公开(公告)号：US09595663B2

公开(公告)日：2017-03-14

申请号：US14479180

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Yasuyuki Sonoda ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.

摘要翻译： 根据一个实施例，磁存储器包括在半导体衬底中具有第一和第二扩散层的晶体管和位于第一和第二扩散层之间的栅电极，半导体衬底上的第一绝缘层，覆盖晶体管的第一绝缘层， 第一绝缘层中的第一接触插塞，连接到第一扩散层的第一接触插塞，第一绝缘层中的第二接触插塞，连接到第二扩散层的第二接触插塞，第一绝缘层上的磁阻元件 连接到第一接触插塞的磁阻元件，磁阻元件上的电极以及第一绝缘层，第二接触插塞和电极中的杂质区域。

公开(公告)号：US09698338B2

公开(公告)日：2017-07-04

申请号：US14639675

申请日：2015-03-05

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L27/22 ,  H01L21/00 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.

公开(公告)号：US09508922B2

公开(公告)日：2016-11-29

申请号：US14642506

申请日：2015-03-09

申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Shuichi Tsubata ,  Kazuhiro Tomioka

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.

摘要翻译： 根据一个实施例，磁存储器件包括第一堆叠结构，其包括第一磁性层和设置在第一磁性层上的第一非磁性层，第二堆叠结构，包括设置在第一非磁性层上的第二磁性层，第二层 设置在第二磁性层上的非磁性层和设置在第二非磁性层上的顶部导电层，以及设置在第二堆叠结构的侧壁上的侧壁导电层。

公开(公告)号：US09570671B2

公开(公告)日：2017-02-14

申请号：US14479192

申请日：2014-09-05

申请人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

发明人： Masatoshi Yoshikawa ,  Hiroaki Yoda ,  Shuichi Tsubata ,  Kenji Noma ,  Tatsuya Kishi ,  Satoshi Seto ,  Kazuhiro Tomioka

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

摘要翻译： 根据一个实施例，磁存储器件包括堆叠结构，其包括磁性元件，覆盖层叠结构的保护绝缘膜以及设置在堆叠结构和保护绝缘膜之间的界面处的界面层。 界面层包含不包含在磁性元件或保护绝缘膜中的预定元件。

公开(公告)号：US09093632B2

公开(公告)日：2015-07-28

申请号：US14203422

申请日：2014-03-10

申请人： Shuichi Tsubata ,  Masatoshi Yoshikawa ,  Satoshi Seto ,  Kazuhiro Tomioka ,  Ga Young Ha

发明人： Shuichi Tsubata ,  Masatoshi Yoshikawa ,  Satoshi Seto ,  Kazuhiro Tomioka ,  Ga Young Ha

IPC分类号： H01L27/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L21/28

CPC分类号： H01L43/12 ,  H01L21/0234 ,  H01L21/28202 ,  H01L27/222 ,  H01L27/224 ,  H01L27/226 ,  H01L27/228 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/78 ,  H01L43/02

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括形成在半导体衬底上的磁阻元件，延伸穿过形成在半导体衬底上并紧靠磁阻元件下方的层间绝缘膜的第一接触插塞具有与 半导体衬底的上表面，并且与磁阻元件相邻，以及形成在磁阻元件和第一接触插塞之间以及层间电介质膜上的绝缘膜，其中绝缘膜包括位于 所述层间电介质膜和位于所述绝缘膜中并位于所述第一区域的上表面上的第二区域，所述绝缘膜由SiN制成，并且所述第一区域与所述第二区域相比是富氮膜。

公开(公告)号：US09397289B2

公开(公告)日：2016-07-19

申请号：US14312184

申请日：2014-06-23

申请人： Shuichi Tsubata

发明人： Shuichi Tsubata

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： A nonvolatile semiconductor memory device is provided with a magnetoresistive effect element formed on a substrate, and an insulating film formed above the substrate to cover the magnetoresistive effect element. The insulating film is formed of a silicon nitride, and has a portion of a higher nitrogen concentration than a surface portion thereof.

摘要翻译： 非易失性半导体存储器件设置有形成在基板上的磁阻效应元件和形成在基板上方以覆盖磁阻效应元件的绝缘膜。 绝缘膜由氮化硅形成，并且具有比其表面部分高的氮浓度的一部分。

公开(公告)号：US08956982B2

公开(公告)日：2015-02-17

申请号：US13300262

申请日：2011-11-18

申请人： Shuichi Tsubata ,  Hirotaka Ogihara

发明人： Shuichi Tsubata ,  Hirotaka Ogihara

IPC分类号： H01L21/31 ,  H01L21/033 ,  H01L27/10 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L21/0332 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： According to one embodiment, a stacked film including at least a silicon oxide film is formed by stacking a plurality of films formed of different materials and a hard mask pattern is formed on the stacked film. Then, a stacked film pattern of a predetermined shape is formed by performing anisotropic etching on the stacked film by using the hard mask pattern as an etching mask and the hard mask pattern is removed. The hard mask pattern is formed by stacking at least one first hard mask layer and at least one second hard mask layer. The first hard mask layer is formed of a material having a higher removability in wet etching than the second hard mask layer. The first hard mask layer is arranged immediately above the stacked film.

摘要翻译： 根据一个实施例，通过堆叠由不同材料形成的多个膜来形成至少包括氧化硅膜的堆叠膜，并且在堆叠膜上形成硬掩模图案。 然后，通过使用硬掩模图案作为蚀刻掩模对叠层膜进行各向异性蚀刻来形成预定形状的堆叠膜图案，并且去除硬掩模图案。 硬掩模图案通过堆叠至少一个第一硬掩模层和至少一个第二硬掩模层而形成。 第一硬掩模层由在湿蚀刻中具有比第二硬掩模层更高的可移除性的材料形成。 第一硬掩模层布置在堆叠膜的正上方。