Laser processing method and device
    71.
    发明授权
    Laser processing method and device 有权
    激光加工方法及装置

    公开(公告)号:US08624153B2

    公开(公告)日:2014-01-07

    申请号:US10585343

    申请日:2004-12-13

    IPC分类号: B23K26/14

    摘要: A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided.This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S11 and S12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

    摘要翻译: 提供了一种可以有效地执行激光加工同时最小化激光束在待处理物体的端部中的会聚点的偏差的激光加工方法。 该激光加工方法包括:准备步骤,将透镜保持在初始位置,使得会聚点位于物体内的预定位置; 第一处理步骤(S11和S12),其在将透镜保持在初始位置的同时发射用于处理的第一激光束,并且沿着主表面相对于彼此移动透镜和物体,以在一个主表面上形成改质区域 一段线切断; 以及第二处理步骤(S13和S14),其在形成要切割的线的一个端部中的改质区域之后,将透镜保持在初始位置,然后沿着彼此移动透镜和物体 主表面同时调整透镜与主表面之间的间隙释放后,形成改质区域。

    Method of cutting an object to be processed
    72.
    发明授权
    Method of cutting an object to be processed 有权
    切割待处理物体的方法

    公开(公告)号:US08183131B2

    公开(公告)日:2012-05-22

    申请号:US12570380

    申请日:2009-09-30

    IPC分类号: H01L21/301

    摘要: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

    摘要翻译: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体,从而由于在物体1内由于多光子吸收而形成改质区域7,并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域,沿着被切割物体的线。 随后,物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂,从而沿着物体应该被切割的线路精确地切割物体1。

    Device and method for laser processing
    73.
    发明申请
    Device and method for laser processing 审中-公开
    用于激光加工的装置和方法

    公开(公告)号:US20060144828A1

    公开(公告)日:2006-07-06

    申请号:US10537510

    申请日:2003-12-04

    IPC分类号: B23K26/16

    摘要: A laser processing apparatus and a laser processing method which can accurately converge processing laser light at a predetermined position are provided. In the laser processing apparatus, a condenser lens 31 converges processing laser light L1 and rangefinding laser light L2 onto an object to be processed 1 on the same axis. Here, light-converging point position control means 40 detects reflected light L3 of the rangefinding laser light reflected by the front face 3 of the object 1, and places a light-converging point P1 of the processing laser light L1 at a predetermined position. Since the processing by the processing laser light L1 and the measurement of displacement of the front face 3 by the rangefinding laser light L2 are carried out on the same axis as such, the light-converging point P1 of processing laser light L1 can be prevented from shifting from the predetermined position because of vibrations of the stage 21 and the like. Therefore, the processing laser light L1 can accurately be converged at the predetermined position.

    摘要翻译: 提供了能够将处理激光准确地收敛在预定位置的激光加工装置和激光加工方法。 在激光加工装置中,聚光透镜31将加工用激光L1和测距激光L 2在同一轴上会聚在待处理对象物1上。 这里,聚光点位置控制装置40检测由物体1的正面3反射的测距激光的反射光L 3,并将处理用激光L 1的聚光点P1置于规定的 位置。 由于通过加工用激光L 1的处理和通过测距激光L 2进行的前面3的位移测量在同一轴上进行,因此处理用激光L 1的聚光点P 1 可以防止由于台架21等的振动而从预定位置移动。 因此,处理用激光L 1能够精确地会聚在预定位置。

    Method of cutting processed object
    74.
    发明申请
    Method of cutting processed object 有权
    切割加工对象的方法

    公开(公告)号:US20060011593A1

    公开(公告)日:2006-01-19

    申请号:US10507340

    申请日:2003-03-11

    IPC分类号: B23K26/16

    摘要: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

    摘要翻译: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体,从而由于在物体1内由于多光子吸收而形成改质区域7,并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域,沿着被切割物体的线。 随后,物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂,从而沿着物体应该被切割的线路精确地切割物体1。

    Method of cutting an object to be processed
    75.
    发明授权
    Method of cutting an object to be processed 有权
    切割待处理物体的方法

    公开(公告)号:US08551865B2

    公开(公告)日:2013-10-08

    申请号:US13451988

    申请日:2012-04-20

    IPC分类号: H01L21/301

    摘要: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

    摘要翻译: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体,从而由于在物体1内由于多光子吸收而形成改质区域7,并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域,沿着被切割物体的线。 随后,物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂,从而沿着物体应该被切割的线路精确地切割物体1。

    METHOD OF CUTTING AN OBJECT TO BE PROCESSED
    76.
    发明申请
    METHOD OF CUTTING AN OBJECT TO BE PROCESSED 有权
    切割要处理的对象的方法

