公开(公告)号：US08815398B2

公开(公告)日：2014-08-26

申请号：US12583391

申请日：2009-08-20

申请人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

发明人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

IPC分类号： B32B9/00

CPC分类号： G06F3/045 ,  B82Y30/00 ,  Y10T428/26 ,  Y10T428/30

摘要： A carbon nanotube film includes a plurality of first carbon nanotubes and a plurality of second carbon nanotubes. The first carbon nanotubes are orientated primarily along a same direction. The second carbon nanotubes have different orientations from that of the plurality of first carbon nanotubes. Each of at least one portion of the second carbon nanotubes contacts with at least two adjacent first carbon nanotubes.

摘要翻译： 碳纳米管膜包括多个第一碳纳米管和多个第二碳纳米管。 第一碳纳米管主要沿相同的方向取向。 第二碳纳米管具有与多个第一碳纳米管不同的取向。 第二碳纳米管的至少一部分中的每一个与至少两个相邻的第一碳纳米管接触。

公开(公告)号：US08603304B2

公开(公告)日：2013-12-10

申请号：US13588222

申请日：2012-08-17

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： C23C14/34

CPC分类号： C01B33/06 ,  C30B23/00 ,  C30B29/10 ,  C30B29/60

摘要： A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, a silicon substrate and a growing device, and the growing device including a reacting room are provided. Secondly, a silicon dioxide layer is formed on a surface of the silicon substrate. Thirdly, a titanium layer is formed on the silicon dioxide layer. Fourthly, the silicon substrate is placed into the reacting room, and the reacting room is heated to a temperature of 500˜1000° C. Finally, a plurality of nickel cluster is formed onto the surface of the silicon substrate.

摘要翻译： 一种制造硅化镍纳米线的方法，该方法包括以下步骤。 首先，提供硅衬底和生长装置，并且提供包括反应室的生长装置。 其次，在硅衬底的表面上形成二氧化硅层。 第三，在二氧化硅层上形成钛层。 第四，将硅衬底放置在反应室中，并将反应室加热到500〜1000℃的温度。最后，在硅衬底的表面上形成多个镍簇。

公开(公告)号：US08288723B2

公开(公告)日：2012-10-16

申请号：US12005741

申请日：2007-12-28

申请人： Li-Na Zhang ,  Chen Feng ,  Liang Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Li-Na Zhang ,  Chen Feng ,  Liang Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01J37/26

CPC分类号： H01J37/20 ,  H01J37/26 ,  Y10T29/49002

摘要： A transmission electron microscope (TEM) micro-grid includes a metallic grid and a carbon nanotube film structure covered thereon. A method for making a TEM micro-grid includes the steps of: (a) providing an array of carbon nanotubes, quite suitably, providing a super-aligned array of carbon nanotubes; (b) drawing a carbon nanotube film from the array of carbon nanotubes; (c) covering the carbon nanotube film on a metallic grid, and treating the carbon nanotube film and the metallic grid with an organic solvent.

摘要翻译： 透射电子显微镜（TEM）微格栅包括金属栅格和覆盖在其上的碳纳米管膜结构。 制造TEM微格栅的方法包括以下步骤：（a）提供碳纳米管阵列，非常合适地提供碳纳米管的超对准阵列; （b）从碳纳米管阵列中抽出碳纳米管膜; （c）在金属网格上覆盖碳纳米管膜，并用有机溶剂处理碳纳米管膜和金属栅格。

公开(公告)号：US08053760B2

公开(公告)日：2011-11-08

申请号：US12384238

申请日：2009-04-02

申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/786

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/0013 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The carbon nanotube structure is connected to both the source electrode and the drain electrode, and an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层包括由碳纳米管构成的碳纳米管结构。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 碳纳米管结构与源电极和漏电极连接，并且在碳纳米管结构的每个碳纳米管和半导体层的表面之间存在角度，角度范围为约0度至约15度。

