公开(公告)号：US07525775B2

公开(公告)日：2009-04-28

申请号：US11283033

申请日：2005-11-17

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James Mac Freitag ,  Stefan Maat ,  Mustafa Michael Pinarbasi

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James Mac Freitag ,  Stefan Maat ,  Mustafa Michael Pinarbasi

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.

摘要翻译： 具有改善的钉扎场强的磁阻传感器。 传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。 通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。 底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。 磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。 本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。 然后将AFM层沉积在磁性层上。 然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。 这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

公开(公告)号：US07446986B2

公开(公告)日：2008-11-04

申请号：US10931677

申请日：2004-08-31

申请人： Satoru Araki ,  Jeffrey Robinson Childress ,  Stefan Maat ,  Daniele Mauri ,  Matthew Joseph Carey

发明人： Satoru Araki ,  Jeffrey Robinson Childress ,  Stefan Maat ,  Daniele Mauri ,  Matthew Joseph Carey

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.

摘要翻译： 具有堆叠偏压结构的磁阻传感器。 传感器包括偏置间隔件，其允许在与偏压层的磁矩正交的方向上偏置自由层磁矩。

公开(公告)号：US07372116B2

公开(公告)日：2008-05-13

申请号：US10869315

申请日：2004-06-16

申请人： Eric Edward Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

发明人： Eric Edward Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

IPC分类号： H01L29/82 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.

摘要翻译： 一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。

公开(公告)号：US20080088982A1

公开(公告)日：2008-04-17

申请号：US11549879

申请日：2006-10-16

申请人： Liesl Folks ,  Robert E. Fontana ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

发明人： Liesl Folks ,  Robert E. Fontana ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

IPC分类号： G11B5/33

CPC分类号： G11B5/3993

摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.

摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

公开(公告)号：US20080074802A1

公开(公告)日：2008-03-27

申请号：US11525790

申请日：2006-09-21

申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272

摘要： A current perpendicular to plane dual giant magnetoresistive sensor (dual CPP GMR sensor) that prevents spin torque noise while having high dR/R performance. The sensor has a design that maximizes the GMR effect (dR/R) by providing a pinned layer structure that maximizes the positive GMR contribution of the AP2 layer (or magnetic layer closest to the spacer layer) while minimizing the negative GMR contribution of the AP1 layer (or layer furthest from the spacer layer). The pinned layer structure includes an AP1 layer that includes a thin CoFe layer that is exchange coupled with an IrMn or IrMnCr AFM layer and has two or more Co layers with a spin blocking layer sandwiched between them. The use of the Co layers and the spin blocking layer in the AP1 layer minimizes the negative contribution of the AP1 layer. The AP2 layer has a plurality of CoFe layers with nano-layers such as Cu sandwiched between the CoFe layers. The nano-layers increase the already strong GMR effect provided by the CoFe layers, increasing the positive GMR effect from the AP2 layer.

摘要翻译： 垂直于平面双巨磁阻传感器（双CPP GMR传感器）的电流，可防止旋转扭矩噪声，同时具有高dR / R性能。 传感器具有通过提供使AP2层（或最靠近间隔层的磁性层）的正GMR贡献最大化的钉扎层结构来最大化GMR效应（dR / R）的设计，同时使AP1的负GMR贡献最小化 层（或距离间隔层最远的层）。 钉扎层结构包括AP1层，其包括与IrMn或IrMnCr AFM层交换耦合的薄CoFe层，并且具有夹在其间的自旋阻挡层的两个或更多个Co层。 在AP1层中使用Co层和自旋阻挡层使AP1层的负面贡献最小化。 AP2层具有夹在CoFe层之间的具有纳米层的多个CoFe层，例如Cu。 纳米层增加了由CoFe层提供的已经很强的GMR效应，增加了来自AP2层的正GMR效应。

公开(公告)号：US20070253243A1

公开(公告)日：2007-11-01

申请号：US11380498

申请日：2006-04-27

申请人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

发明人： Robert Fontana ,  Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.

摘要翻译： 公开了由交叉点存储器阵列组成的固态存储器。 交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。 存储器阵列还包括位于第一和第二导线之间的多个存储单元。 存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。 一阶相变导致金属材料的电阻率的相应变化。

公开(公告)号：US07199984B2

公开(公告)日：2007-04-03

申请号：US10802639

申请日：2004-03-16

申请人： Matthew J. Carey ,  Jeffrey R. Childress ,  Bruce A. Gurney ,  Stefan Maat

发明人： Matthew J. Carey ,  Jeffrey R. Childress ,  Bruce A. Gurney ,  Stefan Maat

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/30 ,  H01F10/3268 ,  H01F10/3295

摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is a biasing ferromagnetic layer and the other ferromagnetic layer is the sensor free layer. An antiferromagnetic layer exchange-couples the biasing layer to fix its moment parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers. The electrically-conducting spacer layer, the biasing layer and the antiferromagnetic layer that exchange-couples the biasing layer may all extend beyond the edges of the sensor stack.

