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100 条记录 (耗时 0.03 秒)

    Semiconductor device and method for fabricating the same
    71.
    发明申请
    Semiconductor device and method for fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20050161766A1

    公开(公告)日：2005-07-28

    申请号：US10872543

    申请日：2004-06-22

    申请人： Motonobu Sato ,  Toyoji Sawada ,  Satoshi Otsuka

    发明人： Motonobu Sato ,  Toyoji Sawada ,  Satoshi Otsuka

    IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/82 ,  H01L23/00 ,  H01L23/31 ,  H01L23/525 ,  H01L27/10

    CPC分类号： H01L27/10 ,  H01L23/3192 ,  H01L23/5258 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device comprises an inter-layer insulating film 18 formed over a substrate 10, a fuse 26 buried in the inter-layer insulating film 18, and a cover film 30 formed over the inter-layer insulating film 18 and having an opening formed therein down to the fuse 26. The inter-layer insulating film 18 is formed in contact with the side wall of the fuse 26 in the opening, whereby the fuse 26 is supported with the inter-layer insulating film 18 to thereby prevent the pattern collapse and pattern scatter. The wide scatter of the fuses can be prevented, and the fuses can be arranged in a small pitch.

    摘要翻译： 半导体器件包括形成在衬底10上的层间绝缘膜18，埋在层间绝缘膜18中的保险丝26和形成在层间绝缘膜18上并具有形成在其中的开口的覆盖膜30 层间绝缘膜18形成为与开口内的保险丝26的侧壁接触，由此保险丝26被层间绝缘膜18支撑，从而防止图案塌陷， 图案分散。 可以防止保险丝的宽散射，并且可以以小间距布置保险丝。

    Semiconductor device manufacture method preventing dishing and erosion during chemical mechanical polishing
    72.
    发明授权
    Semiconductor device manufacture method preventing dishing and erosion during chemical mechanical polishing 有权
    半导体器件制造方法，防止化学机械抛光过程中的凹陷和侵蚀

    公开(公告)号：US06686285B2

    公开(公告)日：2004-02-03

    申请号：US10326378

    申请日：2002-12-23

    申请人： Motoshu Miyajima ,  Toshiyuki Karasawa ,  Tsutomu Hosoda ,  Satoshi Otsuka

    发明人： Motoshu Miyajima ,  Toshiyuki Karasawa ,  Tsutomu Hosoda ,  Satoshi Otsuka

    IPC分类号： H01L21311

    CPC分类号： H01L21/3212 ,  H01L21/31053 ,  H01L21/76808 ,  H01L21/7684

    摘要： A first insulating film is formed on an underlying substrate, the first insulating film being made of a first insulating material. A second insulating film is formed on the first insulating film, the second insulating film being made of a second insulating material different from the first insulating material. A trench is formed through the second and first insulating film, the trench reaching at least an intermediate depth of the first insulating film. A wiring layer made of a conductive material is deposited on the second insulating film, the wiring layer burying the trench. The wiring layer is polished to leave the wiring layer in the trench. The wiring layer and second insulating film are polished until the first insulating film is exposed. Irregularity such as dishing and erosion can be suppressed from being formed.

    摘要翻译： 第一绝缘膜形成在下面的基底上，第一绝缘膜由第一绝缘材料制成。 在第一绝缘膜上形成第二绝缘膜，第二绝缘膜由与第一绝缘材料不同的第二绝缘材料制成。 通过第二和第一绝缘膜形成沟槽，沟槽到达第一绝缘膜的至少中间深度。 在第二绝缘膜上沉积由导电材料制成的布线层，布线层埋入沟槽。 对布线层进行抛光以将沟槽中的布线层留下。 布线层和第二绝缘膜被抛光直到第一绝缘膜露出。 可以抑制凹陷和侵蚀等不规则形成。

    Recording medium and recording or reproduction apparatus that provides protection from unauthorized use of the medium
    73.
    发明授权
    Recording medium and recording or reproduction apparatus that provides protection from unauthorized use of the medium 失效
    记录介质和记录或再现设备，防止未经授权使用介质

    公开(公告)号：US06243796B1

    公开(公告)日：2001-06-05

    申请号：US08904280

    申请日：1997-07-31

    申请人： Satoshi Otsuka

    发明人： Satoshi Otsuka

    IPC分类号： G06F1214

    CPC分类号： G11B19/02 ,  G11B20/00086 ,  G11B27/329 ,  G11B2220/20 ,  G11B2220/211

    摘要： A recording-medium ID information, which is condition information read from the recording medium loaded into a recording and reproduction apparatus, is compared with the ID information unique to the apparatus. When they have the correct relationship, a recording or reproduction operation is permitted for the recording medium. As another condition information, an ID to be input is additionally specified. When the correct ID is input, a recording or reproduction operation to the recording medium is allowed. Thus, a multiple-level protection function is achieved.

