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    Method for manufacturing semiconductor device including hat-shaped electrode
    1.
    发明授权
    Method for manufacturing semiconductor device including hat-shaped electrode 有权
    包括帽形栅电极的半导体器件的制造方法

    公开(公告)号：US08008140B2

    公开(公告)日：2011-08-30

    申请号：US11256086

    申请日：2005-10-24

    申请人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

    发明人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

    摘要： It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.

    摘要翻译： 本发明的目的是在具有少量加工步骤的工艺中制造具有小尺寸LDD区域的TFT，并且制造各自具有依赖于每个电路的结构的TFT。 根据本发明，栅电极是多层的，并且通过使下层栅电极的栅极长度比上层栅电极的栅极长度长，形成帽形栅电极。 此时，仅通过使用抗蚀剂凹部宽度来蚀刻上层栅电极，形成帽状栅电极。 因此，也可以在精细TFT中形成LDD区域; 因此，可以分别制造具有取决于每个电路的结构的TFT。

    Semiconductor device and method for manufacturing the same
    2.
    发明申请
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20060091398A1

    公开(公告)日：2006-05-04

    申请号：US11256086

    申请日：2005-10-24

    申请人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

    发明人： Mayumi Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

    IPC分类号： H01L29/76 ,  H01L29/04

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

    摘要： It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.

    摘要翻译： 本发明的目的是在具有少量加工步骤的工艺中制造具有小尺寸LDD区域的TFT，并且制造各自具有依赖于每个电路的结构的TFT。 根据本发明，栅电极是多层的，并且通过使下层栅电极的栅极长度比上层栅电极的栅极长度长，形成帽形栅电极。 此时，仅通过使用抗蚀剂凹部宽度来蚀刻上层栅电极，形成帽状栅电极。 因此，也可以在精细TFT中形成LDD区域; 因此，可以分别制造具有取决于每个电路的结构的TFT。

    Semiconductor device and manufacturing method of the same
    3.
    发明申请
    Semiconductor device and manufacturing method of the same 审中-公开
    半导体器件及其制造方法相同

    公开(公告)号：US20060197088A1

    公开(公告)日：2006-09-07

    申请号：US11367509

    申请日：2006-03-06

    申请人： Atsuo Isobe ,  Hajime Tokunaga ,  Mayumi Yamaguchi

    发明人： Atsuo Isobe ,  Hajime Tokunaga ,  Mayumi Yamaguchi

    IPC分类号： H01L29/04

    CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

    摘要： It is an object of the present invention to manufacture a minute TFT having an LDD region through process with the reduced manufacturing steps, and form a TFT having a structure suitable for each circuit. It is also an object of the present invention to secure an ON current even in a TFT having an LDD region. A hat-shaped gate electrode is formed by forming a two-layer gate electrode in which the gate length of a lower layer of the gate electrode is longer than that of an upper layer of the gate electrode. The hat-shaped gate electrode is formed by etching only the upper layer of the gate electrode by making the use of the resist recess width. In addition, silicide is formed in a contact portion of a wiring and a semiconductor film to lower contact resistance.

    摘要翻译： 本发明的目的是通过制造步骤减少的方法制造具有LDD区域的微小TFT，并且形成具有适合于每个电路的结构的TFT。 本发明的另一个目的是即使在具有LDD区域的TFT中也能确保导通电流。 通过形成栅极电极的下层的栅极长度比栅电极的上层的栅极长度长的双层栅电极形成帽状的栅电极。 通过使用抗蚀剂凹部宽度仅蚀刻栅电极的上层来形成帽形栅电极。 此外，在布线和半导体膜的接触部分中形成硅化物以降低接触电阻。

    MINUTE STRUCTURE, MICROMACHINE, ORGANIC TRANSISTOR, ELECTRIC APPLIANCE, AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    MINUTE STRUCTURE, MICROMACHINE, ORGANIC TRANSISTOR, ELECTRIC APPLIANCE, AND MANUFACTURING METHOD THEREOF 有权
    分钟结构，微型金枪鱼，有机晶体管，电器及其制造方法

    公开(公告)号：US20120037966A1

    公开(公告)日：2012-02-16

    申请号：US13283648

    申请日：2011-10-28

    申请人： Mayumi Yamaguchi ,  Konami Izumi

    发明人： Mayumi Yamaguchi ,  Konami Izumi

    IPC分类号： H01L29/78 ,  H01L21/302

    CPC分类号： H01L51/0021 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266

    摘要： A micromachine is generally formed using a semiconductor substrate such as a silicon wafer. One of the objects of the present invention is to realize further reduction in cost by integrating a minute structure and a semiconductor element controlling the minute structure over one insulating surface in one step. A minute structure has a structure in which a first layer formed into a frame-shape are provided over an insulating surface, a space is formed inside the frame, and a second layer is formed to cross over the first layer. Such a minute structure and a thin film transistor can be integrated over one insulating surface in one step.

