公开(公告)号：US5264077A

公开(公告)日：1993-11-23

申请号：US970541

申请日：1992-11-02

申请人： Takashi Fukui ,  Naoya Sakamoto ,  Takeshi Fukada

发明人： Takashi Fukui ,  Naoya Sakamoto ,  Takeshi Fukada

IPC分类号： G02F1/1343 ,  H01L31/105 ,  H01L31/18 ,  B44C1/22 ,  C23F1/00

CPC分类号： G02F1/13439 ,  H01L31/1055 ,  H01L31/1884 ,  Y02E10/50

摘要： A conductive oxide film is formed on a substrate at a low temperature. The formed conductive oxide film is not very dense because of the low temperature. Therefore the formed conductive oxide film can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100.degree.-400.degree. C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.

摘要翻译： 在低温下在基板上形成导电氧化膜。 形成的导电氧化膜由于温度低而不是非常致密的。 因此，可以通过蚀刻能力弱的蚀刻剂容易地蚀刻形成的导电氧化物膜。 并且通过蚀刻产生所形成的导电氧化物膜的图案。 图案化的导电氧化物膜在100-400℃的温度范围内被氧化。以这种方式，在本发明的方法中，比传统方法在较短的时间内产生导电氧化物图案，并且导电氧化物 通过本发明的方法制造的图案具有与通过常规方法制造的导电氧化物图案几乎相同的电阻率，并且具有改进的图案边缘和改进的再现性。

公开(公告)号：US5103321A

公开(公告)日：1992-04-07

申请号：US283823

申请日：1988-12-13

申请人： Nobumitsu Amachi ,  Toshiji Hamatani ,  Takeshi Fukada ,  Mitsunri Sakama ,  Naoya Sakamoto ,  Mitsufumi Codama

发明人： Nobumitsu Amachi ,  Toshiji Hamatani ,  Takeshi Fukada ,  Mitsunri Sakama ,  Naoya Sakamoto ,  Mitsufumi Codama

IPC分类号： H04N1/19 ,  H04N1/40

CPC分类号： H04N1/40056

摘要： An image sensor is described. The sensor comprises a sensor array and an alternating electric power supply. The frequency of the power supply is selected to be equal to or a multiple of the frequency at which the sensor array is scanned.

公开(公告)号：US4812415A

公开(公告)日：1989-03-14

申请号：US82115

申请日：1987-08-06

申请人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

发明人： Shunpei Yamazaki ,  Kunio Suzuki ,  Mikio Kinka ,  Takeshi Fukada ,  Masayoshi Abe ,  Ippei Kobayashi ,  Katsuhiko Shibata ,  Masato Susukida ,  Susumu Nagayama ,  Kaoru Koyanagi

IPC分类号： H01L27/142 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/208 ,  H01L31/02021 ,  H01L31/02167 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29 ,  Y10S438/94

摘要： An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.

摘要翻译： 公开了一种改进的半导体器件，其由于针孔或其它间隙而没有电流泄漏。 还示出了用于处理半导体器件的改进方法。 根据本发明，在电极沉积之前，半导体层的制造过程中产生的间隙被绝缘体填充。 由于这种结构，当在半导体层上设置电极时，不会产生短路电流。