公开(公告)号：US08637932B2

公开(公告)日：2014-01-28

申请号：US13416600

申请日：2012-03-09

申请人： Shingo Eguchi

发明人： Shingo Eguchi

IPC分类号： H01L21/84

CPC分类号： H01L23/562 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3114 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00

摘要： In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.

摘要翻译： 在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中，在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。 通过设置抵抗外部应力的抗冲击层和用于扩散冲击的冲击扩散层，减小了施加到每单位面积的半导体集成电路的力，从而保护了半导体集成电路。 冲击扩散层优选具有低的弹性模量和高的断裂模量。

公开(公告)号：US08432505B2

公开(公告)日：2013-04-30

申请号：US13288099

申请日：2011-11-03

申请人： Kengo Akimoto ,  Noriko Miyagi ,  Shingo Eguchi

发明人： Kengo Akimoto ,  Noriko Miyagi ,  Shingo Eguchi

IPC分类号： G02F1/136

CPC分类号： H01L27/124 ,  H01L27/3244 ,  H01L51/5215

摘要： It is an object of the present invention to provide a display device that has a structure of an electrode where a residue of a transparent conductive film is not generated when a weak acid solution is used in etching, which is particularly appropriate for an electrode of a light-emitting element.A display device according to the present invention has an electrode that has a laminated structure of laminated transparent conductive films, and the electrode has a first transparent conductive film as the bottom layer, where no residue is generated when a weak acid solution is used in etching, and a second transparent conductive film as the top layer, which has a work function of 5.0 eV or more.

摘要翻译： 本发明的目的是提供一种具有电极结构的显示装置，其中当蚀刻中使用弱酸溶液时，不产生透明导电膜的残留物，这特别适用于 发光元件。 根据本发明的显示装置具有具有叠层透明导电膜的叠层结构的电极，并且电极具有作为底层的第一透明导电膜，当在蚀刻中使用弱酸溶液时不产生残留物 ，第二透明导电膜作为顶层，其功函数为5.0eV以上。

公开(公告)号：US20120326145A1

公开(公告)日：2012-12-27

申请号：US13604028

申请日：2012-09-05

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC分类号： H01L33/56

CPC分类号： H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

摘要： An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

摘要翻译： 目的是提供一种非常可靠的发光装置，该发光装置薄且不被外部局部压力损坏。 此外，另一个目的是通过在制造过程中防止由于外部应力引起的形状和特性的缺陷而以高产率制造发光器件。 发光元件被密封在其中纤维体浸渍有机树脂的第一结构体和其中纤维体浸渍有机树脂的第二结构体之间，由此可靠的发光器件是薄的和 可以提供强度。 此外，通过防止制造过程中的形状和特性的缺陷，可以以高产率制造发光器件。

公开(公告)号：US08278160B2

公开(公告)日：2012-10-02

申请号：US13396751

申请日：2012-02-15

申请人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

发明人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： H01L21/302

CPC分类号： H01L29/78624 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

公开(公告)号：US08264144B2

公开(公告)日：2012-09-11

申请号：US12500247

申请日：2009-07-09

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC分类号： H01J1/62

CPC分类号： H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

摘要： An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

摘要翻译： 目的是提供一种非常可靠的发光装置，该发光装置薄且不被外部局部压力损坏。 此外，另一个目的是通过在制造过程中防止由于外部应力引起的形状和特性的缺陷而以高产率制造发光器件。 发光元件被密封在其中纤维体浸渍有机树脂的第一结构体和其中纤维体浸渍有机树脂的第二结构体之间，由此可靠的发光器件是薄的和 可以提供强度。 此外，通过防止制造过程中的形状和特性的缺陷，可以以高产率制造发光器件。

公开(公告)号：US08169588B2

公开(公告)日：2012-05-01

申请号：US12498589

申请日：2009-07-07

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada

IPC分类号： G02F1/1333

CPC分类号： G02F1/133305 ,  G02F2201/503 ,  G02F2202/22

摘要： A flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is provided. A method for manufacturing, with high yield, a flexible and highly reliable liquid crystal display device which is not easily damaged even if subjected to external pressure is also provided. A liquid crystal display device including a first structure body including a first fibrous body and a first organic resin, a second structure body including a second fibrous body and a second organic resin, a liquid crystal interposed between the first and second structure bodies, and a seal member for fixing the first and second structure bodies and for enclosing the liquid crystal. The first and second fibrous bodies are impregnated with the first and second organic resins, respectively, and the first structure body and the second structure body are in contact with each other.

