公开(公告)号：US5712505A

公开(公告)日：1998-01-27

申请号：US569942

申请日：1995-12-08

申请人： Shunji Nakamura

发明人： Shunji Nakamura

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/732 ,  H01L29/70 ,  H01L29/739

CPC分类号： H01L29/66272 ,  Y10S148/01 ,  Y10S148/011

摘要： A ring-shaped emitter region is formed either in a region a little toward an inner periphery or in a region a little toward an outer periphery in an upper layer portion of a ring-shaped base region of a bipolar transistor. A conductive layer is laminated through an insulating layer in a region surrounded by the ring-shaped emitter region provided a little toward the inner periphery of the base region, a conductive side wall is formed on the sides of the conductive layer and the insulating layer, and the ring-shaped emitter region and the conductive layer are connected through the conductive side wall. A metallic emitter electrode is connected to the conductive layer. On the other hand, in a region surrounded by the ring-shaped base region in which the ring-shaped emitter region is formed a little toward the outer periphery, a conductive layer is laminated through an insulating layer, a conductive side wall is formed on the sides of the conductive layer and the insulating layer, and the ring-shaped base region and the conductive layer are connected through the conductive side wall. A metallic base electrode is connected to the conductive layer. Since an emitter region and a collector region have the same conduction type in a bipolar transistor, such a bipolar transistor that has a construction in which the emitter described above is used as a collector is also available.

摘要翻译： 在双极型晶体管的环状基极区域的上层部分的内周部分或稍微朝向外周的区域中形成环状发射极区域。 导电层通过绝缘层层叠在由基部区域的内周稍微设置的环状发射极区域围绕的区域中，在导电层和绝缘层的侧面形成导电性侧壁， 并且环形发射极区域和导电层通过导电侧壁连接。 金属发射极连接到导电层。 另一方面，在由环状的发射极区域朝向外周形成一点的环状基极区域围绕的区域中，导电层通过绝缘层层叠，导电侧壁形成在 导电层和绝缘层的侧面以及环状基极区域和导电层通过导电侧壁连接。 金属基极连接到导电层。 由于发射极区域和集电极区域在双极晶体管中具有相同的导电类型，所以具有其中使用上述发射极的结构的双极晶体管也可用作集电极。

公开(公告)号：US5464964A

公开(公告)日：1995-11-07

申请号：US986788

申请日：1992-12-08

申请人： Kouichi Okuda ,  Shunji Nakamura ,  Toshio Yoshimoto ,  Yasumasa Ohtsuka ,  Yohji Tomoyuki ,  Daizo Fukuzawa ,  Tomoko Nanbu ,  Hidenobu Suzuki

发明人： Kouichi Okuda ,  Shunji Nakamura ,  Toshio Yoshimoto ,  Yasumasa Ohtsuka ,  Yohji Tomoyuki ,  Daizo Fukuzawa ,  Tomoko Nanbu ,  Hidenobu Suzuki

IPC分类号： G03G15/20 ,  H05B1/02

CPC分类号： G03G15/2003 ,  G03G15/2039 ,  G03G15/2046 ,  G03G2215/2016 ,  G03G2215/2035 ,  G03G2215/2038

摘要： An image heating apparatus includes a heater; temperature detector for detecting a temperature of the heater; electric power supply controller for controlling electric power supply to the heater during image heating, so that the temperature detector detects a predetermined set temperature; and a temperature determining device for determining the set temperature on the basis of a change of the temperature detected by the temperature detector when electric power supply to the heater is stopped.

摘要翻译： 图像加热装置包括加热器; 温度检测器，用于检测加热器的温度; 电源控制器，用于在图像加热期间控制对加热器的电力供应，使得温度检测器检测到预定的设定温度; 以及温度确定装置，用于当停止对加热器的电力供应时，基于由温度检测器检测到的温度的变化来确定设定温度。

公开(公告)号：US5439832A

公开(公告)日：1995-08-08

申请号：US190463

申请日：1994-02-02

申请人： Shunji Nakamura

发明人： Shunji Nakamura

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L29/08 ,  H01L29/417 ,  H01L29/73 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L29/66606 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/66272 ,  H01L2924/0002

摘要： Semiconductor-device fabricating steps include the steps of forming a first conducting film serving as an electrode on a substratum semiconductor layer through an insulating film, forming an opening in partial regions of the first conducting film and the insulating film, and thereafter forming a second conducting film for connecting the first conducting film with the substratum semiconductor layer on the inner periphery or in the vicinity of the opening, then forming a second electrode in the opening through an insulating side wall, moreover patterning the first conducting film before selectively etching and removing the insulating film under the first conducting film, and thereby forming a space between the first conducting film and the substratum semiconductor layer. Moreover, the semiconductor-device fabrication steps include the steps of patterning the first insulating film and first conducting film formed in order on the substratum semiconductor layer to from an electrode made of the first conducting film, thereafter covering the whole with a second insulating film, then patterning the second insulating film to form an opening in a region including an electrode, selectively etching and removing the first insulating film under the electrode through the opening, and thereby forming a space between the electrode and substratum semiconductor layer.

