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    Negative photoresist composition involving non-crosslinking chemistry
    1.
    发明授权
    Negative photoresist composition involving non-crosslinking chemistry 有权
    负光致抗蚀剂组合物涉及非交联化学

    公开(公告)号：US06991890B2

    公开(公告)日：2006-01-31

    申请号：US10773930

    申请日：2004-02-06

    申请人： Wenjie Li ,  Pushkara R. Varanasi ,  Alyssandrea H. Hamad

    发明人： Wenjie Li ,  Pushkara R. Varanasi ,  Alyssandrea H. Hamad

    IPC分类号： G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36 ,  G03C1/73

    CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

    摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; an additive; and a resist polymer derived from at least one first monomer including a hydroxy group. The first monomer may be acidic or approximately pH neutral. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The additive may include one or more alicyclic structures. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.

    摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 添加剂 和衍生自至少一种包含羟基的第一单体的抗蚀剂聚合物。 第一单体可以是酸性的或大致pH中性的。 抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。 添加剂可以包括一种或多种脂环族结构。 酸产生器适于在暴露于辐射时产生酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。

    FLUORINATED HALF ESTER OF MALEIC ANHYDRIDE POLYMERS FOR DRY 193 NM TOP ANTIREFLECTIVE COATING APPLICATION
    2.
    发明申请
    FLUORINATED HALF ESTER OF MALEIC ANHYDRIDE POLYMERS FOR DRY 193 NM TOP ANTIREFLECTIVE COATING APPLICATION 失效
    用于干燥193 NM顶级抗反射涂层应用的马来酸酐聚合物的氟化半酯

    公开(公告)号：US20080026315A1

    公开(公告)日：2008-01-31

    申请号：US11425529

    申请日：2006-06-21

    申请人： Wu-Song S. Huang ,  Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wu-Song S. Huang ,  Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03C1/00

    CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  Y10S438/952

    摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

    摘要翻译： 本发明公开了适合用作193nm光刻的顶部抗反射涂层和阻挡层的组合物。 本发明的组合物可溶于碱性水溶液中，并且在193nm具有低折射率。 本发明的组合物包含具有主链和氟化半酯部分的水溶性基团可溶性聚合物。 氟化半酯部分是从骨架侧挂。 本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

    Negative photoresist composition including non-crosslinking chemistry
    3.
    发明授权
    Negative photoresist composition including non-crosslinking chemistry 有权
    负光致抗蚀剂组合物包括非交联化学

    公开(公告)号：US07235342B2

    公开(公告)日：2007-06-26

    申请号：US10766058

    申请日：2004-01-28

    申请人： Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03F7/038 ,  G03F7/30

    CPC分类号： G03F7/0382 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/128

    摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a hydroxy-containing additive; and a resist polymer derived from at least one first monomer. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The hydroxy-containing additive has the structure of Q—OH, where Q may include one or more cyclic structures. Q—OH may have a primary alcohol structure. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.

    摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 含羟基的添加剂; 和衍生自至少一种第一单体的抗蚀剂聚合物。 抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。 含羟基的添加剂具有Q-OH的结构，其中Q可以包括一个或多个环状结构。 Q-OH可以具有伯醇结构。 酸产生器适于在暴露于辐射时产生酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。

    AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME
    6.
    发明申请
    AROMATIC FLUORINE-FREE PHOTOACID GENERATORS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME 审中-公开
    芳香无氟光纤发生器和含有它的光电组合物

    公开(公告)号：US20090181319A1

    公开(公告)日：2009-07-16

    申请号：US12015041

    申请日：2008-01-16

    申请人： Wenjie Li ,  Sen Liu ,  Wu-Song Huang ,  Pushkara R. Varanasi ,  Irene Popova

    发明人： Wenjie Li ,  Sen Liu ,  Wu-Song Huang ,  Pushkara R. Varanasi ,  Irene Popova

    IPC分类号： G03F7/004 ,  G03F7/26 ,  C07C317/14

    CPC分类号： C07C309/59 ,  C07C25/18 ,  C07C309/40 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0397

    摘要： Fluorine-free photoacid generators and photoresist compositions containing fluorine-free photoacid generators are enabled as alternatives to PFOS/PFAS photoacid generator-containing photoresists. The photoacid generators are characterized by the presence of a fluorine-free aromatic sulfonate anionic component having one or more electron withdrawing groups. The photoacid generators preferably contain a fluorine-free onium cationic component, more preferably a sulfonium cationic component. The photoresist compositions preferably contain an acid sensitive imaging polymer having a lactone functionality. The compositions are especially useful for forming material patterns using 193 nm (ArF) imaging radiation.

    摘要翻译： 含有无氟光致酸发生剂的无氟光致酸发生剂和光致抗蚀剂组合物可用作具有PFOS / PFAS光致酸产生剂的光致抗蚀剂的替代品。 光酸产生剂的特征在于存在具有一个或多个吸电子基团的无氟芳族磺酸盐阴离子组分。 光酸产生剂优选含有无氟鎓阳离子成分，更优选含有阳离子锍组分。 光致抗蚀剂组合物优选含有具有内酯官能度的酸敏感成像聚合物。 组合物对于使用193nm（ArF）成像辐射形成材料图案特别有用。

    Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application
    9.
    发明授权
    Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application 失效
    用于干燥193nm顶部抗反射涂层的马来酸酐聚合物的氟化半酯

    公开(公告)号：US07435537B2

    公开(公告)日：2008-10-14

    申请号：US11425529

    申请日：2006-06-21

    申请人： Wu-Song S. Huang ,  Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wu-Song S. Huang ,  Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03F7/40

    CPC分类号： G03F7/091 ,  G03F7/0046 ,  G03F7/0752 ,  Y10S438/952

    摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.

    摘要翻译： 本发明公开了一种适合用作193nm光刻的顶部抗反射涂层和阻挡层的组合物。 本发明的组合物可溶于碱性水溶液中，并且在193nm具有低折射率。 本发明的组合物包含具有主链和氟化半酯部分的水溶性基团可溶性聚合物。 氟化半酯部分是从骨架侧挂。 本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

    Negative photoresist and method of using thereof
    10.
    发明授权
    Negative photoresist and method of using thereof 失效
    负光致抗蚀剂及其使用方法

    公开(公告)号：US07081326B2

    公开(公告)日：2006-07-25

    申请号：US10798157

    申请日：2004-03-11

    申请人： Wenjie Li ,  Pushkara R. Varanasi

    发明人： Wenjie Li ,  Pushkara R. Varanasi

    IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/36

    CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/123

    摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a multihydroxy-containing additive; and a resist polymer comprising a first repeating unit from a first monomer. The resist polymer may also comprise a second repeating unit from a second monomer, wherein the second monomer has an aqueous base soluble moiety. The multihydroxy-containing additive has the structure Q-(OH)m, where Q may include at least one alicycic group and m may be any integer between 2 and 6. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a product that is insoluble in a developer solution.

    摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 多羟基添加剂; 以及包含来自第一单体的第一重复单元的抗蚀剂聚合物。 抗蚀剂聚合物还可以包含来自第二单体的第二重复单元，其中第二单体具有碱性水溶性部分。 多羟基添加剂具有结构Q-（OH）m，其中Q可以包括至少一个脂环族基团，m可以是2和6之间的任何整数。酸产生剂适于产生 暴露于辐射时酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于显影剂溶液的产物。