公开(公告)号：US08008140B2

公开(公告)日：2011-08-30

申请号：US11256086

申请日：2005-10-24

申请人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.

摘要翻译： 本发明的目的是在具有少量加工步骤的工艺中制造具有小尺寸LDD区域的TFT，并且制造各自具有依赖于每个电路的结构的TFT。 根据本发明，栅电极是多层的，并且通过使下层栅电极的栅极长度比上层栅电极的栅极长度长，形成帽形栅电极。 此时，仅通过使用抗蚀剂凹部宽度来蚀刻上层栅电极，形成帽状栅电极。 因此，也可以在精细TFT中形成LDD区域; 因此，可以分别制造具有取决于每个电路的结构的TFT。

公开(公告)号：US07951964B2

公开(公告)日：2011-05-31

申请号：US12988670

申请日：2009-04-21

申请人： Satoru Saito

发明人： Satoru Saito

IPC分类号： C07D307/04

CPC分类号： C07F5/025

摘要： A fluorine-containing boronic acid ester compound (R1: a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atom, m: 1 to 5, and n: 3 to 7) having a low melting point is produced by reacting a 3,5-dihalogeno fluorine-containing phenol derivative with a dialkoxyborane The fluorine-containing boronic acid ester compound is highly soluble in organic solvents and has a low melting point. The fluorine-containing boronic acid ester compound can suitably be used as a starting material for the production of conjugated polymer materials or as a curing agent for elastomeric polymer materials.

摘要翻译： 具有低熔点的含氟硼酸酯化合物（R1：具有2-10个碳原子的直链或支链的二价脂族烃基，m：1〜5，和n：3〜7）是通过使3 含二烷氧基硼烷的5-二卤代氟代苯酚衍生物含氟硼酸酯化合物在有机溶剂中高度溶解，熔点低。 含氟硼酸酯化合物可以适当地用作生产共轭聚合物材料或作为弹性体聚合物材料的固化剂的起始材料。

公开(公告)号：US20110040118A1

公开(公告)日：2011-02-17

申请号：US12988670

申请日：2009-04-21

申请人： Satoru Saito

发明人： Satoru Saito

IPC分类号： C07F5/04

CPC分类号： C07F5/025

摘要： A fluorine-containing boronic acid ester compound (R1: a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atom, m: 1 to 5, and n: 3 to 7) having a low melting point is produced by reacting a 3,5-dihalogeno fluorine-containing phenol derivative with a dialkoxyborane The fluorine-containing boronic acid ester compound is highly soluble in organic solvents and has a low melting point. The fluorine-containing boronic acid ester compound can suitably be used as a starting material for the production of conjugated polymer materials or as a curing agent for elastomeric polymer materials.

摘要翻译： 具有低熔点的含氟硼酸酯化合物（R1：具有2-10个碳原子的直链或支链的二价脂族烃基，m：1〜5，和n：3〜7）是通过使3 含二烷氧基硼烷的5-二卤代氟代苯酚衍生物含氟硼酸酯化合物在有机溶剂中高度溶解，熔点低。 含氟硼酸酯化合物可以适当地用作生产共轭聚合物材料或作为弹性体聚合物材料的固化剂的起始材料。

公开(公告)号：US20090285703A1

公开(公告)日：2009-11-19

申请号：US12307122

申请日：2007-06-26

申请人： Masahiko Osaka ,  Masanori Taguchi ,  Satoru Saito ,  Eiichi Oshio ,  Kazuhiko Kameyama ,  Kou Tsukamoto

发明人： Masahiko Osaka ,  Masanori Taguchi ,  Satoru Saito ,  Eiichi Oshio ,  Kazuhiko Kameyama ,  Kou Tsukamoto

IPC分类号： F04B35/04

CPC分类号： H01R13/521 ,  F04C18/0215 ,  F04C23/008 ,  F04C2240/803 ,  H02G3/22 ,  H02K5/10 ,  H02K5/225 ,  H02K7/14

摘要： An energization bolt (102), which includes an input portion (102a) to be connected to a motor (40), an intermediate portion (102b) contiguous to the input portion and positioned in an insertion hole (23d) formed in a housing (20), and an output portion (102c) contiguous to the intermediate portion and to be connected to a drive circuit (98), and energizes between the drive circuit and the motor, and a seal member (100), which surrounds the intermediate portion, is sandwiched and supported by the input portion side and the output portion side, and is fastened to the housing, are included.

