公开(公告)号：US08381140B2

公开(公告)日：2013-02-19

申请号：US13025654

申请日：2011-02-11

申请人： John J. Hench ,  Wen Jin ,  Junwei Bao

发明人： John J. Hench ,  Wen Jin ,  Junwei Bao

IPC分类号： G06F17/50

CPC分类号： G03F7/70491 ,  G03F7/70625 ,  H01L22/12

摘要： Methods of generating wide process range libraries for metrology are described. For example, a method includes generating a first library having a first process range for a first parameter. A second library is generated having a second process range for the first parameter. The second process range is overlapping with the first process range. The second library is stitched to the first library to generate a third library having a third process range for the first parameter. The third process range is wider than each of the first and second process ranges.

摘要翻译： 描述了生成用于度量的广泛过程范围库的方法。 例如，一种方法包括生成具有第一参数的第一处理范围的第一库。 生成具有第一参数的第二处理范围的第二库。 第二个处理范围与第一个处理范围重叠。 第二个库缝合到第一个库以生成第三个库，该第三个库具有第一个参数的第三个处理范围。 第三处理范围比第一和第二处理范围的宽。

公开(公告)号：US07586623B2

公开(公告)日：2009-09-08

申请号：US12127640

申请日：2008-05-27

申请人： Joerg Bischoff ,  Xinhui Niu ,  Junwei Bao

发明人： Joerg Bischoff ,  Xinhui Niu ,  Junwei Bao

IPC分类号： G01B11/24

CPC分类号： G01B11/24 ,  G01N21/4788

摘要： The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.

摘要翻译： 可以通过使用聚焦在单个特征上的光束获得单个特征的光学特征来确定形成在晶片上的单个特征的轮廓。 所获得的光学特征随后可以与一组模拟的光学特征进行比较，其中每个模拟的光学特征对应于单个特征的假设轮廓，并且基于假设轮廓进行建模。

公开(公告)号：US07474993B2

公开(公告)日：2009-01-06

申请号：US11788735

申请日：2007-04-20

申请人： Srinivas Doddi ,  Lawrence Lane ,  Vi Vuong ,  Michael Laughery ,  Junwei Bao ,  Kelly Barry ,  Nickhil Jakatdar ,  Emmanuel Drege

发明人： Srinivas Doddi ,  Lawrence Lane ,  Vi Vuong ,  Michael Laughery ,  Junwei Bao ,  Kelly Barry ,  Nickhil Jakatdar ,  Emmanuel Drege

IPC分类号： G01R13/00 ,  G01R31/26

CPC分类号： G01B11/00

摘要： Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

摘要翻译： 可以使用一个或多个选择标准和终止标准来选择用于集成电路的光学测量的特定波长。 使用选择标准选择波长，并重复选择波长，直到满足终止标准。

公开(公告)号：US20080255801A1

公开(公告)日：2008-10-16

申请号：US11786870

申请日：2007-04-12

申请人： Wen Jin ,  Junwei Bao ,  Shifang Li

发明人： Wen Jin ,  Junwei Bao ,  Shifang Li

IPC分类号： G06F17/18 ,  G01B11/30

CPC分类号： G01B11/24 ,  G03F7/70625

摘要： A structure formed on a semiconductor wafer can be examined using a support vector machine. A profile model of the structure is obtained. The profile model is defined by profile parameters that characterize the geometric shape of the structure. A set of values for the profile parameters is obtained. A set of simulated diffraction signals is generated using the set of values for the profile parameters, each simulated diffraction signal characterizing the behavior of light diffracted from the structure. The support vector machine is trained using the set of simulated diffraction signals as inputs to the support vector machine and the set of values for the profile parameters as expected outputs of the support vector machine. A measured diffraction signal off the structure is obtained. The measured diffraction signal is inputted into the trained support vector machine. Values of profile parameters of the structure are obtained as an output from the trained support vector machine.

摘要翻译： 可以使用支持向量机来检查形成在半导体晶片上的结构。 获得结构的轮廓模型。 轮廓模型由表征结构几何形状的轮廓参数定义。 获得一组轮廓参数的值。 使用一组轮廓参数的值来生成一组模拟衍射信号，每个模拟衍射信号表征从结构衍射的光的行为。 使用一组模拟衍射信号作为支持向量机的输入和用于轮廓参数的值的集合来支持支持向量机作为支持向量机的预期输出。 获得离开结构的测量的衍射信号。 测量的衍射信号被输入到经过训练的支持向量机中。 获得结构的轮廓参数的值作为训练支持向量机的输出。

公开(公告)号：US07417750B2

公开(公告)日：2008-08-26

申请号：US11594659

申请日：2006-11-07

申请人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

发明人： Vi Vuong ,  Junwei Bao ,  Manuel Madriaga

IPC分类号： G01B11/04 ,  G01B15/00 ,  G01N21/88

CPC分类号： G01N21/4788 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2021/95615

摘要： Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using an angle-resolved spectroscopic scatterometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters, characterize geometries of the first structure, and an azimuth angle parameter, which define the angle between the plane of incidence beam and direction of periodicity of the first or second structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is compared to a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal with the azimuth angle parameter having a value that is about 90 degrees different than the value of the azimuth angle parameter used to generate the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison of the second measured diffraction signal to the second simulated diffraction signal.