    摘要翻译： 微机械通常使用诸如硅晶片的半导体衬底形成。 本发明的目的之一是通过在一个步骤中将微结构和控制微结构的半导体元件集成在一个绝缘表面上来实现成本的进一步降低。 微小结构具有这样的结构，其中形成为框架形状的第一层设置在绝缘表面上，在框架内部形成空间，并且形成第二层以跨越第一层。 这样的微小结构和薄膜晶体管可以在一个步骤中集成在一个绝缘表面上。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07560789B2

    公开(公告)日：2009-07-14

    申请号：US11420150

    申请日：2006-05-24

    申请人： Konami Izumi ,  Mayumi Yamaguchi

    发明人： Konami Izumi ,  Mayumi Yamaguchi

    IPC分类号： H01L29/82

    CPC分类号： B81C1/00246 ,  B81C2203/0735 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1266 ,  H01L27/1277

    摘要： A microstructure and a semiconductor element which are included in a micromachine have been generally formed in different steps. It is an object to provide a method for manufacturing a micromachine in which a microstructure and a semiconductor element are formed over one insulating substrate. A feature of the invention is a micromachine including a movable layer containing polycrystalline silicon which is thermally crystallized or crystallized by a laser using metal and a space below or above the layer. Such polycrystalline silicon has high strength and is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device in which a microstructure and a semiconductor element are formed over one insulating substrate can be formed.

    摘要翻译： 包括在微加工机中的微结构和半导体元件通常以不同的步骤形成。 本发明的目的是提供一种在一个绝缘基板上形成微结构和半导体元件的微机械的制造方法。 本发明的特征是包括含有多晶硅的可移动层的微机械，其通过使用金属的激光和层的下方或上方的空间热结晶或结晶。 这种多晶硅具有高强度并形成在绝缘表面上，因此用作微结构并用于形成半导体元件。 因此，可以形成其中在一个绝缘基板上形成微结构和半导体元件的半导体器件。

    Manufacturing method of microstructure and microelectromechanical system
    9.
    发明授权
    Manufacturing method of microstructure and microelectromechanical system 有权
    微结构和微机电系统的制造方法

    公开(公告)号：US07537953B2

    公开(公告)日：2009-05-26

    申请号：US11557353

    申请日：2006-11-07

    申请人： Fuminori Tateishi ,  Konami Izumi ,  Mayumi Yamaguchi

    发明人： Fuminori Tateishi ,  Konami Izumi ,  Mayumi Yamaguchi

    IPC分类号： G01R31/26

    CPC分类号： B81C1/00476

    摘要： To reduce the number of photomasks which are used to form sacrificial layers for producing spaces of a microstructure, thereby reducing the manufacturing cost. Sacrificial layers are formed by using resist masks which are patterned with the same photomask. Specifically, after forming a first sacrificial layer by etching using a resist mask, a second sacrificial layer is formed by etching using a resist mask which is pattered with same photomask as the resist mask of the first sacrificial layer. By deforming one of the resist masks before etching its corresponding sacrificial layer, for example by increasing or reducing the external dimension of the resist mask, sacrificial layers having different sizes from each other can be formed.

    摘要翻译： 为了减少用于形成用于形成微结构的空间的牺牲层的光掩模的数量，从而降低制造成本。 牺牲层通过使用用相同光掩模图案化的抗蚀剂掩模形成。 具体而言，在使用抗蚀剂掩模蚀刻形成第一牺牲层之后，通过使用与第一牺牲层的抗蚀剂掩模相同的光掩模图案化的抗蚀剂掩模进行蚀刻来形成第二牺牲层。 在蚀刻其相应的牺牲层之前，通过使抗蚀剂掩模之一变形，例如通过增加或减小抗蚀剂掩模的外部尺寸，可以形成具有彼此不同尺寸的牺牲层。

    Electronic pen and electronic pen system
    10.
    发明申请
    Electronic pen and electronic pen system 审中-公开
    电子笔和电子笔系统

    公开(公告)号：US20080055279A1

    公开(公告)日：2008-03-06

    申请号：US11892591

    申请日：2007-08-24

    申请人： Takeshi Osada ,  Mayumi Yamaguchi ,  Konami Izumi

    发明人： Takeshi Osada ,  Mayumi Yamaguchi ,  Konami Izumi

    IPC分类号： G06F3/033

    CPC分类号： G06F3/03545 ,  G06F3/033 ,  G06F3/03542 ,  G06F3/044 ,  G06F3/04883 ,  G06K9/00402 ,  G06K9/22 ,  G06K9/222 ,  H02J7/025

    摘要： To provide a small and light-weight writing instrument that can accurately read information written down on a display portion as electronic information. A pen-shaped device which includes a battery capable of being charged wirelessly from the outside, a first sensor which detects whether a pen nib has contact with a surface, a second sensor which detects movement of the pen nib in contact with the surface, a control circuit which is electrically connected to the first sensor and the second sensor, and a memory which is electrically connected to the control circuit, where the first sensor, the second sensor, the control circuit, and the memory operate by supply of electric power from the battery.

    摘要翻译： 提供一种小型轻便的书写工具，可以准确地读取在显示部分上写入的信息作为电子信息。 一种笔状装置，包括能够从外部无线充电的电池，检测笔尖是否与表面接触的第一传感器，检测笔尖与表面接触的移动的第二传感器， 电连接到第一传感器和第二传感器的控制电路，以及电连接到控制电路的存储器，其中第一传感器，第二传感器，控制电路和存储器通过从 电池。