摘要翻译： 一个通电螺栓（102），包括一个与马达（40）连接的输入部分（102a），一个与输入部分邻接的中间部分（102b），并定位在一个形成在壳体中的插入孔（23d）中 20）和与中间部分邻接并连接到驱动电路（98）的输出部分（102c），并且在驱动电路和电动机之间通电;以及密封构件（100），其围绕中间部分 被输入部分侧和输出部分侧夹持和支撑，并被固定到壳体。

公开(公告)号：US20080179599A1

公开(公告)日：2008-07-31

申请号：US11876429

申请日：2007-10-22

申请人： Tetsuji YAMAGUCHI ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji YAMAGUCHI ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L27/14

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with beat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供给贱金属膜的节拍，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US07312289B2

公开(公告)日：2007-12-25

申请号：US10674009

申请日：2003-09-29

申请人： Satoru Saito ,  Jun Kanega ,  Satoshi Horie ,  Masashi Kudo

发明人： Satoru Saito ,  Jun Kanega ,  Satoshi Horie ,  Masashi Kudo

IPC分类号： C08C16/24

CPC分类号： C08F214/22

摘要： A fluorine-containing elastomer having a copolymer composition, which comprises 50-85% by mole of (a) vinylidene fluoride, 0-25% by mole of (b) tetrafluoroethylene, 7-20% by mole of (c) perfluoro(methyl vinyl ether), 3-15% by mole of (d) CF2═CFO[CF2CF(CF3)O]nCF3 and 0.1-2% by mole of (e) RfX, where Rf is an unsaturated fluorohydrocarbon group having 2-8 carbon atoms and X is a bromine or iodine atom, can give curing products with distinguished low-temperature characteristics and solvent resistance without deteriorating the distinguished moldability and compression set characteristics proper to the fluorine-containing elastomer, and a fluorine-containing elastomer composition, which comprises 100 parts by weight of the present fluorine-containing elastomer, 0.1-10 parts by weight of an organic peroxide, 0.1-10 parts by weight of a polyfunctional unsaturated compound and not less than 2 parts by weight of an acid acceptor can give curing products with distinguished low-temperature characteristics and fuel oil resistance.

摘要翻译： 具有共聚物组成的含氟弹性体，其包含50-85摩尔％的（a）偏二氟乙烯，0-25摩尔％的（b）四氟乙烯，7-20摩尔％的（c）全氟（甲基 乙烯基醚），3-15摩尔％的（d）CF 2 -CFO [CF 2 CF 3（CF 3 N）O] n CF （e）RfX，其中Rf是具有2-8个碳原子的不饱和氟代烃基，X是溴或碘原子，可以产生具有显着低的固化产物 温度特性和耐溶剂性，而不会降低对含氟弹性体适合的显着的成型性和压缩变定特性，以及含氟弹性体组合物，其包含100重量份本发明的含氟弹性体，0.1-10重量份 有机过氧化物的重量，0.1-10重量份的多官能不饱和化合物和不少于2重量份的酸受体，可以得到固化产物 具有卓越的低温特性和耐燃油性。

公开(公告)号：US07288480B2

公开(公告)日：2007-10-30

申请号：US11110918

申请日：2005-04-21

申请人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L21/44

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with heat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供应贱金属膜的热量，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US20060091398A1

公开(公告)日：2006-05-04

申请号：US11256086

申请日：2005-10-24

申请人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L29/76 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.

