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82 条记录 (耗时 0.051 秒)

    Negative photoresist and method of using thereof
    71.
    发明授权
    Negative photoresist and method of using thereof 失效
    负光致抗蚀剂及其使用方法

    公开(公告)号：US07011923B2

    公开(公告)日：2006-03-14

    申请号：US10820117

    申请日：2004-04-07

    申请人： Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

    CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122

    摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The negative photoresist composition comprises a radiation sensitive acid generator, a first polymer containing an alkoxymethyl amido group and a hydroxy-containing second polymer. The first and second polymers may also have a repeating unit having an aqueous base soluble moiety. The first and second polymers undergo acid catalyzed crosslinking upon exposure of the acid to radiation, producing a product that is insoluble in an aqueous alkaline developer solution.

    摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 负性光致抗蚀剂组合物包含辐射敏感性酸产生剂，含有烷氧基甲基酰氨基的第一聚合物和含羟基的第二聚合物。 第一和第二聚合物也可以具有含有碱水溶性部分的重复单元。 第一和第二聚合物在将酸暴露于辐射时经历酸催化交联，产生不溶于碱性显影剂水溶液的产物。

    Underlayer compositions containing heterocyclic aromatic structures
    73.
    发明授权
    Underlayer compositions containing heterocyclic aromatic structures 失效

    公开(公告)号：US07807332B2

    公开(公告)日：2010-10-05

    申请号：US12105685

    申请日：2008-04-18

    申请人： Wu-Song S. Huang ,  Karen Temple ,  Pushkara R. Varanasi

    发明人： Wu-Song S. Huang ,  Karen Temple ,  Pushkara R. Varanasi

    IPC分类号： G03C1/76 ,  G03F7/11

    CPC分类号： G03F7/094 ,  G06F17/5072

    摘要： A composition suitable for use as a planarizing underlayer in a multilayer lithographic process is disclosed. The inventive composition comprises a polymer containing heterocyclic aromatic moieties. In another aspect, the composition further comprises an acid generator. In yet another aspect, the composition further comprises a crosslinker. The inventive compositions provide planarizing underlayers having outstanding optical, mechanical and etch selectivity properties. The present invention also encompasses lithographic structures containing the underlayers prepared from the compositions of the present invention, methods of making such lithographic structures, and methods of using such lithographic structures to pattern underlying material layers on a substrate.

    ULTRA LOW POST EXPOSURE BAKE PHOTORESIST MATERIALS
    74.
    发明申请
    ULTRA LOW POST EXPOSURE BAKE PHOTORESIST MATERIALS 有权
    超低曝光烘烤光电材料

    公开(公告)号：US20100216071A1

    公开(公告)日：2010-08-26

    申请号：US12390764

    申请日：2009-02-23

    申请人： Dario Leonardo Goldfarb ,  Mahmoud Khojasteh ,  Pushkara R. Varanasi

    发明人： Dario Leonardo Goldfarb ,  Mahmoud Khojasteh ,  Pushkara R. Varanasi

    IPC分类号： G03F7/004 ,  C08F18/20 ,  G03F7/20

    CPC分类号： G03F7/0392 ,  C08F220/22 ,  C08F220/28 ,  Y10S430/114 ,  Y10S430/146

    摘要： Polymers comprising a first methacrylate monomer having a pendent spacer between the polymer backbone and an acid-liable acetal group, a second methacrylate monomer having a pendent group including a fluorinated alkyl group and a third methacrylate monomer having a pendent hydrocarbon group. Photoresist formulations include the polymers, a photoacid generator and a casting solvent. Methods of patterning photoresist films formed from the photoresist formulations are characterized by post-exposure bakes at temperatures of about 60° C. or less.

