公开(公告)号：US20110003430A1

公开(公告)日：2011-01-06

申请号：US12828468

申请日：2010-07-01

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC分类号： H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/1225

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.

摘要翻译： 本发明的目的是提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在制造包括薄膜晶体管的半导体器件的方法中，其中氧化物半导体膜用于包括沟道形成区域的半导体层，在形成氧化物半导体膜之前，存在于栅极绝缘层中的诸如水分的杂质减少 ，然后进行热处理（脱水或脱氢的热处理），以提高氧化物半导体膜的纯度并减少诸如水分的杂质。 之后，在氧气氛中进行缓慢冷却。 除了存在于栅极绝缘层和氧化物半导体膜中的杂质等杂质以外，氧化物半导体膜与与其接触的上下膜之间的界面处存在的诸如水分的杂质减少。

公开(公告)号：US20100244020A1

公开(公告)日：2010-09-30

申请号：US12722795

申请日：2010-03-12

申请人： Junichiro SAKATA ,  Hideyuki KISHIDA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

发明人： Junichiro SAKATA ,  Hideyuki KISHIDA ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/7869 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0297 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66969 ,  H01L29/78618

摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.

摘要翻译： 本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。 半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区 电极层。 源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。

公开(公告)号：US20100163867A1

公开(公告)日：2010-07-01

申请号：US12644286

申请日：2009-12-22

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA

IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L21/336 ,  H01L21/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78696

摘要： In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.

摘要翻译： 在包括氧化物半导体的薄膜晶体管中，在氧化物半导体层和栅极绝缘层之间形成具有比氧化物半导体层更高导电性的氧化物簇，由此可以增加薄膜晶体管的场效应迁移率并增加 关闭电流可以抑制。

公开(公告)号：US20100117073A1

公开(公告)日：2010-05-13

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US20100102312A1

公开(公告)日：2010-04-29

申请号：US12581200

申请日：2009-10-19

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Shunichi ITO ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Shunichi ITO ,  Junichiro SAKATA

IPC分类号： H01L29/786 ,  H01L29/12 ,  H01L33/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78618

摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。

公开(公告)号：US20120319108A1

公开(公告)日：2012-12-20

申请号：US13602393

申请日：2012-09-04

申请人： Junichiro SAKATA ,  Hiromichi GODO ,  Takashi SHIMAZU

发明人： Junichiro SAKATA ,  Hiromichi GODO ,  Takashi SHIMAZU

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78669 ,  H01L29/78696

摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

摘要翻译： 为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。 此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层， 不提供硅层。

公开(公告)号：US20120286256A1

公开(公告)日：2012-11-15

申请号：US13552899

申请日：2012-07-19

申请人： Yuji IWAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takaaki NAGATA ,  Takahiro KAWAKAMI ,  Satoshi SEO ,  Ryoji NOMURA

发明人： Yuji IWAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takaaki NAGATA ,  Takahiro KAWAKAMI ,  Satoshi SEO ,  Ryoji NOMURA

IPC分类号： H01L51/54

CPC分类号： H01L51/5048 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0072 ,  H01L51/0081

摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.

摘要翻译： 本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。 另一个目的是通过使用发光元件来提供具有低功耗的发光装置。 另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。 发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二 如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。

公开(公告)号：US20120280225A1

公开(公告)日：2012-11-08

申请号：US13455476

申请日：2012-04-25

申请人： Junichiro SAKATA

发明人： Junichiro SAKATA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1156 ,  H01L28/40

摘要： An oxide semiconductor is used for a semiconductor layer of a transistor included in a semiconductor device, whereby leakage current between a source and a drain can be reduced, so that reduction in power consumption of a semiconductor device and a memory device including the semiconductor device and an improvement in characteristics of retaining stored data (electric charge) in the semiconductor device and the memory device can be achieved. Further, a drain electrode of the transistor, the semiconductor layer, and a first electrode which overlaps with the drain electrode form a capacitor, and a gate electrode is led to an overlying layer at a position which overlaps with the capacitor. Thus, the semiconductor device and the memory device including the semiconductor device can be miniaturized.

摘要翻译： 氧化物半导体被用于半导体器件中包括的晶体管的半导体层，由此可以减小源极与漏极之间的漏电流，从而降低半导体器件和包括半导体器件和存储器件的存储器件的功耗 可以实现在半导体器件和存储器件中保持存储数据（电荷）的特性的改进。 此外，晶体管的漏电极，半导体层和与漏电极重叠的第一电极形成电容器，并且在与电容器重叠的位置处将栅电极引导到上覆层。 因此，可以使包括半导体器件的半导体器件和存储器件小型化。

公开(公告)号：US20120241812A1

公开(公告)日：2012-09-27

申请号：US13478547

申请日：2012-05-23

申请人： Hisao IKEDA ,  Junichiro SAKATA

发明人： Hisao IKEDA ,  Junichiro SAKATA

IPC分类号： H01L33/40

CPC分类号： H01L51/5088 ,  H01L51/5048

摘要： A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

摘要翻译： 公开了一种可以在低驱动电压下驱动并且比常规发光元件具有更长寿命的发光元件，并且公开了一种用于制造发光元件的方法。 所公开的发光元件包括一对电极之间的多个层; 并且所述多个层中的至少一层包含选自氧化物半导体和金属氧化物的一种化合物和具有高空穴传输性的化合物。 这样的发光元件可以抑制含有选自氧化物半导体和金属氧化物的一种化合物的层和具有高空穴传输性的化合物的层的结晶。 结果，可以延长发光元件的寿命。

公开(公告)号：US20110108864A1

公开(公告)日：2011-05-12

申请号：US13009111

申请日：2011-01-19

申请人： Satoshi SEO ,  Daisuke KUMAKI ,  Hisao IKEDA ,  Junichiro SAKATA

发明人： Satoshi SEO ,  Daisuke KUMAKI ,  Hisao IKEDA ,  Junichiro SAKATA

IPC分类号： H01L27/15

CPC分类号： H01L27/156 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/0059 ,  H01L51/0071 ,  H01L51/0081 ,  H01L51/5088 ,  H01L2251/5315 ,  H01L2251/558

摘要： Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.

摘要翻译： 发光元件具有由于发光元件内的散射光或反射光而导致其光提取效率低的问题。 需要通过新的方法来增强发光元件的光提取效率。 根据本发明，发光元件包括第一层产生孔，包括用于每种发射颜色的发光层的第二层和在阳极和阴极之间产生电子的第三层，以及第一层 层根据每个发射颜色的包含发光层的各层而不同。 使用其中混合有机化合物和金属氧化物的层作为第一层，因此即使当厚度增加时驱动电压也不会增加，这是优选的。