公开(公告)号：US20080088980A1

公开(公告)日：2008-04-17

申请号：US11832203

申请日：2007-08-01

申请人： Eiji KITAGAWA ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji KITAGAWA ,  Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/16 ,  B82Y25/00 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08 ,  Y10S977/935

摘要： A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

摘要翻译： 磁阻元件包括含有磁性材料并具有（001）面定向的fct晶体结构的自由层，该自由层具有垂直于膜平面的磁化并且具有可通过自旋极化而变化的方向 电子，第一非磁性层和夹层自由层并具有四方晶体结构和立方晶体结构中的一个的第一非磁性层，以及固定层，其仅设置在自由层的一侧上，并且在 所述第一非磁性层与具有所述自由层的表面相对并且包含磁性材料，所述固定层具有垂直于膜平面且具有固定方向的磁化。

公开(公告)号：US20080043519A1

公开(公告)日：2008-02-21

申请号：US11829408

申请日：2007-07-27

申请人： Eiji KITAGAWA ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Eiji KITAGAWA ,  Masatoshi Yoshikawa ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： G11C11/00

CPC分类号： G11C11/1693 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An inadvertent write can be prevented when a read is performed. The duration of the write current pulse for writing information in the magnetic memory layer is longer than the duration of the read current pulse for reading the information from the magnetic memory layer.

摘要翻译： 当执行读取时，可以防止无意写入。 用于在磁存储层中写入信息的写入电流脉冲的持续时间长于用于从磁存储层读取信息的读取电流脉冲的持续时间。

公开(公告)号：US20070014149A1

公开(公告)日：2007-01-18

申请号：US11384566

申请日：2006-03-21

申请人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

发明人： Makoto Nagamine ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Katsuya Nishiyama ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

摘要翻译： 磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层 以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位 所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

公开(公告)号：US20060132984A1

公开(公告)日：2006-06-22

申请号：US11060301

申请日：2005-02-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

摘要翻译： 一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及 所述第一轭层包括第一，第二和第三区域。 并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线 ，第五和第六个地区。

公开(公告)号：US07064402B2

公开(公告)日：2006-06-20

申请号：US11189851

申请日：2005-07-27

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

公开(公告)号：US20050259464A1

公开(公告)日：2005-11-24

申请号：US11189851

申请日：2005-07-27

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Yoshiaki Asao ,  Hiroaki Yoda

IPC分类号： H01L27/105 ,  G11B5/33 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory concerning an example of the present invention comprises a magneto resistive element, a first insulating layer which covers side surfaces of the magneto resistive element, a second insulating layer which is arranged on the first insulating layer and has a first groove on the magneto resistive element, a write line which fills the first groove and is connected with the magneto resistive element, and a third insulating layer which is arranged between the first and second insulating layers except a bottom portion of the first groove and has an etching selection ratio with respect to at least the first and second insulating layers.

摘要翻译： 关于本发明的实例的磁性随机存取存储器包括磁阻元件，覆盖磁阻元件的侧表面的第一绝缘层，布置在第一绝缘层上并具有第一凹槽的第二绝缘层 磁阻元件，填充第一沟槽并与磁阻元件连接的写入线以及布置在除了第一沟槽的底部之外的第一和第二绝缘层之间的第三绝缘层，并且具有蚀刻选择 至少相对于第一绝缘层和第二绝缘层。

公开(公告)号：US09595663B2

公开(公告)日：2017-03-14

申请号：US14479180

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.

摘要翻译： 根据一个实施例，磁存储器包括在半导体衬底中具有第一和第二扩散层的晶体管和位于第一和第二扩散层之间的栅电极，半导体衬底上的第一绝缘层，覆盖晶体管的第一绝缘层， 第一绝缘层中的第一接触插塞，连接到第一扩散层的第一接触插塞，第一绝缘层中的第二接触插塞，连接到第二扩散层的第二接触插塞，第一绝缘层上的磁阻元件 连接到第一接触插塞的磁阻元件，磁阻元件上的电极以及第一绝缘层，第二接触插塞和电极中的杂质区域。

公开(公告)号：US09508922B2

公开(公告)日：2016-11-29

申请号：US14642506

申请日：2015-03-09

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.

摘要翻译： 根据一个实施例，磁存储器件包括第一堆叠结构，其包括第一磁性层和设置在第一磁性层上的第一非磁性层，第二堆叠结构，包括设置在第一非磁性层上的第二磁性层，第二层 设置在第二磁性层上的非磁性层和设置在第二非磁性层上的顶部导电层，以及设置在第二堆叠结构的侧壁上的侧壁导电层。

公开(公告)号：US09425388B2

公开(公告)日：2016-08-23

申请号：US14200429

申请日：2014-03-07

申请人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa

发明人： Kazuhiro Tomioka ,  Satoshi Seto ,  Masatoshi Yoshikawa

IPC分类号： H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic element includes a first magnetic layer, a first non-magnetic layer on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer, the third magnetic layer having a side wall layer including a material which is included in the second non-magnetic layer; wherein the material is one of Ru and Pt as a common material to the side wall layer and the second non-magnetic layer.

摘要翻译： 磁性元件包括第一磁性层，第一磁性层上的第一非磁性层，第一非磁性层上的第二磁性层，第二磁性层上的第二非磁性层，第三磁性层 在所述第二非磁性层上，所述第三磁性层具有包括在所述第二非磁性层中的材料的侧壁层; 其中所述材料是作为侧壁层和第二非磁性层的共同材料的Ru和Pt中的一种。

公开(公告)号：US08299552B2

公开(公告)日：2012-10-30

申请号：US12233100

申请日：2008-09-18

申请人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadaomi Daibou ,  Tatsuya Kishi ,  Hiroaki Yoda

发明人： Toshihiko Nagase ,  Masatoshi Yoshikawa ,  Eiji Kitagawa ,  Katsuya Nishiyama ,  Tadaomi Daibou ,  Tatsuya Kishi ,  Hiroaki Yoda

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228

摘要： A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.

摘要翻译： 磁阻元件包括具有NaCl结构并且包含在（001）面中取向的氮化物的第一下层，具有垂直于膜表面的具有L10结构的磁各向异性的第一下层上的第一磁性层，以及 含有在（001）面取向的铁磁性合金，设置在第一磁性层上的第一非磁性层和设置在第一非磁性层上并具有垂直于膜表面的磁各向异性的第二磁性层。