公开(公告)号：US07947977B2

公开(公告)日：2011-05-24

申请号：US12384309

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L35/24

CPC分类号： H01L29/458 ,  B82Y10/00 ,  H01L29/4908 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/936

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is electrically connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The at least one of the source electrode, drain electrode, and the gate electrode includes a metallic carbon nanotube layer. The metallic carbon nanotube layer includes a plurality of metallic carbon nanotubes.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导电层电连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 源电极，漏电极和栅电极中的至少一个包括金属碳纳米管层。 金属碳纳米管层包括多个金属碳纳米管。

公开(公告)号：US07923731B2

公开(公告)日：2011-04-12

申请号：US12384292

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube layer, and the carbon nanotube layer comprises a plurality of semiconducting carbon nanotubes.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导体层包括碳纳米管层，碳纳米管层包含多个半导体碳纳米管。

公开(公告)号：US20100317409A1

公开(公告)日：2010-12-16

申请号：US12653244

申请日：2009-12-10

申请人： Kai-Li Jiang ,  Liang Liu ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Liang Liu ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： G06F3/041 ,  H04W88/02

CPC分类号： G06F3/0412 ,  B82Y20/00 ,  B82Y30/00 ,  G04G17/083 ,  G06F1/1626 ,  G06F1/1652 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  H04M1/0202 ,  H04M1/0214 ,  H04M1/0268 ,  H04M2250/22 ,  Y10S977/724

摘要： A carbon nanotube based flexible mobile phone includes a flexible body including a flexible display panel a flexible touch panel, and a communicating system received therein. The flexible touch panel is disposed on a surface of the flexible display panel. The flexible touch panel includes at least one carbon nanotube layer including a carbon nanotube film.

摘要翻译： 一种基于碳纳米管的柔性移动电话包括柔性主体，其包括柔性显示面板，柔性触摸面板以及其中接收的通信系统。 柔性触摸面板设置在柔性显示面板的表面上。 柔性触摸面板包括至少一个包含碳纳米管膜的碳纳米管层。

公开(公告)号：US07754526B2

公开(公告)日：2010-07-13

申请号：US12384245

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/20

CPC分类号： H01L51/102 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/842 ,  Y10S977/932

摘要： A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.

摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供生长衬底; 在生长衬底上施加催化剂层; 在其中具有保护气体的炉中用催化剂层加热生长衬底，以100:1至100:10的比例供应碳源气体和载气，并在生长衬底上生长碳纳米管层; 形成源电极，漏电极和栅电极; 并且用绝缘层覆盖碳纳米管层，其中源电极和漏电极电连接到单壁碳纳米管层，栅电极与单壁碳纳米管层相对并与其电绝缘。

公开(公告)号：US20100124645A1

公开(公告)日：2010-05-20

申请号：US12583387

申请日：2009-08-20

申请人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

发明人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

IPC分类号： B32B9/00 ,  D01F9/12 ,  C01B31/00

CPC分类号： G06F3/045 ,  B82Y10/00 ,  B82Y30/00 ,  Y10T428/30

摘要： A carbon nanotube film includes a plurality of carbon nanotube strings and one or more carbon nanotubes. The plurality of carbon nanotube strings are separately arranged and located side by side. Distances between adjacent carbon nanotube strings are changed when a force is applied. One or more carbon nanotubes are located between adjacent carbon nanotube strings.

摘要翻译： 碳纳米管膜包括多个碳纳米管串和一个或多个碳纳米管。 多个碳纳米管串分开布置并并排设置。 施加力时，相邻碳纳米管柱之间的距离发生变化。 一个或多个碳纳米管位于相邻的碳纳米管串之间。

公开(公告)号：US20090283771A1

公开(公告)日：2009-11-19

申请号：US12384299

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/786

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导体层包括至少两个层叠的碳纳米管膜，并且每个碳纳米管膜包括主要沿相同方向定向的多个碳纳米管，并且至少两个相邻的碳纳米管膜中的碳纳米管沿着不同的方向排列。