公开(公告)号：US20180033646A1

公开(公告)日：2018-02-01

申请号：US15730045

申请日：2017-10-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Rahul SHARANGPANI ,  Fumitaka AMANO ,  Raghuveer S. MAKALA ,  Adarsh RAJASHEKHAR ,  Fei ZHOU

IPC: H01L21/443 ,  H01L21/3065 ,  H01L27/108 ,  H01L21/311 ,  H01L27/06 ,  H01L21/768 ,  H01L21/441 ,  H01L29/49 ,  H01L27/105

CPC classification number: H01L27/11563 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/441 ,  H01L21/443 ,  H01L21/76871 ,  H01L27/0688 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/10844 ,  H01L27/11534 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/495 ,  H01L29/4975

Abstract: Word lines for a three-dimensional memory device can be formed by forming a stack of alternating layers comprising insulating layers and sacrificial material layers and memory stack structures vertically extending therethrough. Backside recesses are formed by removing the sacrificial material layers through a backside via trench. A metal silicide layer and metal portion are formed in the backside recesses to form the word lines including a metal portion, a metal silicide layer, and optionally, a silicon-containing layer.