Semiconductor device and manufacturing method for the same
    71.
    发明申请
    Semiconductor device and manufacturing method for the same 审中-公开
    半导体器件及其制造方法相同

    公开(公告)号:US20050236691A1

    公开(公告)日:2005-10-27

    申请号:US11107740

    申请日:2005-04-18

    申请人: Yasuhiro Shimada

    发明人: Yasuhiro Shimada

    摘要: A manufacturing method for a semiconductor device that includes a crystal of metal-insulator phase transition material as a resistor, the method having the steps of forming an electrode on a semiconductor substrate, forming an insulating film on the electrode, forming a through-hole in the insulating film so as to expose the electrode, and housing the crystal in the through-hole so as to contact the electrode.

    摘要翻译: 一种半导体器件的制造方法,其包括金属 - 绝缘体相变材料的晶体作为电阻器,所述方法具有以下步骤:在半导体衬底上形成电极,在所述电极上形成绝缘膜,在所述电极上形成通孔 绝缘膜以露出电极,并将晶体容纳在通孔中以与电极接触。

    Optical deflector having neutral surface of bending in movable member in different plane from neutral surface of bending in elastic support member
    72.
    发明申请
    Optical deflector having neutral surface of bending in movable member in different plane from neutral surface of bending in elastic support member 失效
    光学偏转器具有在弹性支撑构件中在可动构件中在与弹性支撑构件的弯曲的中性表面不同的平面中弯曲的中性表面

    公开(公告)号:US20050225822A1

    公开(公告)日:2005-10-13

    申请号:US11091630

    申请日:2005-03-29

    CPC分类号: G02B26/0833

    摘要: An optical deflector including a support substrate, a movable member, a reflective face, and a mounting structure for fixing the support substrate thereto. The movable member is rotatably or swingingly supported by the support substrate through elastic support members. The reflective face is provided on the movable member and deflects light incident thereon when the movable member is swung relatively to the support substrate. In the optical deflector, neutral surfaces of bending in a direction of a normal to the reflective face in the elastic support member and the movable member are not present in the same plane, and the support substrate is fixed to the mounting structure at a face of the support substrate on a side of the neutral surface in the movable member opposite to a side of the neutral surface in the elastic support member.

    摘要翻译: 一种光学偏转器,包括支撑基板,可移动部件,反射面和用于将支撑基板固定到其上的安装结构。 可动构件通过弹性支撑构件由支撑衬底可旋转地或可摆动地支撑。 当可动构件相对于支撑衬底摆动时,反射面设置在可动构件上并偏转入射到其上的光。 在光学偏转器中,在弹性支撑构件和可动构件的反射面的法线方向上弯曲的中性表面不存在于同一平面中,并且支撑基板被固定到安装结构的表面 所述支撑基板在所述可动构件的所述中性面的与所述弹性支撑构件中的所述中性面的侧面相反的一侧。

    Semiconductor memory device and electronic apparatus mounting the same
    73.
    发明授权
    Semiconductor memory device and electronic apparatus mounting the same 失效
    半导体存储器件和安装它的电子设备

    公开(公告)号:US06950327B2

    公开(公告)日:2005-09-27

    申请号:US10686583

    申请日:2003-10-17

    IPC分类号: G11C11/22

    CPC分类号: G11C11/22

    摘要: In a ferroelectric capacitor, two displacements (points b and c) of a remanent polarization correspond to data “1” and one displacement (point a) of the remanent polarization corresponds to data “0”. When the data “1” is written, either of two electric voltage pulses different in potential or in pulse width is applied to the ferroelectric capacitor to position the displacement of the remanent polarization in the ferroelectric capacitor at the point b or at the point c. When the data “0” is written, on the other hand, the displacement of the remanent polarization in the ferroelectric capacitor is positioned at the point a.

    摘要翻译: 在铁电电容器中,剩余极化的两个位移(点b和c)对应于数据“1”,剩余极化的一个位移(点a)对应于数据“0”。 当写入数据“1”时,电压或脉冲宽度不同的两个电压脉冲中的任一个施加到铁电电容器,以将铁电电容器中剩余极化的位移定位在点b处或点c处。 另一方面,当写入数据“0”时,铁电电容器中剩余极化的位移位于点a处。

    Azo dye
    75.
    发明申请
    Azo dye 失效
    偶氮染料

    公开(公告)号:US20050119467A1

    公开(公告)日:2005-06-02

    申请号:US10980786

    申请日:2004-11-04

    CPC分类号: C09B29/0074 C09B29/0025

    摘要: An azo dye represented by formula (I): A-N═N—B  formula (I) wherein, A represents a group having a substituent required for inducing an intramolecular nucleophilic substitution reaction with a nitrogen atom of a reduced azo group as a nucleophilic species when the azo group is reductively decomposed, the group forming a compound containing the nitrogen atom in a ring structure, and B represents an aromatic or hetero ring which is bound to the azo group through a carbon atom.