    摘要翻译： 将从装载到记录和再现装置中的记录介质读取的条件信息的记录介质ID信息与设备唯一的ID信息进行比较。 当它们具有正确的关系时，允许记录介质的记录或再现操作。 作为另一条件信息，另外指定要输入的ID。 当输入正确的ID时，允许对记录介质的记录或再现操作。 因此，实现了多级保护功能。

    Reduction gear apparatus
    74.
    发明授权
    Reduction gear apparatus 失效
    减速装置

    公开(公告)号：US06102824A

    公开(公告)日：2000-08-15

    申请号：US81861

    申请日：1998-05-21

    申请人： Hiroshi Kosodo ,  Satoshi Otsuka

    发明人： Hiroshi Kosodo ,  Satoshi Otsuka

    IPC分类号： F01B3/00 ,  F16H47/04 ,  F01B1/00

    CPC分类号： F16H47/04 ,  F01B3/00

    摘要： An output shaft is constituted by a plurality of rotary shafts which are disposed on the same axial line so as to be rotatable relative to each other. A cam ring which fixedly encloses one of said rotary shafts has a cam surface with radial projections and recessions on an inner peripheral surface of the cam ring. A cylinder block which is mounted on said one of the rotary shafts has formed therein a plurality of cylinders for containing in each thereof a piston which is radially moved by sliding contact with the cam surface. A sun gear is mounted on said one of the rotary shafts. Planetary gears are mounted on remaining at least one of the rotary shafts so as to be rotatable in gearing mesh with the sun gear and an internal gear which is fixedly mounted around the sun gear.

    摘要翻译： 输出轴由多个旋转轴构成，多个旋转轴相对于彼此旋转设置在同一轴线上。 固定地围绕所述旋转轴之一的凸轮环具有在凸轮环的内周面上具有径向突出和凹陷的凸轮表面。 安装在所述一个旋转轴上的气缸体在其中形成有多个气缸，用于在其中容纳有通过与凸轮表面滑动接触而径向移动的活塞。 太阳齿轮安装在所述一个旋转轴上。 行星齿轮安装在剩余的至少一个旋转轴上，以便能够与太阳齿轮传动啮合，并且固定地安装在太阳齿轮周围的内齿轮。

    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
    79.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    包含电容元件的半导体器件及其制造方法

    公开(公告)号：US20120190154A1

    公开(公告)日：2012-07-26

    申请号：US13434177

    申请日：2012-03-29

    申请人： Tetsuo Yoshimura ,  Kenichi Watanabe ,  Satoshi Otsuka

    发明人： Tetsuo Yoshimura ,  Kenichi Watanabe ,  Satoshi Otsuka

    IPC分类号： H01L21/768 ,  H01L21/02

    CPC分类号： H01G4/005 ,  H01G4/228 ,  H01G4/33 ,  H01L23/5223 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively.

    摘要翻译： 半导体器件包括衬底，在衬底上形成的绝缘膜，形成在绝缘膜中的第一和第二导电插塞，电容器元件和布线。 电容器元件包括下电极，电介质膜和上电极。 下电极连接到第一插头的端部并形成在绝缘膜上，并且包括第一阻挡膜。 电介质膜形成在下电极的上表面和侧表面上。 上电极形成在电介质膜上，并且包括比下电极宽的第二阻挡金属膜。 布线连接到第二插头的端部并形成在绝缘膜上，并且包括形成在第一层上的第一层和第二层。 第一层和第二层分别包括第一和第二阻挡金属膜。

    Semiconductor device having multilevel copper wiring layers and its manufacture method
    80.
    发明授权
    Semiconductor device having multilevel copper wiring layers and its manufacture method 有权
    具有多层铜布线层的半导体器件及其制造方法

    公开(公告)号：US08188602B2

    公开(公告)日：2012-05-29

    申请号：US10350219

    申请日：2003-01-24

    申请人： Satoshi Otsuka ,  Shun-ichi Fukuyama

    发明人： Satoshi Otsuka ,  Shun-ichi Fukuyama

    IPC分类号： H01L51/46

    CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76832 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To provide a semiconductor device having copper wiring layers and organic insulating resin layers with less separation and its manufacture method.A semiconductor device has: a semiconductor substrate formed with a number of semiconductor elements; a first interlayer insulating film formed above the semiconductor substrate and having a first wiring recess; a first copper wiring embedded in the first wiring recess; a second interlayer insulating film having a second wiring recess, the second interlayer insulating film including a copper diffusion preventing layer formed on the first copper wiring and the first interlayer insulating film, an oxide film formed on the copper diffusion preventing layer, and an organic insulating resin layer formed on the oxide film; and a second copper wiring embedded in the second wiring recess.

    摘要翻译： 提供具有铜布线层的半导体器件和具有较小分离性的有机绝缘树脂层及其制造方法。 半导体器件具有：形成有多个半导体元件的半导体衬底; 形成在所述半导体衬底上并具有第一布线凹槽的第一层间绝缘膜; 嵌入在所述第一布线槽中的第一铜布线; 具有第二布线凹槽的第二层间绝缘膜，所述第二层间绝缘膜包括形成在所述第一铜布线和所述第一层间绝缘膜上的铜扩散防止层，形成在所述铜扩散防止层上的氧化膜，以及有机隔离层 在氧化膜上形成树脂层; 以及嵌入在第二布线凹槽中的第二铜布线。