摘要翻译： 半导体器件制造步骤包括以下步骤：通过绝缘膜在基底半导体层上形成用作电极的第一导电膜，在第一导电膜和绝缘膜的局部区域中形成开口，然后形成第二导电 用于将第一导电膜与在开口的内周或开口附近的基底半导体层连接，然后通过绝缘侧壁在开口中形成第二电极，此外在选择性蚀刻和去除之前图案化第一导电膜 在第一导电膜下面形成绝缘膜，从而在第一导电膜和基底半导体层之间形成空间。 此外，半导体器件制造步骤包括以下步骤：将基底半导体层上依次形成的第一绝缘膜和第一导电膜图案化为由第一导电膜制成的电极，然后用第二绝缘膜覆盖整个步骤， 然后对第二绝缘膜进行构图以在包括电极的区域中形成开口，通过开口选择性地蚀刻和去除电极下面的第一绝缘膜，从而在电极和基底半导体层之间形成空间。

公开(公告)号：US5420671A

公开(公告)日：1995-05-30

申请号：US196803

申请日：1994-02-15

申请人： Hiroki Kisu ,  Toshio Miyamoto ,  Yohji Tomoyuki ,  Junji Araya ,  Shunji Nakamura ,  Masanobu Saito

发明人： Hiroki Kisu ,  Toshio Miyamoto ,  Yohji Tomoyuki ,  Junji Araya ,  Shunji Nakamura ,  Masanobu Saito

IPC分类号： G03G15/02

CPC分类号： G03G15/0216 ,  G03G15/0266

摘要： A charging device contactable to a member in order to charge it electrically. The voltage of the charging member includes an AC component. A controller controls the AC component so as to be a constant current, by which the member to be charged can be stably and uniformly charged even if ambient conditions change.

摘要翻译： 一个充电装置，可与一个构件接触，以便对其进行电荷充电。 充电构件的电压包括AC分量。 控制器将AC分量控制成恒定电流，即使环境条件改变，被充电元件也能够被稳定均匀充电。

公开(公告)号：US5367189A

公开(公告)日：1994-11-22

申请号：US971235

申请日：1992-11-04

申请人： Shunji Nakamura

发明人： Shunji Nakamura

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/04 ,  H01L21/20 ,  H01L21/336 ,  H01L29/73 ,  H01L29/772 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/808 ,  H01L39/22 ,  H01L23/48 ,  H01L27/00 ,  H01L29/40 ,  H01L49/02

CPC分类号： H01L29/66068 ,  H01L21/2007 ,  H01L29/7317 ,  H01L29/7722 ,  H01L29/78642 ,  H01L29/8083 ,  H01L2924/0002 ,  Y10S148/15 ,  Y10S438/931

摘要： A semiconductor device comprises a first electrode buried in one main face of a substrate and surrounded by a first insulator, a field oxide film covering the surface of the first electrode, a semiconductor layer connected with the first electrode, a second insulator covering the surface of the semiconductor layer, a second electrode connected with the semiconductor layer, a gate electrode connected with the semiconductor layer between the second insulator and the field oxide film, and an outgoing electrode connected with the first electrode.

摘要翻译： 半导体器件包括：第一电极，其被埋置在基板的一个主面内并由第一绝缘体包围，覆盖第一电极的表面的场氧化膜，与第一电极连接的半导体层，覆盖第一绝缘体的表面的第二绝缘体 半导体层，与半导体层连接的第二电极，与第二绝缘体和场氧化物膜之间的半导体层连接的栅电极，以及与第一电极连接的输出电极。

公开(公告)号：US5210438A

公开(公告)日：1993-05-11

申请号：US809044

申请日：1991-12-16

申请人： Shunji Nakamura

发明人： Shunji Nakamura

IPC分类号： H01L21/02 ,  H01L21/329 ,  H01L21/336

CPC分类号： H01L28/20 ,  H01L29/66166 ,  H01L29/66757

摘要： A semiconductor resistance element of one electrical conduction type comprises: a semiconductor region including a first impurity of opposite electrical conduction type and second impurity of one electrical conduction type, wherein said second impurity is more heavily introduced so that a predetermined resistance is obtained; and electrode regions provided on both ends of said semiconductor region.

