a mixture of these. An adhesive layer for preventing peeling due to heat generated by the flow of current is provided between the base layer and the anti-ferromagnetic layer. By providing an adhesive layer between the base layer and the ferromagnetic layer in this way, the adhesive force between the base layer and the anti-ferromagnetic layer is increased, and therefore peeling and the like does not arise even when temperature changes occur in the magnetoresistance effect element.

    摘要翻译： 根据本发明的磁阻效应元件包括依次层叠在基底层上的反铁磁层，固定磁性层，非磁性层和自由磁性层。 反铁磁层是以氧化镍，氧化钴或Fe氧化物为主要成分的单层膜或多层膜，或它们的混合物。 在基底层和反铁磁性层之间设置用于防止由于电流产生的热而产生的剥离的粘合剂层。通过这种方式在基底层和铁磁性层之间提供粘合剂层， 即使在磁阻效应元件发生温度变化的情况下，也不会产生基层和反铁磁性层的剥离等。

    High temperature oxide superconducting wire and method of manufacturing thereof
    77.
    发明授权
    High temperature oxide superconducting wire and method of manufacturing thereof 有权
    高温氧化物超导线及其制造方法

    公开(公告)号：US06311385B1

    公开(公告)日：2001-11-06

    申请号：US09264570

    申请日：1999-03-08

    申请人： Munetsugu Ueyama ,  Kazuhiko Hayashi

    发明人： Munetsugu Ueyama ,  Kazuhiko Hayashi

    IPC分类号： H01L3924

    CPC分类号： H01L39/143 ,  H01L39/248 ,  Y10S505/739 ,  Y10S505/74 ,  Y10S505/741 ,  Y10T29/49014

    摘要： A high temperature oxide superconducting wire is provided which is capable of preventing metal located on the outer periphery of the superconducting wire from diffusing into a superconductor to achieve restriction of reduction in the critical current density. The high temperature oxide superconducting wire includes a high temperature oxide superconductor 1, a sheathing body 2 formed of material containing silver for coating the high temperature oxide superconductor 1, a heat-resistant oxide ceramic material 3 for coating the sheathing body 2, and a coating body 4 mwhich is inactive relative to the heat-resistant oxide ceramic material 3 in a high temperature oxidative atmosphere.

    摘要翻译： 提供了一种高温氧化物超导线，其能够防止位于超导线的外周上的金属扩散到超导体中，以实现临界电流密度降低的限制。 高温氧化物超导线包括高温氧化物超导体1，由含有用于涂覆高温氧化物超导体1的银的材料形成的护套体2，用于涂覆护套体2的耐热氧化物陶瓷材料3和涂层 身体4m，其在高温氧化气氛中相对于耐热氧化物陶瓷材料3是无活性的。

    Machine start controlling apparatus
    79.
    发明授权
    Machine start controlling apparatus 有权
    机器启动控制装置

    公开(公告)号：US6144113A

    公开(公告)日：2000-11-07

    申请号：US172618

    申请日：1998-10-15

    申请人： Kazuhiko Hayashi ,  Satoru Matsumoto

    发明人： Kazuhiko Hayashi ,  Satoru Matsumoto

    IPC分类号： B60R25/04 ,  H04L9/20

    CPC分类号： B60R25/04

    摘要： An immobilizer ECU (20) compares an internally stored reference code with a key code transmitted from a key (10). An engine ECU (24) transmits a rolling code A when an engine speed reaches 500 rpm. The immobilizer ECU (20) transmits a rolling code B when the codes coincide with each other. The engine ECU (24) will stop an engine if it cannot receive the rolling code B within a prescribed period of time. Further, there is provided a counter CIMMOF which is incremented at the beginning of such a process. The counter CIMMOF is reset only when the process is normally completed. If an ignition is turned off prior to transmission and reception of the rolling codes, the counter CIMMOF will be counted up. According to a value of the counter CIMMOF, a period of waiting for the rolling code B is gradually shortened. Further, when the process is completed or a backup power supply to a backup memory (24d) is cut off, a time to transmit and receive the rolling codes is advanced. Thus, the situation where the engine will be able to start due to disconnection of a communication line or the like is prevented.

    摘要翻译： 防盗器ECU（20）将内部存储的参考码与从钥匙（10）发送的钥匙码进行比较。 当发动机转速达到500rpm时，发动机ECU（24）发送滚动码A. 当代码彼此一致时，防盗器ECU（20）发送滚动码B. 如果发动机ECU（24）在规定的时间内不能接收滚动码B，则停止发动机。 此外，提供了一个计数器CIMMOF，该计数器在这种处理开始时递增。 仅当过程正常完成时，计数器CIMMOF才会复位。 如果在发送和接收滚动码之前关闭点火，计数器CIMMOF将被计数。 根据计数器CIMMOF的值，等待滚动码B的时间逐渐缩短。 此外，当处理完成或备用存储器（24d）的备用电源被切断时，提前发送和接收滚动代码的时间。 因此，防止由于通信线路等的断开而发动机能够启动的情况。