摘要:
A manufacturing method for a semiconductor device that includes a crystal of metal-insulator phase transition material as a resistor, the method having the steps of forming an electrode on a semiconductor substrate, forming an insulating film on the electrode, forming a through-hole in the insulating film so as to expose the electrode, and housing the crystal in the through-hole so as to contact the electrode.
摘要:
An optical deflector including a support substrate, a movable member, a reflective face, and a mounting structure for fixing the support substrate thereto. The movable member is rotatably or swingingly supported by the support substrate through elastic support members. The reflective face is provided on the movable member and deflects light incident thereon when the movable member is swung relatively to the support substrate. In the optical deflector, neutral surfaces of bending in a direction of a normal to the reflective face in the elastic support member and the movable member are not present in the same plane, and the support substrate is fixed to the mounting structure at a face of the support substrate on a side of the neutral surface in the movable member opposite to a side of the neutral surface in the elastic support member.
摘要:
In a ferroelectric capacitor, two displacements (points b and c) of a remanent polarization correspond to data “1” and one displacement (point a) of the remanent polarization corresponds to data “0”. When the data “1” is written, either of two electric voltage pulses different in potential or in pulse width is applied to the ferroelectric capacitor to position the displacement of the remanent polarization in the ferroelectric capacitor at the point b or at the point c. When the data “0” is written, on the other hand, the displacement of the remanent polarization in the ferroelectric capacitor is positioned at the point a.
摘要:
There is disclosed a light deflector in which both ends of a movable plate is supported to a support substrate by an elastic support portion, a reflection surface is formed on one surface of the movable plate, and the movable plate is torsion-oscillated about a torsion axis of the elastic support portion as a center to deflect an incident light that enters the reflection surface, wherein a recessed portion is formed on at least one side surface of both sides, which is a surface on which the reflection surface is not formed, and between which the torsion axis of the elastic support portion is interposed.
摘要:
An azo dye represented by formula (I): A-N═N—B formula (I) wherein, A represents a group having a substituent required for inducing an intramolecular nucleophilic substitution reaction with a nitrogen atom of a reduced azo group as a nucleophilic species when the azo group is reductively decomposed, the group forming a compound containing the nitrogen atom in a ring structure, and B represents an aromatic or hetero ring which is bound to the azo group through a carbon atom.
摘要:
There are provided a small optical deflector that can be driven at a high speed with a low voltage, provides a large angle of deflection, has a low distortion even in high speed operation and has a high static flatness of a reflective surface, and a method of producing the optical deflector. The optical deflector drives a movable plate relative to a supporting substrate to deflect a light incident on a reflective surface and has a configuration in which at least two recesses are formed in a surface of the movable plate on which the reflective surface is not formed, and a magnetic material is provided in the recesses.
摘要:
The tiltable-body apparatus including a frame member, a tiltable body, and a pair of torsion springs having a twisting longitudinal axis. The torsion springs are disposed along the twisting longitudinal-axis opposingly with the tiltable body being interposed, support the tiltable body flexibly and rotatably about the twisting longitudinal axis relative to the frame member, and include a plurality of planar portions, compliant directions of which intersect each other when viewed along a direction of the twisting longitudinal axis. A center of gravity of the tiltable body is positioned on the twisting longitudinal axis of the torsion springs.
摘要:
A semiconductor memory device has a plurality of memory cells each having a first ferroelectric capacitor for storing data as a polarization value. First voltage applying means applies a first read voltage between the pair of electrodes of the first ferroelectric capacitor composing that one of the plurality of memory cells from which data is to be read. Data reading means detects the polarization value in the first ferroelectric capacitor when the first read voltage is applied between the pair of electrodes of the first ferroelectric capacitor and thereby reads the data stored in the first ferroelectric capacitor therefrom. A hysteresis loop in the first ferroelectric capacitor is shifted in a direction of voltage opposite in polarity to the first read voltage.
摘要:
A dye-forming coupler of the formula (I). A silver halide photographic light-sensitive material that contains at least one dye-forming coupler of the formula (I). A method for producing an azomethine dye, which method comprises using a compound of the formula (I): wherein E is an aryl, heterocyclic, or —C(═O)W group, in which W is a nitrogen-containing heterocyclic group, Z is an aryl or heterocyclic group, and X and Y each independently are ═O, ═S or ═N—R, in which R is a substituent, with the proviso that when E is an aryl or heterocyclic group, X and Y each are ═O, and that when E is a —C(═O)W group, Z is a substituted aryl group.
摘要:
A semiconductor memory of this invention is composed of an MFMIS transistor including a first field effect transistor and a ferroelectric capacitor formed on or above the first field effect transistor with a gate electrode of the first field effect transistor working as or being electrically connected to a lower electrode of the ferroelectric capacitor, an upper electrode of the ferroelectric capacitor working as a control gate and the first field effect transistor having a first well region; and a second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The first well region of the first field effect transistor is electrically connected to the source region of the second field effect transistor, and the gate electrode of the first field effect transistor is electrically connected to the drain region of the second field effect transistor.