摘要翻译： 一种导电型的半导体电阻元件包括：包括具有相反导电类型的第一杂质和一种导电类型的第二杂质的半导体区域，其中所述第二杂质被更多地引入以获得预定的电阻; 以及设置在所述半导体区域的两端的电极区域。

公开(公告)号：US4391891A

公开(公告)日：1983-07-05

申请号：US380391

申请日：1982-05-20

申请人： Yasuyuki Tamura ,  Junichiro Kanbe ,  Shunji Nakamura ,  Tsutomu Toyono ,  Tohru Takahashi

发明人： Yasuyuki Tamura ,  Junichiro Kanbe ,  Shunji Nakamura ,  Tsutomu Toyono ,  Tohru Takahashi

IPC分类号： G03G9/08 ,  G03G9/083 ,  G03G13/08 ,  G03G15/06 ,  G03G15/08 ,  G03G15/09 ,  G03G13/09

CPC分类号： G03G15/0907 ,  G03G15/0914

摘要： A developing method which comprises causing a layer of field-dependent developer which is supported on a supporting member and whose volume resistivity is 10.sup.12 .OMEGA..multidot.cm under an electric field of 30000 V/cm to be proximate to the surface of an image bearing member bearing a latent image thereon, and applying an AC voltage to between the substrate of the latent image bearing member and the developer supporting member to thereby effect development, and an apparatus therefor.

摘要翻译： 一种显影方法，其包括在30000V / cm 3的电场下使支撑在支撑构件上并且其体积电阻率为1012欧米亚×厘米的场依赖性显影剂层靠近图像承载构件的表面 在其上形成潜像，并且将AC电压施加到潜像承载部件的基板和显影剂支撑部件之间，从而进行显影，及其装置。

公开(公告)号：US4363861A

公开(公告)日：1982-12-14

申请号：US124913

申请日：1980-02-26

申请人： Shunji Nakamura ,  Junichiro Kanbe ,  Tsutomu Toyono ,  Tohru Takahashi ,  Yasuyuki Tamura

发明人： Shunji Nakamura ,  Junichiro Kanbe ,  Tsutomu Toyono ,  Tohru Takahashi ,  Yasuyuki Tamura

IPC分类号： G03G13/09 ,  G03G15/09 ,  G03G13/08

CPC分类号： G03G15/0907 ,  G03G13/09 ,  Y10S204/08

摘要： The present invention provides a developing method for rendering a latent image supported on an image bearing member visible, and an apparatus therefor, in which a developer supporting member supporting thereon spherical granular developer prepared in substantially spherical form by a flow coater process or a spray drying process is maintained in opposed relation to an electrostatic image bearing member having a backing electrode so that the surface of the image bearing member and the developer on the developer supporting member are maintained in a mutually contact-free state, and an alternating voltage is applied to the developer supporting member to cause reciprocating motion of the developer in the developing area between the developer supporting member and the image bearing member.

摘要翻译： 本发明提供了一种用于使支撑在可见图像承载部件上的潜像的显影方法及其装置，其中通过流动涂布机工艺或喷雾干燥将支撑在基本上为球形的球形颗粒状显影剂上的显影剂支撑部件 工艺与具有背衬电极的静电图像承载部件保持相对关系，使得图像承载部件和显影剂支撑部件上的显影剂的表面保持在相互接触的状态，并且交流电压施加到 所述显影剂支撑构件在显影剂支撑构件和图像承载构件之间的显影区域中引起显影剂的往复运动。

公开(公告)号：US4265197A

公开(公告)日：1981-05-05

申请号：US124910

申请日：1980-02-26

申请人： Tsutomu Toyono ,  Shunji Nakamura ,  Junichiro Kanbe ,  Yasuyuki Tamura ,  Tohru Takahashi

发明人： Tsutomu Toyono ,  Shunji Nakamura ,  Junichiro Kanbe ,  Yasuyuki Tamura ,  Tohru Takahashi

IPC分类号： G03G15/06 ,  G03G13/09 ,  G03G15/09

CPC分类号： G03G15/0907

摘要： A developing method and apparatus in which a developer supporting member is opposed to a latent image bearing member with a clearance therebetween and developer is caused to be transferred from the developer supporting member to the latent image bearing member to effect development and wherein a first and a second developing portion are provided as the developer supporting member, these effect development in the named order to complete the developing step, a first alternating bias for causing the developer to be transferred so as to mainly develop the image end portion of the latent image is imparted to the first developing portion, and a second alternating bias for causing the developer to be transferred so as to mainly effect the development for reproducing the tone of the latent image is imparted to the second developing portion.

摘要翻译： 使显影剂支撑构件与其间具有间隙的潜像承载构件与显影剂相对的显影方法和装置被从显影剂支撑构件转印到潜像承载构件以进行显影，并且其中第一和第 第二显影部分被设置为显影剂支撑构件，这些以命名顺序进行显影以完成显影步骤，赋予用于使显影剂转印以主要显影潜像的图像端部的第一交替偏压 并且第二交替偏压用于使显影剂转印以主要影响用于再现潜像色调的显影，被赋予第二显影部分。