摘要翻译： 磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。 该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。 该结构的铁磁层之一是偏置铁磁层，另一个铁磁层是传感器自由层。 反铁磁层将偏置层交换耦合以固定其平行于传感器固定层的力矩的力矩。 这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。 交换耦合偏置层的导电间隔层，偏置层和反铁磁层可以全部延伸超出传感器堆叠的边缘。

公开(公告)号：US06842306B2

公开(公告)日：2005-01-11

申请号：US10284988

申请日：2002-10-31

申请人： Marie-Claire Cyrille ,  Wen-Chien David Hsiao ,  Yongho Sungtaek Ju ,  Wen-Yaung Lee ,  Stefan Maat ,  Howard Gordon Zolla

发明人： Marie-Claire Cyrille ,  Wen-Chien David Hsiao ,  Yongho Sungtaek Ju ,  Wen-Yaung Lee ,  Stefan Maat ,  Howard Gordon Zolla

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/235

CPC分类号： G11B5/3906

摘要： A magnetic head has highly thermally conductive insulator materials containing cobalt-oxide so that heat can more effectively dissipate from the magnetic head. In one illustrative example, the magnetic head has first and second gap layers and a read sensor disposed between the first and the second gap layers. The first and the second gap layers are advantageously made of cobalt-oxide (CoOx) (e.g. CoO or Co2O3), which may exhibit a thermal conductivity of between 5-8 watts/meter-Kelvin or greater. In another illustrative example, a magnetic head is made of a substrate; first and second shield layers; an undercoat layer formed between the substrate and the first shield layer; first and second gap layers formed between the first and the second shield layers; and a read sensor formed between the first and the second gap layers. The undercoat layer is also made of CoOx. The improved dissipation of heat from the magnetic head improves the read sensor performance and reduces the likelihood of other problems, such as head-to-disk interface problems.

摘要翻译： 磁头具有含有氧化钴的高导热绝缘体材料，使得热量可以更有效地从磁头中消散。 在一个说明性示例中，磁头具有第一和第二间隙层以及设置在第一间隙层和第二间隙层之间的读取传感器。 第一和第二间隙层有利地由氧化钴（CoO x）（例如CoO或Co 2 O 3）制成，其可以表现出5-8瓦/米 - 开尔文或更高的热导率。 在另一示例性实例中，磁头由衬底制成; 第一和第二屏蔽层; 形成在所述基板和所述第一屏蔽层之间的底涂层; 形成在第一和第二屏蔽层之间的第一和第二间隙层; 以及形成在第一间隙层和第二间隙层之间的读取传感器。 底涂层也由CoOx制成。 来自磁头的热量的改善消耗提高了读取传感器的性能，并降低了其他问题的可能性，例如磁头到磁盘的接口问题。

公开(公告)号：US06836392B2

公开(公告)日：2004-12-28

申请号：US09841942

申请日：2001-04-24

申请人： Matthew Joseph Carey ,  Eric Edward Fullerton ,  Bruce Alvin Gurney ,  Thai Le ,  Stefan Maat ,  Philip Milton Rice

发明人： Matthew Joseph Carey ,  Eric Edward Fullerton ,  Bruce Alvin Gurney ,  Thai Le ,  Stefan Maat ,  Philip Milton Rice

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/3277

摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.

摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。

公开(公告)号：US08385025B2

公开(公告)日：2013-02-26

申请号：US12969466

申请日：2010-12-15

申请人： Stefan Maat ,  Alexander M. Zeltser

发明人： Stefan Maat ,  Alexander M. Zeltser

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has an improved seed layer structure for the ferromagnetic hard (high coercivity) bias layer that is used to longitudinally bias the sensor's free ferromagnetic layer. The seed layer structure is a trilayer consisting of a first seed layer of tantalum (Ta), a second seed layer of one or both titanium (Ti) and Ti-oxide on and in contact with the Ta layer, and a third seed layer of tungsten (W) on and in contact with the second seed layer.

摘要翻译： 电流垂直于平面（CPP）磁阻（MR）传感器具有用于铁磁硬（高矫顽力）偏置层的改进的种子层结构，其用于纵向偏置传感器的自由铁磁层。 种子层结构是由钽（Ta）的第一种子层，与Ta层接触并与Ta层接触的钛（Ti）和Ti氧化物中的一种或两种的第二晶种层组成的三层，以及第三种子层 钨（W）与第二种子层接触并接触。