公开(公告)号：US07247506B2

公开(公告)日：2007-07-24

申请号：US11389281

申请日：2006-03-27

申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

IPC分类号： H01L21/00

CPC分类号： G11C11/15 ,  Y10T29/49021

摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

摘要翻译： 提供了一种对于写入线具有小的开关电流并且其变化小的磁存储器件。 一种制造这种磁存储器件的方法包括：形成磁阻效应元件; 形成第一绝缘膜以覆盖磁阻效应元件; 形成涂膜以覆盖第一绝缘膜; 暴露磁阻效应元件的顶面; 在磁阻效应元件上形成上部写入线; 通过去除一部分或全部涂膜，将第一绝缘膜暴露在磁阻效应元件的侧面上; 以及形成轭结构件，以便覆盖上部书写线的至少一个侧面部分，以便与该磁阻效应元件侧面上暴露的第一绝缘膜接触。

公开(公告)号：US07245524B2

公开(公告)日：2007-07-17

申请号：US11255111

申请日：2005-10-21

申请人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

发明人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.

摘要翻译： 一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件， 具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层， 第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

公开(公告)号：US07072152B2

公开(公告)日：2006-07-04

申请号：US11078439

申请日：2005-03-14

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

摘要翻译： 提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统 。 MR元件的有源区域由感测电流流过的部分的面积定义。 此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号 活跃区域。 当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。 期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

公开(公告)号：US07042762B2

公开(公告)日：2006-05-09

申请号：US11118443

申请日：2005-05-02

申请人： Shiho Nakamura ,  Shigeru Haneda ,  Hiroaki Yoda

发明人： Shiho Nakamura ,  Shigeru Haneda ,  Hiroaki Yoda

IPC分类号： G11C11/15

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3263 ,  H01F10/329 ,  H01L27/228

摘要： A magnetic element, including a first magnetic reference part (a) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.

摘要翻译： 一种磁性元件，包括第一磁性参考部分（a），其包括基本上沿第一方向被钉扎在磁化（M 1）中的第一铁磁性物质，第二磁性参考部分（E），包括在磁化中被钉扎的第二铁磁性物质（M 3 ）和设置在第一和第二磁性参考部分之间的磁记录部分（C）。 磁记录部分包括第三铁磁物质。 自旋转移中间部分（B）设置在第一磁参考部分和磁记录部分之间。 中间部分（D）设置在第二磁参考部分和磁记录部分之间。 第三铁磁性物质的磁化强度（M 2）可以通过使第一磁性参考部件和磁性记录部件之间的写入电流通过而在与第一方向平行或反平行的方向上被引导。 可以通过在第二磁参考部分和磁记录部分之间通过感测电流来检测第二方向与第三铁磁物质的磁化方向之间的相对关系。

公开(公告)号：US07009873B2

公开(公告)日：2006-03-07

申请号：US10796063

申请日：2004-03-10

申请人： Hiroaki Yoda ,  Tatsuya Kishi ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Tatsuya Kishi ,  Junichi Miyamoto

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A magnetic random access memory in which “0” data and “1” data are associated with resistance values of a non-magnetic layer of a magnetoresistive element, the resistance values being variable depending on orientation of magnetization of a magnetic free layer and a magnetic pinned layer which sandwich the non-magnetic layer, and current is let to flow to first and second write current paths, which are provided close to the magnetoresistive element and are separated from each other, thereby producing a composite write magnetic field, changing a direction of magnetization of the free layer, wherein the first write current path includes a channel region of an insulated-gate transistor that is disposed close to the free layer, and the transistor is controlled such that a channel current with a desired magnitude flows in the transistor.

摘要翻译： 磁性随机存取存储器，其中“0”数据和“1”数据与磁阻元件的非磁性层的电阻值相关联，电阻值根据磁性层的磁化方向和磁性 夹着非磁性层的被钉扎层，使电流流到靠近磁阻元件设置的第一和第二写入电流路径，并且彼此分离，从而产生复合写入磁场，改变方向 的自由层的磁化，其中第一写入电流路径包括靠近自由层设置的绝缘栅晶体管的沟道区，并且控制晶体管使得具有期望幅度的沟道电流在晶体管中流动 。

公开(公告)号：US06960815B2

公开(公告)日：2005-11-01

申请号：US10379656

申请日：2003-03-06

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US20050207216A1

公开(公告)日：2005-09-22

申请号：US10933323

申请日：2004-09-03

申请人： Yoshiaki Fukuzumi ,  Hiroaki Yoda

发明人： Yoshiaki Fukuzumi ,  Hiroaki Yoda

IPC分类号： H01L27/105 ,  G11C11/00 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

CPC分类号： G11C11/15 ,  H01L27/228

摘要： A semiconductor integrated circuit device includes a magneto-resistive effect element and a plug. The magneto-resistive effect element includes a first magnetic layer whose magnetization direction is fixed and a second magnetic layer whose magnetization direction can be changed. The plug is formed to penetrate through the second magnetic layer in the film thickness direction of the second magnetic layer and used to apply a write magnetic field to the second magnetic layer.

摘要翻译： 半导体集成电路器件包括磁阻效应元件和插头。 磁阻效应元件包括其磁化方向固定的第一磁性层和其磁化方向可改变的第二磁性层。 插塞形成为在第二磁性层的膜厚度方向上穿过第二磁性层，并用于向第二磁性层施加写入磁场。

公开(公告)号：US06927468B2

公开(公告)日：2005-08-09

申请号：US10379915

申请日：2003-03-06

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Junichi Miyamoto ,  Tatsuya Kishi ,  Minoru Amano ,  Takeshi Kajiyama ,  Hisanori Aikawa

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Junichi Miyamoto ,  Tatsuya Kishi ,  Minoru Amano ,  Takeshi Kajiyama ,  Hisanori Aikawa

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L29/82

CPC分类号： G11C11/16

摘要： A write line is covered with a yoke material. The recording layer of an MTJ element is exchange-coupled to the yoke material. The total magnetic volume ΣMsi×ti of the recording layer of the MTJ element and a portion of the yoke material that is exchange-coupled to the recording layer is smaller than the magnetic volume ΣMsi′×ti′ of the remaining portion of the yoke material that covers the write line.

摘要翻译： 写线用轭材料覆盖。 MTJ元件的记录层与磁轭材料交换耦合。 MTJ元件的记录层的总磁体体积SigmaMsixti和与记录层交换耦合的磁轭材料的一部分小于磁轭材料的剩余部分的磁体积SigmaMsi'xti' 写行。

公开(公告)号：US06873023B2

公开(公告)日：2005-03-29

申请号：US10418047

申请日：2003-04-18

申请人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G11C11/16 ,  H01L43/00

CPC分类号： G11C11/16

摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.

摘要翻译： 写字线被放置在MTJ元素的正下方。 写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。 数据选择线（读/写位线）设置在MTJ元件上。 数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。 在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

公开(公告)号：US06831857B2

公开(公告)日：2004-12-14

申请号：US10329417

申请日：2002-12-27

申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

IPC分类号： G11C1115

CPC分类号： G11C11/15

摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.