Threshold acquisition and adaption in NAND flash memory
    75.
    发明授权
    Threshold acquisition and adaption in NAND flash memory 有权
    NAND闪存中的阈值采集和适配

    公开(公告)号:US08942037B2

    公开(公告)日:2015-01-27

    申请号:US13664583

    申请日:2012-10-31

    CPC classification number: G11C16/06 G11C16/34 G11C16/349

    Abstract: A method, apparatus, and controller for acquiring and tracking at least one threshold voltage of at least one cell of at least one flash chip. The method can include acquiring the at least one threshold voltage of a particular cell of the at least one flash cell. The method can further include performing at least one threshold voltage adjustment iteration.

    Abstract translation: 一种用于获取和跟踪至少一个闪存芯片的至少一个单元的至少一个阈值电压的方法,装置和控制器。 该方法可以包括获取至少一个闪存单元的特定单元的至少一个阈值电压。 该方法还可以包括执行至少一个阈值电压调整迭代。

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