    摘要翻译: 由式(I)表示的偶氮染料:<?in-line-formula description =“In-line formula”end =“lead”?> ANNB formula(I)<?in-line-formula description =“In-line 式“end =”tail“?>其中,A表示当偶氮基被还原分解时,具有作为亲核物质的还原偶氮基团的氮原子诱导分子内亲核取代反应所需的取代基的基团, 在环结构中含有氮原子的化合物,B表示通过碳原子与偶氮基结合的芳香族或杂环。

    Semiconductor device, method for fabricating the same, and method for driving the same
    78.
    发明授权
    Semiconductor device, method for fabricating the same, and method for driving the same 失效
    半导体装置及其制造方法及其驱动方法

    公开(公告)号:US06853576B2

    公开(公告)日:2005-02-08

    申请号:US10653201

    申请日:2003-09-03

    IPC分类号: G11C7/10 G11C7/12 G11C11/22

    CPC分类号: G11C11/22 G11C7/1048 G11C7/12

    摘要: A semiconductor memory device has a plurality of memory cells each having a first ferroelectric capacitor for storing data as a polarization value. First voltage applying means applies a first read voltage between the pair of electrodes of the first ferroelectric capacitor composing that one of the plurality of memory cells from which data is to be read. Data reading means detects the polarization value in the first ferroelectric capacitor when the first read voltage is applied between the pair of electrodes of the first ferroelectric capacitor and thereby reads the data stored in the first ferroelectric capacitor therefrom. A hysteresis loop in the first ferroelectric capacitor is shifted in a direction of voltage opposite in polarity to the first read voltage.

    摘要翻译: 半导体存储器件具有多个存储单元,每个存储单元具有用于存储数据作为极化值的第一铁电电容器。 第一电压施加装置在构成要从其读取数据的多个存储单元中的一个的第一强电介质电容器的一对电极之间施加第一读取电压。 当在第一强电介质电容器的一对电极之间施加第一读取电压时,数据读取装置检测第一铁电电容器中的极化值,从而读取存储在第一铁电电容器中的数据。 第一铁电电容器中的磁滞回线在与第一读取电压的极性相反的电压方向上偏移。

    Dye-forming coupler, silver halide photographic light-sensitive material, and method for producing an azomethine dye
    79.
    发明授权
    Dye-forming coupler, silver halide photographic light-sensitive material, and method for producing an azomethine dye 失效
    染料成色剂,卤化银照相感光材料和偶氮甲碱染料的制备方法

    公开(公告)号:US06803181B2

    公开(公告)日:2004-10-12

    申请号:US10270055

    申请日:2002-10-15

    IPC分类号: G03C108

    CPC分类号: G03C7/38

    摘要: A dye-forming coupler of the formula (I). A silver halide photographic light-sensitive material that contains at least one dye-forming coupler of the formula (I). A method for producing an azomethine dye, which method comprises using a compound of the formula (I): wherein E is an aryl, heterocyclic, or —C(═O)W group, in which W is a nitrogen-containing heterocyclic group, Z is an aryl or heterocyclic group, and X and Y each independently are ═O, ═S or ═N—R, in which R is a substituent, with the proviso that when E is an aryl or heterocyclic group, X and Y each are ═O, and that when E is a —C(═O)W group, Z is a substituted aryl group.

    摘要翻译: 式(I)的染料形成成色剂。 含有至少一种式(I)的染料形成成色剂的卤化银照相感光材料。 一种制备偶氮甲碱染料的方法,该方法包括使用式(I)的化合物:其中E是芳基,杂环或-C(= O)W基,其中W是含氮杂环基, Z是芳基或杂环基,X和Y各自独立地为= O,= S或= NR,其中R是取代基,条件是当E是芳基或杂环基时,X和Y各自为= 且当E为-C(= O)W基时,Z为取代的芳基。

    Semiconductor memory and method for driving the same
    80.
    发明授权
    Semiconductor memory and method for driving the same 失效
    半导体存储器及其驱动方法

    公开(公告)号:US06753560B2

    公开(公告)日:2004-06-22

    申请号:US09891214

    申请日:2001-06-26

    IPC分类号: H01L2976

    摘要: A semiconductor memory of this invention is composed of an MFMIS transistor including a first field effect transistor and a ferroelectric capacitor formed on or above the first field effect transistor with a gate electrode of the first field effect transistor working as or being electrically connected to a lower electrode of the ferroelectric capacitor, an upper electrode of the ferroelectric capacitor working as a control gate and the first field effect transistor having a first well region; and a second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The first well region of the first field effect transistor is electrically connected to the source region of the second field effect transistor, and the gate electrode of the first field effect transistor is electrically connected to the drain region of the second field effect transistor.

    摘要翻译: 本发明的半导体存储器由包括形成在第一场效应晶体管上或第一场效应晶体管上的第一场效应晶体管和铁电电容器的MFMIS晶体管组成,其中第一场效应晶体管的栅电极用作或与下电 铁电电容器的电极,作为控制栅极的铁电电容器的上电极和具有第一阱区的第一场效应晶体管; 以及具有与第一场效应晶体管的第一阱区隔离的第二阱区的第二场效应晶体管。 第一场效应晶体管的第一阱区电连接到第二场效应晶体管的源极区域,第一场效应晶体管的栅极电连接到第二场效应晶体管的漏极区域。