公开(公告)号：US08319301B2

公开(公告)日：2012-11-27

申请号：US12029392

申请日：2008-02-11

申请人： Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  WeiDong Qian ,  Ashish Shah ,  Howard E. Rhodes

发明人： Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  WeiDong Qian ,  Ashish Shah ,  Howard E. Rhodes

IPC分类号： H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.

摘要翻译： 图像传感器包括设置在半导体衬底中的至少一个感光元件。 金属导体可以设置在半导体衬底上。 过滤器可以设置在至少两个单独的金属导体之间，并且微透镜可以设置在过滤器上。 可以在金属导体和半导体衬底之间和/或各个金属导体之间设置绝缘体材料。 可以去除绝缘体材料，使得过滤器可以设置在半导体衬底上。

公开(公告)号：US20090200622A1

公开(公告)日：2009-08-13

申请号：US12029392

申请日：2008-02-11

申请人： Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  WeiDong Qian ,  Ashish Shah ,  Howard E. Rhodes

发明人： Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  WeiDong Qian ,  Ashish Shah ,  Howard E. Rhodes

IPC分类号： H01L31/00 ,  G01T1/24

CPC分类号： H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.

摘要翻译： 图像传感器包括设置在半导体衬底中的至少一个感光元件。 金属导体可以设置在半导体衬底上。 过滤器可以设置在至少两个单独的金属导体之间，并且微透镜可以设置在过滤器上。 可以在金属导体和半导体衬底之间和/或各个金属导体之间设置绝缘体材料。 可以去除绝缘体材料，使得过滤器可以设置在半导体衬底上。

公开(公告)号：US08330195B2

公开(公告)日：2012-12-11

申请号：US12967759

申请日：2010-12-14

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US20110085067A1

公开(公告)日：2011-04-14

申请号：US12967759

申请日：2010-12-14

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H04N5/335

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US08183510B2

公开(公告)日：2012-05-22

申请号：US12559307

申请日：2009-09-14

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Ashish Shah ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Ashish Shah ,  Howard E. Rhodes

IPC分类号： H01L27/00 ,  H01L31/00 ,  H01J5/16

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643

摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.

摘要翻译： 图像传感器包括光学传感器区域，电介质和金属层的堆叠以及嵌入层。 光学传感器设置在半导体衬底内。 电介质层和金属层堆叠在光学传感器区域上方的半导体衬底的前侧。 嵌入式聚焦层设置在由支撑栅格支撑的背面照明（BSI）图像传感器或由半导体衬底组成的支撑栅格上的半导体衬底的背面。

公开(公告)号：US07875918B2

公开(公告)日：2011-01-25

申请号：US12430006

申请日：2009-04-24

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H01L31/062

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US20100271524A1

公开(公告)日：2010-10-28

申请号：US12430006

申请日：2009-04-24

申请人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Ashish Shah ,  Rongsheng Yang ,  Duli Mao ,  Yin Qian ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14601

摘要： An image sensor pixel includes a substrate, a first epitaxial layer, a collector layer, a second epitaxial layer and a light collection region. The substrate is doped to have a first conductivity type. The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well. The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type. The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type. The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer. The light collection region is also doped to have the second conductivity type.

摘要翻译： 图像传感器像素包括基板，第一外延层，集电极层，第二外延层和光收集区域。 衬底被掺杂以具有第一导电类型。 第一外延层设置在衬底上并掺杂以具有第一导电类型。 集电极层选择性地设置在第一外延层的至少一部分上并被掺杂以具有第二导电类型。 第二外延层设置在集电极层上并掺杂以具有第一导电类型。 光收集区域收集光生电荷载流子并且设置在第二外延层内。 光收集区域也被掺杂以具有第二导电类型。

公开(公告)号：US20100038523A1

公开(公告)日：2010-02-18

申请号：US12559307

申请日：2009-09-14

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Ashish Shah ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Ashish Shah ,  Howard E. Rhodes

IPC分类号： H01J40/14 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643

摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.

摘要翻译： 图像传感器包括光学传感器区域，电介质和金属层的堆叠以及嵌入层。 光学传感器设置在半导体衬底内。 电介质层和金属层堆叠在光学传感器区域上方的半导体衬底的前侧。 嵌入式聚焦层设置在由支撑栅格支撑的背面照明（BSI）图像传感器或由半导体衬底组成的支撑栅格上的半导体衬底的背面。

公开(公告)号：US08569856B2

公开(公告)日：2013-10-29

申请号：US13288731

申请日：2011-11-03

申请人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Keh-Chiang Ku ,  Vincent Venezia ,  Duli Mao ,  Wei Zheng ,  Howard E. Rhodes

IPC分类号： H01L21/00

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L23/522 ,  H01L24/05 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/6835 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/05552 ,  H01L2924/00

摘要： Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.

摘要翻译： 半导体器件的实施例包括半导体衬底和设置在半导体衬底中的至少从半导体衬底的第一侧至半导体衬底的第二侧延伸的空腔。 半导体器件还包括设置在半导体衬底的第一侧上并涂覆空腔的侧壁的绝缘层。 包括接合焊盘的导电层设置在绝缘层上。 导电层延伸到空腔中并且连接到设置在半导体衬底的第二侧下方的金属叠层。 贯穿硅通孔焊盘设置在半导体衬底的第二侧下方并连接到金属堆叠。 贯穿硅通孔焊盘的位置是接受硅通孔。

公开(公告)号：US08482639B2

公开(公告)日：2013-07-09

申请号：US12028590

申请日：2008-02-08

申请人： Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

发明人： Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H04N9/64

CPC分类号： H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

摘要： An imaging sensor pixel array includes a semiconductor substrate, a plurality of active pixels and at least one black reference pixel. The plurality of active pixels are disposed in the semiconductor substrate for capturing an image. Each of the active pixels includes a first region for receiving light including a p-n junction for accumulating an image charge and active pixel circuitry coupled to the first region to readout the image charge. The black reference pixel is also disposed within the semiconductor substrate for generating a black level reference value. The black reference pixel includes a second region for receiving light without a p-n junction and black pixel circuitry coupled to the photodiode region without the p-n junction to readout a black level reference signal.