Stacked inverter delay chain
    71.
    发明授权
    Stacked inverter delay chain 有权
    堆叠变频器延时链

    公开(公告)号:US07336103B1

    公开(公告)日:2008-02-26

    申请号:US10864271

    申请日:2004-06-08

    IPC分类号: H03K19/094

    摘要: Stacked inverter delay chains. In accordance with a first embodiment of the present invention, a series stack of two p-type devices is coupled to a series stack of three n-type devices, forming a stacked inverter comprising desirable delay, die area and power characteristics. Two stacked inverters are coupled together to form a stacked inverter delay chain that is more efficient in terms of die area, active and passive power consumption than conventional delay chains comprising conventional inverters.

    摘要翻译: 堆叠式逆变器延时链。 根据本发明的第一实施例,两个p型器件的串联堆叠耦合到三个n型器件的串联堆叠,形成堆叠的反相器,其包括期望的延迟,管芯面积和功率特性。 两个堆叠的反相器耦合在一起以形成堆叠的反相器延迟链,其在与常规逆变器的常规延迟链相比在管芯面积,主动和无源功耗方面更有效。

    Device including a resistive path to introduce an equivalent RC circuit
    76.
    发明授权
    Device including a resistive path to introduce an equivalent RC circuit 有权
    装置包括引入等效RC电路的电阻路径

    公开(公告)号:US06965151B2

    公开(公告)日:2005-11-15

    申请号:US10393533

    申请日:2003-03-20

    申请人: James B. Burr

    发明人: James B. Burr

    摘要: Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between switching events.

    摘要翻译: 用于提供设备的结构,其包括专门设计成在装置的散装材料和井套接触之间提供预定电阻的电阻路径。 通过提供电阻路径,将等效的RC电路引入器件,其允许体材料电势跟踪栅极电位,从而有利地降低器件导通时的阈值电压,并在器件关断时提高阈值电压。 此外,引入电阻路径还允许大量材料电位被控制并且在切换事件之间处于平衡电位下稳定。

    Device including a resistive path to introduce an equivalent RC circuit

    公开(公告)号:US06800924B2

    公开(公告)日:2004-10-05

    申请号:US10393537

    申请日:2003-03-20

    申请人: James B. Burr

    发明人: James B. Burr

    IPC分类号: H01L2900

    摘要: Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between switching events.

    Device including a resistive path to introduce an equivalent RC circuit
    78.
    发明授权
    Device including a resistive path to introduce an equivalent RC circuit 有权
    装置包括引入等效RC电路的电阻路径

    公开(公告)号:US06777779B2

    公开(公告)日:2004-08-17

    申请号:US10393535

    申请日:2003-03-20

    申请人: James B. Burr

    发明人: James B. Burr

    IPC分类号: H01L2900

    摘要: Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between switching events.

    摘要翻译: 用于提供设备的结构,其包括专门设计成在装置的散装材料和井套接触之间提供预定电阻的电阻路径。 通过提供电阻路径,将等效的RC电路引入器件,其允许体材料电势跟踪栅极电位,从而有利地降低器件导通时的阈值电压,并在器件关断时提高阈值电压。 此外,引入电阻路径还允许大量材料电位被控制并且在切换事件之间处于平衡电位下稳定。

    Back-biased MOS device
    79.
    发明授权
    Back-biased MOS device 有权
    背偏MOS器件

    公开(公告)号:US06664608B1

    公开(公告)日:2003-12-16

    申请号:US09996705

    申请日:2001-11-30

    申请人: James B. Burr

    发明人: James B. Burr

    IPC分类号: H01L2900

    摘要: A plurality of p-wells and n-wells are formed in a front side of a bulk material, and a plurality of n layers and p layers are alternately formed within the bulk material between a back side of the bulk material and the plurality of n-wells and p-wells. The plurality of n layers are electrically isolated from one another and respectively route different potentials to selected ones of the plurality of n-wells, and likewise, the plurality of p layers are electrically isolated from one another and respectively route different potentials to selected ones of the plurality of p-wells.

    摘要翻译: 在本体材料的前侧形成有多个p阱和n阱,并且在散装材料的背面和多个n层之间交替地形成多个n层和p层, 井和井。 多个n层彼此电隔离并且将不同的电位分别路由到多个n阱中的选定的n阱,并且同样地,多个p层彼此电隔离并且分别将不同的电位路由到 多个对孔。

    Device including a resistive path to introduce an equivalent RC circuit

    公开(公告)号:US06586817B1

    公开(公告)日:2003-07-01

    申请号:US09860253

    申请日:2001-05-18

    申请人: James B. Burr

    发明人: James B. Burr

    IPC分类号: H01L2900

    摘要: Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between switching events.