摘要翻译： 通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号，连续测量形成在半导体晶片上的结构。 使用角度分辨光谱散射仪连续测量第一和第二测量的衍射信号。 将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。 轮廓模型具有轮廓参数，表征第一结构的几何形状和方位角参数，其定义入射光束与第一或第二结构的周期性方向之间的角度。 基于比较确定第一结构的一个或多个特征。 将第二测量的衍射信号与使用与第一模拟衍射信号相同的轮廓模型生成的第二模拟衍射信号进行比较，其中方位角参数具有与用于产生的方位角参数的值不同的约90度的值 第一个模拟衍射信号。 基于第二测量衍射信号与第二模拟衍射信号的比较来确定第二结构的一个或多个特征。

公开(公告)号：US20080170241A1

公开(公告)日：2008-07-17

申请号：US11653061

申请日：2007-01-12

申请人： Jeffrey Chard ,  Junwei Bao ,  Manuel Madriaga

发明人： Jeffrey Chard ,  Junwei Bao ,  Manuel Madriaga

IPC分类号： G01B11/14

CPC分类号： H01L22/12 ,  G03F7/70625 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process step in fabricating a structure on a wafer in a wafer application having one or more process steps and one or more process parameters is controlled by determining a correlation between a set of profile models and one or more key profile shape variables. Each profile model is defined using a set of profile parameters to characterize the shape of the structure. Different sets of profile parameters define the profile models in the set. The one or more key profile shape variables include one or more profile parameters or one or more process parameters. One profile model is selected from the set of profile models based on the correlation and a value of at least one key profile shape variable of the process of the wafer application to be used in fabricating the structure. The structure is fabricated in a first fabrication process cluster using the process step and the value of the at least one key profile shape variable. A measured diffraction signal is obtained off the structure. One or more profile parameters of the structure are determined based on the measured diffraction signal and the selected profile model. The one or more determined profile parameters are transmitted to the first fabrication process cluster or a second fabrication process cluster.

摘要翻译： 通过确定一组轮廓模型和一个或多个关键轮廓形状变量之间的相关性来控制在具有一个或多个处理步骤和一个或多个处理参数的晶片应用中制造晶片上的结构的工艺步骤。 使用一组轮廓参数来定义每个轮廓模型以表征结构的形状。 不同的配置参数集定义集合中的配置文件模型。 一个或多个关键轮廓形状变量包括一个或多个轮廓参数或一个或多个过程参数。 基于相关性和用于制造结构的晶片应用的处理的至少一个关键轮廓形状变量的值，从该组轮廓模型中选择一个轮廓模型。 该结构在第一制造工艺组中使用工艺步骤和至少一个关键型材形状变量的值来制造。 从该结构获得测量的衍射信号。 基于所测量的衍射信号和选择的轮廓模型来确定结构的一个或多个轮廓参数。 一个或多个确定的轮廓参数被传送到第一制造过程集群或第二制造过程集群。

公开(公告)号：US20080151269A1

公开(公告)日：2008-06-26

申请号：US12030166

申请日：2008-02-12

申请人： Vi Vuong ,  Emmanuel Drege ,  Junwei Bao ,  Srinivas Doddi ,  Xinhui Niu ,  Nickhil Jakatdar

发明人： Vi Vuong ,  Emmanuel Drege ,  Junwei Bao ,  Srinivas Doddi ,  Xinhui Niu ,  Nickhil Jakatdar

IPC分类号： G01B11/14

CPC分类号： G03F7/70616 ,  G03F7/705 ,  G03F7/70625

摘要： A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. The set of geometric parameters is selected to a set of optimization parameters. The number of optimization parameters within the set of optimization parameters is less than the number of geometric parameters within the set of geometric parameters. A set of selected optimization parameters is selected from the set of optimization parameters. The parameters of the set of selected geometric parameters are used as parameters of the selected profile model. The selected profile model is tested against one or more termination criteria.

摘要翻译： 选择用于晶片中结构的光学测量的轮廓模型，轮廓模型具有与结构的尺寸相关联的一组几何参数。 选择几组参数集合到一组优化参数中。 该组优化参数内的优化参数的数量小于该组几何参数内的几何参数的数量。 从一组优化参数中选择一组选定的优化参数。 所选择的几何参数集合中的参数被用作所选轮廓模型的参数。 根据一个或多个终止标准测试所选的配置文件模型。

公开(公告)号：US07355728B2

公开(公告)日：2008-04-08

申请号：US11155406

申请日：2005-06-16

申请人： Shifang Li ,  Junwei Bao ,  Hong Qui ,  Victor Liu

发明人： Shifang Li ,  Junwei Bao ,  Hong Qui ,  Victor Liu

IPC分类号： G01B11/14

CPC分类号： G03F7/70625 ,  G01B11/24 ,  G03F7/705

摘要： An optical metrology model for a repetitive structure is optimized by selecting one or more profile parameters using one or more selection criteria. One or more termination criteria are set, the one or more termination criteria comprising measures of stability of the optical metrology model. The profile shape features of the repetitive structure are characterized using the one or more selected profile parameters. The optical metrology model is optimized using a set of values for the one or more selected profile parameters. One or more profile parameters of the profile of the repetitive structure are determined using the optimized optical metrology model and one or more measured diffraction signals. Values of the one or more termination criteria are calculated using the one or more determined profile parameters. When the calculated values of the one or more termination criteria do not match the one or more set termination criteria, the selection of the one or more profile parameters and/or the characterization of the profile shape features of the repetitive structure are revised.