    摘要翻译： 聚合物包含在聚合物主链和耐酸缩醛基之间具有悬挂间隔物的第一甲基丙烯酸酯单体，具有含氟烷基的侧基的第二甲基丙烯酸酯单体和具有侧链烃基的第三甲基丙烯酸酯单体。 光致抗蚀剂配方包括聚合物，光致酸发生剂和浇铸溶剂。 由光致抗蚀剂制剂形成的光致抗蚀剂膜的图案的方法的特征在于在约60℃或更低的温度下曝光后烘烤。

    Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application
    77.
    发明授权
    Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application 失效
    用于干燥193nm顶部抗反射涂层的马来酸酐聚合物的氟化半酯

    公开(公告)号：US07435537B2

    公开(公告)日：2008-10-14

    申请号：US11425529

    申请日：2006-06-21

    申请人： Wu-Song S. Huang ,  Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wu-Song S. Huang ,  Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03F7/40

    CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  Y10S438/952

    摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

    摘要翻译： 本发明公开了一种适合用作193nm光刻的顶部抗反射涂层和阻挡层的组合物。 本发明的组合物可溶于碱性水溶液中，并且在193nm具有低折射率。 本发明的组合物包含具有主链和氟化半酯部分的水溶性基团可溶性聚合物。 氟化半酯部分是从骨架侧挂。 本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

    Negative photoresist and method of using thereof
    78.
    发明授权
    Negative photoresist and method of using thereof 失效
    负光致抗蚀剂及其使用方法

    公开(公告)号：US07081326B2

    公开(公告)日：2006-07-25

    申请号：US10798157

    申请日：2004-03-11

    申请人： Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

    CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/123

    摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a multihydroxy-containing additive; and a resist polymer comprising a first repeating unit from a first monomer. The resist polymer may also comprise a second repeating unit from a second monomer, wherein the second monomer has an aqueous base soluble moiety. The multihydroxy-containing additive has the structure Q-(OH)m, where Q may include at least one alicycic group and m may be any integer between 2 and 6. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a product that is insoluble in a developer solution.

    摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 多羟基添加剂; 以及包含来自第一单体的第一重复单元的抗蚀剂聚合物。 抗蚀剂聚合物还可以包含来自第二单体的第二重复单元，其中第二单体具有碱性水溶性部分。 多羟基添加剂具有结构Q-（OH）m，其中Q可以包括至少一个脂环族基团，m可以是2和6之间的任何整数。酸产生剂适于产生 暴露于辐射时酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于显影剂溶液的产物。

    Negative photoresist composition involving non-crosslinking chemistry
    79.
    发明授权
    Negative photoresist composition involving non-crosslinking chemistry 有权
    负光致抗蚀剂组合物涉及非交联化学

    公开(公告)号：US06991890B2

    公开(公告)日：2006-01-31

    申请号：US10773930

    申请日：2004-02-06

    申请人： Wenjie Li ,  Pushkara R. Varanasi ,  Alyssandrea H. Hamad

    发明人： Wenjie Li ,  Pushkara R. Varanasi ,  Alyssandrea H. Hamad

    IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03C1/73

    CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

    摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; an additive; and a resist polymer derived from at least one first monomer including a hydroxy group. The first monomer may be acidic or approximately pH neutral. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The additive may include one or more alicyclic structures. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.

    摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 添加剂 和衍生自至少一种包含羟基的第一单体的抗蚀剂聚合物。 第一单体可以是酸性的或大致pH中性的。 抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。 添加剂可以包括一种或多种脂环族结构。 酸产生器适于在暴露于辐射时产生酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。

    Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching
    80.
    发明授权
    Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效
    具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物

    公开(公告)号：US06265134B1

    公开(公告)日：2001-07-24

    申请号：US09699764

    申请日：2000-10-30

    申请人： Pushkara R. Varanasi ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Ranee W. Kwong

    发明人： Pushkara R. Varanasi ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Ranee W. Kwong

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/038 ,  Y10S430/106 ,  Y10S430/128

    摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc. The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.

    摘要翻译： 通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。 光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。 聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在所产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制成导电，半导体或 绝缘结构通过光刻。