摘要翻译： 提供了即使受到外部压力也不容易损坏的柔性且高度可靠的液晶显示装置。 也提供了即使经受外部压力也不容易损坏的柔性高可靠性液晶显示装置的制造方法。 一种液晶显示装置，包括：第一结构体，包括第一纤维体和第一有机树脂;第二结构体，包括第二纤维体和第二有机树脂;液晶，介于所述第一和第二结构体之间， 用于固定第一和第二结构体并封闭液晶的密封构件。 第一和第二纤维体分别浸渍有第一和第二有机树脂，并且第一结构体和第二结构体彼此接触。

公开(公告)号：US08143708B2

公开(公告)日：2012-03-27

申请号：US12564637

申请日：2009-09-22

申请人： Yoshiaki Oikawa ,  Shingo Eguchi

发明人： Yoshiaki Oikawa ,  Shingo Eguchi

IPC分类号： H01L23/60 ,  H01L23/02

CPC分类号： H01L23/295 ,  H01L23/3107 ,  H01L23/60 ,  H01L23/645 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

摘要： An object is to provide a thin and small semiconductor device that has high reliability and high resistance to external stress and electrostatic discharge. Another object is to manufacture a semiconductor device with high yield while shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process. A conductive shield covering a semiconductor integrated circuit prevents electrostatic breakdown (malfunction of the circuit or damage to a semiconductor element) of the semiconductor integrated circuit due to electrostatic discharge. By providing an antenna on the external side of the conductive shield, a sufficient communication capability is secured. With the use of a pair of insulators which sandwich the semiconductor integrated circuit, a thin and small semiconductor device that has resistance properties and high reliability can be provided. Further, shape defects and defective characteristics which are caused by external stress or electrostatic discharge are prevented in the manufacturing process, so that a semiconductor device can be manufactured with high yield.

摘要翻译： 本发明的目的是提供一种具有高可靠性和高外部应力和静电放电性能的薄而小的半导体器件。 另一个目的是制造高产率的半导体器件，同时在制造过程中防止由外部应力或静电放电引起的形状缺陷和缺陷特性。 覆盖半导体集成电路的导电屏蔽防止由于静电放电而导致的半导体集成电路的静电击穿（电路的故障或半导体元件的损坏）。 通过在导电屏蔽的外侧设置天线，确保足够的通信能力。 通过使用夹在半导体集成电路中的一对绝缘体，可以提供具有电阻特性和高可靠性的薄型和小型半导体器件。 此外，在制造过程中防止由外部应力或静电放电引起的形状缺陷和缺陷特性，从而可以高产率制造半导体器件。

公开(公告)号：US08134157B2

公开(公告)日：2012-03-13

申请号：US12878221

申请日：2010-09-09

申请人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

发明人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： H01L33/00

CPC分类号： H01L29/78624 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

公开(公告)号：US08058083B2

公开(公告)日：2011-11-15

申请号：US12619776

申请日：2009-11-17

申请人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Masahiro Katayama ,  Ami Nakamura ,  Yohei Monma

发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Masahiro Katayama ,  Ami Nakamura ,  Yohei Monma

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L21/32134 ,  H01L27/1214

摘要： It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.

摘要翻译： 本发明的一个实施例的目的是当半导体元件变得柔性时进行分离而不损坏半导体元件。 此外，本发明的一个实施方案的另一个目的是提供一种削弱分离层和缓冲层之间粘附性的技术。 此外，本发明的一个实施例的另一个目的是提供一种用于防止由于分离而在半导体元件上产生弯曲应力的技术。 通过使用蚀刻剂溶解分离层来分离形成在分离层上的缓冲层之间的半导体元件。 或者，通过与蚀刻剂接触并将膜沿朝向分离层不溶解的区域的方向移动而将膜插入到分离层溶解的区域中进行分离。

公开(公告)号：US08048770B2

公开(公告)日：2011-11-01

申请号：US12232036

申请日：2008-09-10

申请人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

发明人： Shingo Eguchi ,  Yohei Monma ,  Atsuhiro Tani ,  Misako Hirosue ,  Kenichi Hashimoto ,  Yasuharu Hosaka

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/322 ,  H01L21/20 ,  H01L21/36 ,  H01G9/20

CPC分类号： H01L21/67132 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/67092 ,  H01L21/707 ,  H01L27/1266

摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.