摘要翻译： 通过使用一个或多个选择标准选择一个或多个轮廓参数来优化用于重复结构的光学计量学模型。 设置一个或多个终止标准，所述一个或多个终止标准包括光学测量模型的稳定性的测量。 使用一个或多个所选择的轮廓参数来表征重复结构的轮廓形状特征。 光学测量模型使用一组或多个所选配置文件参数的值进行优化。 使用优化的光学测量模型和一个或多个测量的衍射信号来确定重复结构的轮廓的一个或多个轮廓参数。 使用一个或多个确定的简档参数来计算一个或多个终止标准的值。 当一个或多个终止标准的计算值与一个或多个设定的终止标准不匹配时，修改重复结构的一个或多个简档参数的选择和/或轮廓形状特征的表征。

公开(公告)号：US20080009081A1

公开(公告)日：2008-01-10

申请号：US11484484

申请日：2006-07-10

申请人： Manuel Madriaga ,  Junwei Bao ,  Vi Vuong

发明人： Manuel Madriaga ,  Junwei Bao ,  Vi Vuong

IPC分类号： H01L21/66 ,  G01R31/26 ,  G01B11/14

CPC分类号： G01B11/14 ,  G01N21/4788 ,  G01N21/95607 ,  G01N2021/95615 ,  G03F7/70625

摘要： An apparatus to examine a patterned structure formed on a semiconductor wafer using an optical metrology model includes a fabrication system and a metrology processor. The fabrication system includes a fabrication cluster, metrology cluster, metrology model optimizer, and real time profile estimator. The fabrication cluster is configured to process wafers, the wafers having patterned and unpatterned structures. The patterned structures have underlying film thicknesses, critical dimension, and profile. The metrology cluster includes one or more optical metrology devices. The metrology cluster is configured to measure diffraction signals off the patterned and the unpatterned structures. The metrology model optimizer is configured to optimize an optical metrology model of the patterned structure using one or more measured diffraction signals off the patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters. The real time profile estimator is configured to use the optimized optical metrology model from the metrology model optimizer, the measured diffraction signals off the patterned structure, and a fixed value within the range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters. The real time profile estimator is configured to create an output comprising underlying film thickness, critical dimension, and profile of the patterned structure. The metrology data processor is configured to receive, process, store, and transmit the fixed value within the range of values for the at least one parameter from amongst the material refraction parameters and the metrology device parameters.

摘要翻译： 使用光学测量模型检查在半导体晶片上形成的图案化结构的装置包括制造系统和计量处理器。 制造系统包括制造集群，计量集群，计量模型优化器和实时轮廓估计器。 制造集群被配置为处理晶片，晶片具有图案化和未图案化的结构。 图案化结构具有下面的膜厚度，临界尺寸和轮廓。 计量集群包括一个或多个光学计量装置。 测量簇被配置成测量图案和未图案结构的衍射信号。 计量模型优化器被配置为使用离开图案化结构的一个或多个测量的衍射信号以及浮动轮廓参数，材料折射参数和度量设备参数来优化图案化结构的光学测量模型。 实时轮廓估计器被配置为使用来自计量模型优化器的优化的光学测量模型，离开图案化结构的测量的衍射信号，以及在材料折射参数中的至少一个参数的值范围内的固定值，以及 测量设备参数。 实时轮廓估计器被配置为创建包括图案化结构的基底膜厚度，临界尺寸和轮廓的输出。 计量数据处理器被配置为从材料折射参数和测量装置参数中的至少一个参数的值的范围内接收，处理，存储和传输固定值。

公开(公告)号：US07274465B2

公开(公告)日：2007-09-25

申请号：US11061330

申请日：2005-02-17

申请人： Joerg Bischoff ,  Junwei Bao

发明人： Joerg Bischoff ,  Junwei Bao

IPC分类号： G01B11/02 ,  G01B9/02

CPC分类号： G01N21/95607 ,  G01B11/22 ,  G01B11/24 ,  G01N21/4788 ,  H01L22/12

摘要： A structure formed on a wafer can be examined by directing an incident pulse at the structure, the incident pulse being a sub-picosecond optical pulse. A diffraction pulse resulting from the incident pulse diffracting from the structure is measured. A characteristic of the profile of the structure is then determined based on the measured diffraction pulse.

摘要翻译： 可以通过将入射脉冲定向在晶体结构上，入射脉冲是亚皮秒光脉冲来检查晶片上形成的结构。 测量从结构衍射的入射脉冲产生的衍射脉冲。 然后基于测量的衍射脉冲确定结构轮廓的特性。