公开(公告)号：US20100117073A1

公开(公告)日：2010-05-13

申请号：US12612021

申请日：2009-11-04

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

摘要翻译： 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US20110070693A1

公开(公告)日：2011-03-24

申请号：US12888846

申请日：2010-09-23

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC分类号： H01L21/34 ,  C23C14/34

CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US20110068336A1

公开(公告)日：2011-03-24

申请号：US12888835

申请日：2010-09-23

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC分类号： H01L29/26 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

摘要翻译： 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

公开(公告)号：US20100163874A1

公开(公告)日：2010-07-01

申请号：US12641446

申请日：2009-12-18

申请人： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L27/06

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US20100109058A1

公开(公告)日：2010-05-06

申请号：US12609032

申请日：2009-10-30

申请人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

发明人： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC分类号： H01L29/78 ,  H01B1/06 ,  B05D5/12 ,  C23C14/34

CPC分类号： C23C14/5846 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  C23C14/0057 ,  C23C14/0676 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.

摘要翻译： 使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。 在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。 本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。 发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

公开(公告)号：US20100294535A1

公开(公告)日：2010-11-25

申请号：US12781894

申请日：2010-05-18

申请人： Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Takayuki SAITO ,  Yuki IMOTO ,  Noriaki UTO ,  Yuta ENDO ,  Hitomi SHIONOYA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI

发明人： Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Takayuki SAITO ,  Yuki IMOTO ,  Noriaki UTO ,  Yuta ENDO ,  Hitomi SHIONOYA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI

IPC分类号： H01B5/00 ,  C23C14/34

CPC分类号： H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

摘要翻译： 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US20120231580A1

公开(公告)日：2012-09-13

申请号：US13413684

申请日：2012-03-07

申请人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

IPC分类号： H01L21/42

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

公开(公告)号：US20130069055A1

公开(公告)日：2013-03-21

申请号：US13608044

申请日：2012-09-10

申请人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Hiromachi GODO ,  Takehisa HATANO ,  Sachiaki TEZUKA ,  Suguru HONDO ,  Naoto YAMADE ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Atsuo ISOBE ,  Hiromachi GODO ,  Takehisa HATANO ,  Sachiaki TEZUKA ,  Suguru HONDO ,  Naoto YAMADE ,  Junichi KOEZUKA

IPC分类号： H01L29/78

CPC分类号： H01L29/41733 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.

摘要翻译： 提供一种半导体器件，其中提供氧化物半导体层; 设置有栅极电极层的一对布线层电连接到低电阻区域; 并且电极层设置成与低电阻区域接触，在形成布线层的区域之下。

公开(公告)号：US20110212569A1

公开(公告)日：2011-09-01

申请号：US13029148

申请日：2011-02-17

申请人： Shunpei YAMAZAKI ,  Junichi KOEZUKA

发明人： Shunpei YAMAZAKI ,  Junichi KOEZUKA

IPC分类号： H01L21/16

CPC分类号： H01L21/385 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.

摘要翻译： 在包括氧化物半导体层的晶体管中，形成与氧化物半导体层接触的氧化物绝缘层。 然后，通过氧化物绝缘层将氧引入（添加）到氧化物半导体层，并进行热处理。 通过氧气引入和热处理的这些步骤，有意地从氧化物半导体层除去诸如氢，水分，羟基或氢化物的杂质，使得氧化物半导体层被高度纯化。

公开(公告)号：US20140139775A1

公开(公告)日：2014-05-22

申请号：US14077390

申请日：2013-11-12

申请人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

发明人： Hiroyuki MIYAKE ,  Shunpei YAMAZAKI ,  Yoshifumi TANADA ,  Manabu SATO ,  Toshinari SASAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Takuya MATSUO ,  Hiroshi MATSUKIZONO ,  Yosuke KANZAKI ,  Shigeyasu MORI

IPC分类号： G02F1/1368 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。