摘要翻译： 本发明的目的是在具有少量加工步骤的工艺中制造具有小尺寸LDD区域的TFT，并且制造各自具有依赖于每个电路的结构的TFT。 根据本发明，栅电极是多层的，并且通过使下层栅电极的栅极长度比上层栅电极的栅极长度长，形成帽形栅电极。 此时，仅通过使用抗蚀剂凹部宽度来蚀刻上层栅电极，形成帽状栅电极。 因此，也可以在精细TFT中形成LDD区域; 因此，可以分别制造具有取决于每个电路的结构的TFT。

公开(公告)号：US20050048744A1

公开(公告)日：2005-03-03

申请号：US10919513

申请日：2004-08-17

申请人： Atsuo Isobe ,  Satoru Saito ,  Saishi Fujikawa

发明人： Atsuo Isobe ,  Satoru Saito ,  Saishi Fujikawa

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2022 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S438/978

摘要： Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is required to be shorter. However, since a glass substrate has large deflection, a gate electrode cannot have been etched to have a gate length short enough to be used for a CPU. According to the invention, a conductive film is formed over a crystalline semiconductor film formed over a glass substrate, a mask is formed over the conductive film, and the conductive film is etched by using the mask; thus, a thin film transistor with a gate length of 1.0 μm or less is formed. In particular, the crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film formed over a glass substrate by laser irradiation.

摘要翻译： 由于玻璃中含有的钠或玻璃本身具有低耐热性; 没有获得使用在玻璃基板等上形成的TFT制造的CPU。 在高速运行CPU的情况下，TFT的栅极长度（栅极长度）要求较短。 然而，由于玻璃基板具有大的偏转，所以栅极电极不能被蚀刻以具有足够短的栅极长度以用于CPU。 根据本发明，在形成在玻璃基板上的结晶半导体膜上形成导电膜，在导电膜上形成掩模，并使用掩模蚀刻导电膜; 因此，形成栅极长度为1.0μm以下的薄膜晶体管。 特别地，通过激光照射使在玻璃基板上形成的非晶半导体膜结晶化而形成结晶半导体膜。

公开(公告)号：US06602961B1

公开(公告)日：2003-08-05

申请号：US08500714

申请日：1995-07-11

申请人： Satoru Saito ,  Haruyoshi Tatsu ,  Hiroaki Murata

发明人： Satoru Saito ,  Haruyoshi Tatsu ,  Hiroaki Murata

IPC分类号： C08F11418

CPC分类号： C08K5/18 ,  C08L27/12

摘要： A fluorine-containing elastomer composition comprising a terpolymer of tetrafluoroethylene, perfluoro(lower alkyl vinyl ether) and perfluoro(&ohgr;-cyanoalkyl vinyl ether) and a bisaminophenyl compound represented by the following general formula as a curing agent: wherein A is an alkylidene group having 1 to 6 carbon atoms, a perfluoroalkylidene group having 1 to 10 carbon atoms, a SO2 group, an O group, a CO group, or a carbon-carbon bond capable of directly coupling two benzene rings; and X and Y each are a hydroxyl group or an amino group can give a rubbery vulcanization product with a good processability and good physical properties by a commercially available cross-linking agent free from any safety problem.

摘要翻译： 包含四氟乙烯，全氟（低级烷基乙烯基醚）和全氟（ω-氰基烷基乙烯基醚）的三元共聚物和由以下通式表示的二氨基苯基化合物作为固化剂的含氟弹性体组合物：其中A是具有 1至6个碳原子，具有1至10个碳原子的全氟亚烷基，可以直接键合两个苯环的SO 2基团，O基团，CO基团或碳 - 碳键; X和Y各自为羟基或氨基可以通过市售的无任何安全问题的交联剂得到具有良好加工性和良好物理性能的橡胶状硫化产品。