利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

441 条记录 (耗时 0.031 秒)

    Backside illuminated imaging sensor with silicide light reflecting layer
    71.
    发明授权
    Backside illuminated imaging sensor with silicide light reflecting layer 有权
    具有硅化物光反射层的背面照明成像传感器

    公开(公告)号：US07989859B2

    公开(公告)日：2011-08-02

    申请号：US12142678

    申请日：2008-06-19

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14643

    摘要： A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.

    摘要翻译： 背面照明成像传感器包括半导体层，金属互连层和硅化物光反射层。 半导体层具有前表面和后表面。 在半导体层内形成包括光电二极管区域的成像像素。 金属互连层电耦合到光电二极管区域，并且硅化物光反射层耦合在金属互连层和半导体层的前表面之间。 在操作中，光电二极管区域从半导体层的背面接收光，其中接收的光的一部分通过光电二极管区域传播到硅化物光反射层。 硅化物光反射层被配置为反射从光电二极管区域接收的光的部分。

    Trench transfer gate for increased pixel fill factor
    75.
    发明授权
    Trench transfer gate for increased pixel fill factor 有权
    沟槽传输门，用于增加像素填充因子

    公开(公告)号：US08658956B2

    公开(公告)日：2014-02-25

    申请号：US12582585

    申请日：2009-10-20

    申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

    发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

    IPC分类号： H01L31/112

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    摘要： An image sensor provides high scalability and reduced image lag. The sensor includes a first imaging pixel that has a first photodiode region formed in a substrate of the image sensor. The sensor also includes a first vertical transfer transistor coupled to the first photodiode region. The first vertical transfer transistor can be used to establish an active channel. The active channel typically extends along the length of the first vertical transfer transistor and couples the first photodiode region to a floating diffusion.

    摘要翻译： 图像传感器提供高可扩展性和减少图像滞后。 传感器包括具有形成在图像传感器的基板中的第一光电二极管区域的第一成像像素。 传感器还包括耦合到第一光电二极管区域的第一垂直传输晶体管。 第一垂直传输晶体管可用于建立有源通道。 有源沟道通常沿着第一垂直传输晶体管的长度延伸，并将第一光电二极管区域耦合到浮动扩散。

    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE
    78.
    发明申请
    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US20130009043A1

    公开(公告)日：2013-01-10

    申请号：US13619879

    申请日：2012-09-14

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC分类号： H01L31/113 ,  H01L27/148

    CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.

    摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和控制电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。 控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE
    79.
    发明申请
    IMAGE SENSOR HAVING SUPPLEMENTAL CAPACITIVE COUPLING NODE 有权
    具有补充电容耦合节点的图像传感器

    公开(公告)号：US20120153123A1

    公开(公告)日：2012-06-21

    申请号：US12972188

    申请日：2010-12-17

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

    IPC分类号： H01L27/146

    CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

    摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.

    摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。 在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。