公开(公告)号：US08842095B2

公开(公告)日：2014-09-23

申请号：US12926922

申请日：2010-12-17

申请人： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

发明人： Sung-ho Park ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon ,  Seung-eon Ahn

IPC分类号： G06F19/00 ,  G06F3/0354 ,  G06F3/041 ,  G01J1/44 ,  G06F3/038 ,  H01L31/113 ,  H01L27/12 ,  H01L27/146

摘要： Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified.

公开(公告)号：US08253134B2

公开(公告)日：2012-08-28

申请号：US12076486

申请日：2008-03-19

申请人： Sun-il Kim ,  Jae-cheol Lee ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Jae-chul Park

发明人： Sun-il Kim ,  Jae-cheol Lee ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Jae-chul Park

IPC分类号： H01L29/12 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L29/78696

摘要： An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.

摘要翻译： 提供氧化物薄膜晶体管和制造氧化物TFT的方法。 所述氧化物薄膜晶体管（TFT）包括：栅极; 形成为对应于所述栅极的沟道，以及具有比所述沟道更高功函数的覆盖层; 设置在栅极和沟道之间的栅极绝缘体; 以及源极和漏极，分别接触封盖层的两侧和通道之间，部分地接合覆盖层的顶表面。

公开(公告)号：US08188472B2

公开(公告)日：2012-05-29

申请号：US12007085

申请日：2008-01-07

申请人： Jae-chul Park ,  Chang-jung Kim ,  Sun-il Kim ,  I-hun Song ,  Young-soo Park

发明人： Jae-chul Park ,  Chang-jung Kim ,  Sun-il Kim ,  I-hun Song ,  Young-soo Park

IPC分类号： H01L21/786

CPC分类号： H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

摘要： A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.

摘要翻译： 提供薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器。 TFT包括栅极，与栅极接触的栅极绝缘层，与栅极绝缘层接触且与栅极绝缘层面对栅极的沟道层，接触沟道层的端部的源极; 以及与沟道层的另一端接触的漏极，其中，所述沟道层为非晶氧化物半导体层，所述源极和漏极中的每一个为包含氧化物半导体中具有导电杂质的氧化物半导体层的导电氧化物层 层。 源极和漏极可以进一步包含低电阻金属层。 平板显示器的单位像素的驱动电路包括TFT。

公开(公告)号：US20110168993A1

公开(公告)日：2011-07-14

申请号：US12801500

申请日：2010-06-11

申请人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

发明人： Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Sung-ho Park

IPC分类号： H01L29/22 ,  H01L21/336 ,  H01L29/20

CPC分类号： H01L29/7869

摘要： Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.

摘要翻译： 晶体管及其制造方法。 晶体管可以是具有自对准顶栅极结构的氧化物薄膜晶体管（TFT）。 晶体管可以包括从栅电极的两侧延伸的沟道区和栅电极之间的栅极绝缘层。 栅绝缘层可以覆盖源区和漏区的至少一部分。

公开(公告)号：US20110101343A1

公开(公告)日：2011-05-05

申请号：US12929324

申请日：2011-01-14

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12 ,  H01L33/16

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70.Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

摘要翻译： 半导体器件可以包括由下面的式1表示的复合物作为有源层。 x（Ga 2 O 3）y（In 2 O 3）z（ZnO）式1其中约0.75＆lt; lE; x / z＆nlE;约3.15和约0.55≤n1E; y /z≤n1E;约1.70。 可以通过调节与锌（Zn）氧化物混合的镓（Ga）氧化物和铟（In））的量来提高驱动晶体管的开关特性并提高光学灵敏度。

公开(公告)号：US20110101342A1

公开(公告)日：2011-05-05

申请号：US12929323

申请日：2011-01-14

申请人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

发明人： Chang-jung Kim ,  I-hun Song ,  Dong-hun Kang ,  Young-soo Park

IPC分类号： H01L29/12 ,  H01L21/34 ,  H01L33/16

CPC分类号： H01L29/7869

摘要： A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦about 3.15, and about 0.55≦y/z≦about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

