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    Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor
    1.
    发明授权
    Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor 失效
    斜角蚀刻底层，用于改进磁阻传感器中的交换偏置结构

    公开(公告)号：US07525775B2

    公开(公告)日：2009-04-28

    申请号：US11283033

    申请日：2005-11-17

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James Mac Freitag ,  Stefan Maat ,  Mustafa Michael Pinarbasi

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James Mac Freitag ,  Stefan Maat ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.

    摘要翻译： 具有改善的钉扎场强的磁阻传感器。 传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。 通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。 底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。 磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。 本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。 然后将AFM层沉积在磁性层上。 然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。 这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

    Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer
    2.
    发明授权
    Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer 有权
    电流垂直于具有改进的钉扎层的平面（CPP）磁阻传感器

    公开(公告)号：US07649719B2

    公开(公告)日：2010-01-19

    申请号：US11525790

    申请日：2006-09-21

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272

    摘要： A current perpendicular to plane dual giant magnetoresistive sensor (dual CPP GMR sensor) that prevents spin torque noise while having high dR/R performance. The sensor has a design that maximizes the GMR effect (dR/R) by providing a pinned layer structure that maximizes the positive GMR contribution of the AP2 layer (or magnetic layer closest to the spacer layer) while minimizing the negative GMR contribution of the AP1 layer. The pinned layer structure includes an AP1 layer that includes a thin CoFe layer that is exchange coupled with an IrMn or IrMnCr AFM layer and has two or more Co layers with a spin blocking layer sandwiched between them. The use of the Co layers and the spin blocking layer in the AP1 layer minimizes the negative contribution of the AP1 layer. The AP2 layer has a plurality of CoFe layers with nano-layers such as Cu sandwiched between the CoFe layers.

    摘要翻译： 垂直于平面双巨磁阻传感器（双CPP GMR传感器）的电流，可防止旋转扭矩噪声，同时具有高dR / R性能。 传感器具有通过提供使AP2层（或最靠近间隔层的磁性层）的正GMR贡献最大化的钉扎层结构来最大化GMR效应（dR / R）的设计，同时使AP1的负GMR贡献最小化 层。 钉扎层结构包括AP1层，其包括与IrMn或IrMnCr AFM层交换耦合的薄CoFe层，并且具有夹在其间的自旋阻挡层的两个或更多个Co层。 在AP1层中使用Co层和自旋阻挡层使AP1层的负面贡献最小化。 AP2层具有夹在CoFe层之间的具有纳米层的多个CoFe层，例如Cu。

    Magnetically anisotropic shield for use in magnetic data recording
    3.
    发明授权
    Magnetically anisotropic shield for use in magnetic data recording 失效
    用于磁数据记录的磁各向异性屏蔽

    公开(公告)号：US07436634B2

    公开(公告)日：2008-10-14

    申请号：US11615840

    申请日：2006-12-22

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC分类号： G11B5/10 ,  G11B5/39

    CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetic shield for use in a magnetic head. The magnetic shield has a magnetic anisotropy associated with a magnetic easy axis of magnetization oriented substantially parallel with the air bearing surface. The magnetic anisotropy of the shield is induced by an anisotropic surface texture. This anisotropic surface texture can be formed in a surface of one or more magnetic layers of the shield, or can be formed in a surface of an under-layer on which the shield is deposited. The shield could also be constructed as a lamination of magnetic layers separated by non-magnetic layers, with the anisotropic surface texture being formed on one or more of the non-magnetic layers.

    摘要翻译： 用于磁头的磁屏蔽。 磁屏蔽具有与磁性易磁化轴相关联的磁各向异性，该磁性易磁化轴基本上平行于空气轴承表面定向。 屏蔽的磁各向异性由各向异性表面纹理引起。 这种各向异性表面纹理可以形成在屏蔽的一个或多个磁性层的表面中，或者可以形成在其上沉积有屏蔽层的下层的表面中。 屏蔽也可以被构造为由非磁性层分离的磁性层的叠层，各向异性表面纹理形成在一个或多个非磁性层上。

    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer
    4.
    发明授权
    Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer 失效
    使用倾斜蚀刻底层的磁性读取传感器，用于在自偏压自由层中诱导单轴磁各向异性

    公开(公告)号：US07382586B2

    公开(公告)日：2008-06-03

    申请号：US11177990

    申请日：2005-07-07

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  James L. Nix ,  Stefan Maat ,  Ian Robson McFadyen

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3932 ,  H01F10/16 ,  H01F10/30 ,  H01F41/306 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.

    摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

    Increased anisotropy induced by direct ion etch for telecommunications/electronics devices
    5.
    发明授权
    Increased anisotropy induced by direct ion etch for telecommunications/electronics devices 有权
    通过电子/电子设备的直接离子蚀刻引起的各向异性增加

    公开(公告)号：US08004374B2

    公开(公告)日：2011-08-23

    申请号：US11845239

    申请日：2007-08-27

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC分类号： H03H7/01 ,  H01P1/20

    CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49075

    摘要： A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.

    摘要翻译： 一种微波带阻滤波器，其具有在电介质材料上形成的磁条。 磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。 磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。 或者，各向异性表面纹理可以形成在下层和磁条本身上。 该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。

    Magnetic write head having a magnetically anisotropic write pole
    9.
    发明授权
    Magnetic write head having a magnetically anisotropic write pole 失效
    具有磁各向异性写磁极的磁写头

    公开(公告)号：US07382573B2

    公开(公告)日：2008-06-03

    申请号：US11615837

    申请日：2006-12-22

    申请人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    发明人： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC分类号： G11B5/147

    CPC分类号： G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A magnetic write head for magnetic data recording. The magnetic write head has a write pole with a magnetic anisotropy induced by an angled, directional ion milling of a seed layer. The magnetic anisotropy is such that a magnetic easy axis of magnetization is oriented substantially parallel with the air bearing surface (ABS) of the write head. This orientation of the easy axis of magnetization increases the write speed and data rate of the write head by increasing the speed with which the magnetization of the write pole can switch from one direction to another writing.

    摘要翻译： 用于磁数据记录的磁写头。 磁写头具有由种子层的倾斜的定向离子铣削引起的具有磁各向异性的写极。 磁各向异性使得易磁化磁化轴取向为大致平行于写入头的空气轴承表面（ABS）。 易磁化轴的这种取向通过增加写磁极的磁化从一个方向转换到另一个写入的速度来增加写入头的写入速度和数据速率。