摘要:
The disclosure relates to an optical system of a microlithographic projection exposure apparatus and to a microlithographic exposure method. An optical system of a microlithographic projection exposure apparatus includes an image rotator, which is arranged in the optical system such that light impinging on the image rotator is at least partially polarized. The image rotator rotates, for light impinging on the image rotator, both the intensity distribution and the polarization distribution of through a given angle of rotation.
摘要:
An illumination system for a microlithographic projection exposure apparatus includes an EUV light source which generates an emission beam of linearly polarized EUV illumination light. An illumination optics guides the emission beam along an optical axis which causes an illumination field in a reticle plane to be illuminated by the emission beam. The illumination system also includes an illumination subunit of the illumination system. The illumination subunit includes at least the EUV light source and a polarization setting device for setting a defined polarization of the EUV emission beam of the illumination subunit.
摘要:
An optical system, such as an illumination device or a projection objective of a microlithographic projection exposure apparatus, is disclosed. The optical system can include a polarization compensator which has at least one polarization-modifying partial element. The optical system can also include a manipulator by which the position of the at least one partial element can be altered. At least one operating mode of the optical system can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis and which can be illuminated with light from the light source, does not exceed 20% of the maximum intensity in the plane, and the manipulator is arranged in the region.
摘要:
The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.
摘要:
The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source for producing light in the EUV region. The projection exposure system further comprises a first optical system for illuminating a mask by the light of the light source and a second optical system for imaging the mask on a component. At least one polarization-optical element is disposed on the beam path between the light source and the component.
摘要:
An optical system, such as an illumination device or a projection objective of a microlithographic projection exposure apparatus, is disclosed. The optical system can include a polarization compensator which has at least one polarization-modifying partial element. The optical system can also include a manipulator by which the position of the at least one partial element can be altered. At least one operating mode of the optical system can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis and which can be illuminated with light from the light source, does not exceed 20% of the maximum intensity in the plane, and the manipulator is arranged in the region.
摘要:
The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.
摘要:
The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.
摘要:
The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source (18) for producing light in the EUV region. The projection exposure system further comprises a first optical system (19, 20, 21, 22, 23, 24) for illuminating a mask (25) by the light of the light source (18) and a second optical system (26, 27, 28, 29, 30, 31) for imaging the mask (25) on a component (32). At least one polarization-optical element (1) is disposed on the beam path between the light source (18) and the component (32).
摘要:
An optical system, particularly an illumination system, of a microlithographic projection exposure apparatus contains at least one plane reflecting surface for folding the beam path. The at least one reflecting surface is arranged with respect to an optical axis of the optical system such that the intensity ratio between two mutually perpendicular polarization directions is at least substantially preserved for an axially parallel light ray deviated by the at least one reflecting surface. In accordance with a second aspect, the at least one reflecting surface is arranged such that a maximum effect on the polarization of the projection light is achieved, so as to be able to compensate for polarization dependencies which occur in other components of the illumination system.