公开(公告)号：US07719871B2

公开(公告)日：2010-05-18

申请号：US12025372

申请日：2008-02-04

申请人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

发明人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC分类号： G11C5/06

CPC分类号： G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

摘要翻译： 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US20100091541A1

公开(公告)日：2010-04-15

申请号：US12588275

申请日：2009-10-09

申请人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

发明人： Jae-chul Park ,  Kee-won Kwon ,  I-hun Song ,  Young-soo Park ,  Chang-jung Kim ,  Sang-wook Kim ,  Sun-il Kim

IPC分类号： G11C5/02 ,  G11C8/10 ,  G11C11/00 ,  G11C7/00

CPC分类号： G11C5/02 ,  G11C5/143 ,  G11C7/18 ,  G11C8/12 ,  G11C13/0023 ,  G11C2213/71

摘要： A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit.

摘要翻译： 堆叠存储器件包括多个存储器层，其中多个存储器层中的至少一个堆叠在多个存储器层中的另一个上，并且每个存储器层包括存储器单元阵列，第一有源电路单元配置 将至少一个存储器单元的地址信息分类并处理为垂直地址信息和水平地址信息，以及至少一个第二有源电路单元，配置为基于处理的信号为存储器单元中的至少一个生成存储器选择信号 由第一有源电路单元。

公开(公告)号：US20090206978A1

公开(公告)日：2009-08-20

申请号：US12379347

申请日：2009-02-19

申请人： Soo-Jung Hwang ,  Deok-kee Kim ,  Jung-hun Sung ,  I-hun Song ,  Hyuk-soon Choi

发明人： Soo-Jung Hwang ,  Deok-kee Kim ,  Jung-hun Sung ,  I-hun Song ,  Hyuk-soon Choi

IPC分类号： H01H85/10

CPC分类号： G11C17/16 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： Example embodiments relate to an electrical device, for example, to an electrical fuse device that includes a fuse link for linking a cathode and anode. An electrical device may include a cathode, an anode, and a fuse link. The fuse link may link the cathode and the anode. The fuse link may include a multi-metal layer structure. The fuse link may include a first metal layer including a first resistance, and a second metal layer stacked on the first metal layer and including a second resistance. The first resistance may be different from the second resistance. The fuse link may include a weak point as a region at which electrical blowing is performed easier than other regions of the fuse link.

摘要翻译： 示例性实施例涉及电气设备，例如电气熔断器件，其包括用于连接阴极和阳极的熔断体。 电气设备可以包括阴极，阳极和熔断体。 熔丝链可以连接阴极和阳极。 熔丝链可以包括多金属层结构。 熔丝连接件可以包括第一金属层和第二金属层，第一金属层包括第一电阻，第二金属层堆叠在第一金属层上并包括第二电阻。 第一阻力可能与第二阻力不同。 熔断体可以包括作为进行电吹送的区域的弱点比熔丝链的其它区域更容易。

公开(公告)号：US20080258141A1

公开(公告)日：2008-10-23

申请号：US12007085

申请日：2008-01-07

申请人： Jae-chul Park ,  Chang-jung Kim ,  Sun-il Kim ,  I-hun Song ,  Young-soo Park

发明人： Jae-chul Park ,  Chang-jung Kim ,  Sun-il Kim ,  I-hun Song ,  Young-soo Park

IPC分类号： H01L21/44 ,  H01L29/12

CPC分类号： H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

摘要： A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT.

摘要翻译： 提供薄膜晶体管（TFT），制造TFT的方法以及包括TFT的平板显示器。 TFT包括栅极，与栅极接触的栅极绝缘层，与栅极绝缘层接触且与栅极绝缘层面对栅极的沟道层，接触沟道层的端部的源极; 以及与沟道层的另一端接触的漏极，其中，所述沟道层为非晶氧化物半导体层，所述源极和漏极中的每一个为包含氧化物半导体中具有导电杂质的氧化物半导体层的导电氧化物层 层。 源极和漏极可以进一步包含低电阻金属层。 平板显示器的单位像素的驱动电路包括TFT。