    公开(公告)号:US20100015783A1

    公开(公告)日:2010-01-21

    申请号:US12570380

    申请日:2009-09-30

    IPC分类号: H01L21/304 B23K26/38

    摘要: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

    摘要翻译: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体,从而由于在物体1内由于多光子吸收而形成改质区域7,并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域,沿着被切割物体的线。 随后,物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂,从而沿着物体应该被切割的线路精确地切割物体1。

    Laser beam machining method
    77.
    发明申请
    Laser beam machining method 有权
    激光束加工方法

    公开(公告)号:US20060255024A1

    公开(公告)日:2006-11-16

    申请号:US10547976

    申请日:2003-03-12

    IPC分类号: B23K26/38

    摘要: A laser processing method which can accurately cut an object to be processed along a line to cut is provided. A modified region 7 formed by multiphoton absorption forms a cutting start region 8 within an object to be processed 1 along a line 5 along which the object is intended to be cut. Thereafter, the object 1 is irradiated with laser light L2 transmittable through an unmodified region of the object 1, so as to generate fractures 24 from the cutting start region 8 acting as a start point, whereby the object 1 can accurately be cut along the line 5 along which the object is intended to be cut. Expanding an expandable film 19 having the object 1 secured thereto separates individual chips 25 from each other, which can further improve the reliability in cutting the object 1 along the line 5 along which the object is intended to be cut.

    摘要翻译: 提供了一种能够沿着切割线精密切割待处理物体的激光加工方法。 通过多光子吸收形成的改质区域7沿着要切割物体的线5在待处理物体1内形成切割开始区域8。 此后,通过物体1的未修改区域透射的激光L 2照射物体1,以从作为起点的切割起始区域8产生裂缝24,由此物体1能够沿着 线5沿着该物体打算被切割。 扩大具有固定物体1的可膨胀膜19将各个芯片25彼此分开,这可以进一步提高沿着目标1切割对象1的线5切割物体1的可靠性。

    Laser processing method and semiconductor chip
    78.
    发明授权
    Laser processing method and semiconductor chip 有权
    激光加工方法和半导体芯片

    公开(公告)号:US07947574B2

    公开(公告)日:2011-05-24

    申请号:US12748077

    申请日:2010-03-26

    IPC分类号: H01L21/00

    摘要: A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision.This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4, so as to form modified regions 71, 72, 73 within the substrate 4. Here, the quality modified region 71 is formed at a position where the distance between the front face 3 of the substrate 4 and the end part of the quality modified region 71 on the front face side is 5 μm to 15 μm. When the quality modified region 71 is formed at such a position, a laminate part 16 (constituted by interlayer insulating films 17a, 17b here) formed on the front face 3 of the substrate 4 is also cut along a line to cut with a high precision together with the substrate 4.

    摘要翻译: 提供了一种激光加工方法,即使当形成有包括多个功能元件的层叠部件的基板较厚时,也可以高精度地切割基板并层压部件。 该激光加工方法使用背面21作为激光入射面,用激光L照射基板4,并且将聚光点P定位在基板4内,以在其内部形成改质区域71,72,73 这里,质量改质区域71形成在基板4的正面3与正面侧的质量改质区域71的端部之间的距离为5μm〜15μm的位置。 当在这样的位置形成质量改良区域71时,也形成在基板4的正面3上形成的层叠体部16(由这里的层间绝缘膜17a,17b构成),沿着切割线切割高精度 与基板4一起。

    MANUFACTURING METHOD OF SEMICONDUCTOR LASER ELEMENT
    79.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR LASER ELEMENT 有权
    半导体激光元件的制造方法

    公开(公告)号:US20100240159A1

    公开(公告)日:2010-09-23

    申请号:US12676666

    申请日:2008-09-02

    IPC分类号: H01L21/304

    摘要: Starting point regions for cutting 8a, 8b extending along lines to cut 5a, 5b are initially formed in an object to be processed 1. The starting point regions for cutting 8b have modified regions 7b formed by irradiating the object 1 with laser light while locating a converging point within the object 1 and are formed in parts extending along the lines to cut 5b excluding portions 34b intersecting the lines to cut 5a. This makes the starting point regions for cutting 8b much less influential when cutting the object 1 from the starting point regions for cutting 8a acting as a start point, whereby bars with precise cleavage surfaces can reliably be obtained. Therefore, it is unnecessary to form a starting point region for cutting along the lines to cut 5b in each of a plurality of bars, whereby the productivity of semiconductor laser elements can be improved.

    摘要翻译: 最初在被加工物1中形成沿切割线5a,5b延伸的用于切割的切割8a,8b的起点区域。用于切割8b的起点区域具有通过用激光照射物体1而形成的改变区域7b,同时定位 在物体1内的会聚点,并且形成为沿着切割线的线延伸的部分,除了与切割线5a相交的部分34b。 这样,从切点8a的起点区域切断物体1时,能够切割8b的起点区域的影响更小,从而可以可靠地获得具有精确的切割面的条。 因此,不需要在多个条中形成沿着切割线5b切割的起点区域,从而可以提高半导体激光元件的生产率。