Abstract:
An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.
Abstract:
An image sensor includes at least one first pixel configured to sense light in a visible light wavelength spectrum and a second pixel configured to sense light in an infrared light wavelength spectrum. The second pixel includes a first photoelectric device defined in the second pixel. The first photoelectric device includes an infrared light absorption layer between a first electrode and a second electrode and configured to selectively absorb light in an infrared spectrum. The second pixel may be configured to compensate the luminance sensitivity of the image sensor. The first and second pixels may be included in a unit pixel group. The image sensor may include an array of multiple unit pixel groups arranged in one or more rows and one or more columns.
Abstract:
An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.
Abstract:
An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.
Abstract:
An organic photoelectronic device includes a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, the active layer including a heterojunction of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor including a compound represented by Chemical Formula 1.
Abstract:
Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.
Abstract:
An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.
Abstract:
Disclosed are an organic photoelectronic device including a first light-transmitting electrode, an active layer positioned on one side of the first light-transmitting electrode, and a second light-transmitting electrode positioned on one side of the active layer, wherein the first light-transmitting electrode and the second light-transmitting electrode independently comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and fluorine-doped tin oxide (FTO). Also disclosed is an image sensor including the organic photoelectronic device.
Abstract:
An organic electronic device may include an organic semiconductor compound represented by the following Chemical Formula 1 or Chemical Formula 2. Each substituent of the above Chemical Formulas 1 and 2 may be the same as described in the detailed description.
Abstract:
A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.