Optoelectronic diodes and electronic devices including same

    公开(公告)号:US10115919B2

    公开(公告)日:2018-10-30

    申请号:US15478687

    申请日:2017-04-04

    Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.

    Image sensor and electronic device including the same

    公开(公告)号:US10008527B2

    公开(公告)日:2018-06-26

    申请号:US15664182

    申请日:2017-07-31

    Abstract: An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the semiconductor substrate and configured to selectively sense first visible light, and a plurality of color filters on separate photo-sensing devices. The plurality of color filters may include a first color filter configured to selectively transmit a second visible light that is different from the first visible light and a second color filter transmitting first mixed light including the second visible light. The electronic device may include multiple arrays of color filters. The electronic device may include different photoelectric devices on the separate arrays of color filters. The different photoelectric devices may be configured to sense different wavelength spectra of light.

    Image sensor and electronic device including the same
    77.
    发明授权
    Image sensor and electronic device including the same 有权
    图像传感器和包括其的电子设备

    公开(公告)号:US09362327B2

    公开(公告)日:2016-06-07

    申请号:US14560920

    申请日:2014-12-04

    Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

    Abstract translation: 图像传感器包括集成有至少一个第一光感测装置的半导体衬底,该第一光感测装置被配置为感测蓝色波长区域中的光,以及至少一个第二光感测装置,被配置为感测红色波长区域中的光,滤色器层 半导体衬底并且包括被配置为选择性地吸收蓝色波长区域中的光的蓝色滤色器和被配置为选择性地吸收红色波长区域中的光的红色滤色器以及滤色器层上的第三感光装置,并且包括 一对电极彼此面对,以及一对电极之间的光活性层,并且被配置为选择性地吸收绿色波长区域中的光。

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