公开(公告)号：US06566235B2

公开(公告)日：2003-05-20

申请号：US09819680

申请日：2001-03-29

申请人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  H01L21/3083 ,  H01L21/76259 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps. This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly. Also disclosed is a process for producing a solar cell by the above process.

摘要翻译： 一种半导体部件的制造方法，其特征在于，包括：通过在其表面部分形成多孔第一部件而形成多孔层的第一工序，使一部分区域或多个区域形成多孔; 将形成在所述多孔层上的半导体层和未形成多孔的所述第一构件表面接合到第二构件以形成接合结构的第二步骤; 以及在多孔层的一部分分离结合结构的第三步骤。 第一个构件是多孔的，留下一些不是多孔的区域或区域，使得多孔层在第一和第二步骤中在多孔层的部分处不引起任何分离。该方法可以使半导体层与单个层不可分离 在将半导体层转移到支撑构件侧的分离之前的晶体硅构件，而不严格地设定阳极氧化条件。还公开了通过上述方法制造太阳能电池的方法。

公开(公告)号：US06534382B1

公开(公告)日：2003-03-18

申请号：US09634542

申请日：2000-08-08

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida ,  Kenji Yamagata

IPC分类号： H01L2130

CPC分类号： H01L21/76259 ,  B28D5/00 ,  G02F1/136277 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/304 ,  H01L21/76254 ,  H01L22/00 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

摘要翻译： 提供一种半导体制品的制造方法，其包括以下步骤：将膜粘合到具有多孔半导体层的基板上，并通过在剥离方向上对膜施加力而在多孔半导体层处将膜与基板分离。

公开(公告)号：US5403751A

公开(公告)日：1995-04-04

申请号：US262381

申请日：1994-06-20

申请人： Shoji Nishida ,  Kenji Yamagata

发明人： Shoji Nishida ,  Kenji Yamagata

IPC分类号： H01L21/20 ,  H01L31/0224 ,  H01L31/18 ,  H01L21/329

CPC分类号： H01L31/022425 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/915 ,  Y10S148/153

摘要： A process for the production of a solar cell, characterized in that the surface of a silicon wafer is periodically exposed through minute spaced portions of an insulating layer formed on the silicon wafer; crystal growth is performed until monocrystalline silicon regions caused at the spaced portions by way of selective epitaxial growth and lateral crystal growth become collided with each other; the insulating layer is removed through gaps left among the monocrystals; a resin is embedded in the gaps; an electrode layer is formed over the surfaces of the monocrystalline silicon regions; the surface of the electrode layer is fastened to a substrate through a resin; a body comprising the monocrystalline silicon regions is separated from the silicon wafer; and a counter electrode is disposed to the monocrystalline silicon regions.

摘要翻译： 一种用于制造太阳能电池的方法，其特征在于，硅晶片的表面通过在硅晶片上形成的绝缘层的微小间隔部分周期性地暴露; 进行晶体生长，直到通过选择性外延生长和横向晶体生长在间隔部分处引起的单晶硅区域相互碰撞; 通过在单晶中留下的间隙去除绝缘层; 树脂嵌入在间隙中; 在单晶硅区域的表面上形成电极层; 电极层的表面通过树脂固定在基板上; 包括单晶硅区域的主体与硅晶片分离; 并且对电极设置在单晶硅区域。

公开(公告)号：US4456304A

公开(公告)日：1984-06-26

申请号：US382708

申请日：1982-05-27

申请人： Tadao Yoshikawa ,  Shoji Nishida

发明人： Tadao Yoshikawa ,  Shoji Nishida

IPC分类号： B65G33/14 ,  E21D9/08 ,  E21D9/087 ,  E21D9/12

CPC分类号： E21D9/124 ,  E21D9/087 ,  E21D9/12

摘要： An earth removing apparatus for a shield tunneling machine comprising a tubular casing having an excavated earth inlet at one end and a closable outlet for excavated earth at the other end, and a double-shaft screw conveyor rotatably supported by the casing at two portions. The screw conveyor is supported on the casing in the vicinity of its earth inlet by an annular member fitted in an annular recess in the casing, with a bearing provided between the annular member and the casing. Since the forward end of the screw conveyor need not be supported at the center of rotation of the cutter head of the tunneling machine, the apparatus can be designed with greater freedom and is free of objections in its mechanical structure.

摘要翻译： 一种用于盾构隧道掘进机的除土装置，包括一端具有挖土的入口的管状壳体和另一端用于挖土的可关闭出口，以及由两壳体可旋转地支承在壳体上的双轴螺旋输送机。 螺旋输送机通过安装在壳体中的环形凹部中的环形构件支撑在壳体附近的其接地入口附近，其中轴承设置在环形构件和壳体之间。 由于螺旋输送机的前端不需要在隧道机的切割头的旋转中心处被支撑，因此该设备可以被设计成更大的自由度，并且在其机械结构中没有异议。