METHOD OF CUTTING AN OBJECT TO BE PROCESSED
    6.
    发明申请
    METHOD OF CUTTING AN OBJECT TO BE PROCESSED 有权
    切割要处理的对象的方法

    公开(公告)号:US20120205358A1

    公开(公告)日:2012-08-16

    申请号:US13451988

    申请日:2012-04-20

    IPC分类号: B23K26/00

    摘要: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

    摘要翻译: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体,从而由于在物体1内由于多光子吸收而形成改质区域7,并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域,沿着被切割物体的线。 随后,物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂,从而沿着物体应该被切割的线路精确地切割物体1。

    SEMICONDUCTOR SUBSTRATE CUTTING METHOD
    7.
    发明申请
    SEMICONDUCTOR SUBSTRATE CUTTING METHOD 有权
    半导体基板切割方法

    公开(公告)号:US20120077315A1

    公开(公告)日:2012-03-29

    申请号:US13269274

    申请日:2011-10-07

    IPC分类号: H01L21/50

    摘要: A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.

    摘要翻译: 用激光照射具有由功能元件形成的正面的晶片,同时将晶片的后表面作为激光入射面定位晶片内的聚光点,从而产生多光子吸收,从而形成 一个起始点区域,用于沿着一条线在晶片内熔融的处理区域进行切割。 因此,可以从用于自然切割的起点区域或以相对小的力产生断裂,从而到达前表面和后表面。 因此,在形成切割起点区域之后,通过芯片接合树脂层将膨胀膜附着到晶片的背面,然后扩大时,可以沿着线切割晶片和芯片接合树脂层。

    METHOD OF CUTTING AN OBJECT TO BE PROCESSED
    8.
    发明申请
    METHOD OF CUTTING AN OBJECT TO BE PROCESSED 有权
    切割要处理的对象的方法

    公开(公告)号:US20100015783A1

    公开(公告)日:2010-01-21

    申请号:US12570380

    申请日:2009-09-30

    IPC分类号: H01L21/304 B23K26/38

    摘要: A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

    摘要翻译: 提供了一种切割能够精确地切割物体的物体的方法。 在聚光点P位于其中的同时用激光L照射诸如硅晶片的物体,从而由于在物体1内由于多光子吸收而形成改质区域7,并使改质区域 形成从物体1的厚度的中心线CL向物体1的前面3移动的起始点区域,沿着被切割物体的线。 随后,物体1从其背面21侧被按压。 这可以从作为起始点的切割起点区域8产生断裂,从而沿着物体应该被切割的线路精确地切割物体1。

    LASER PROCESSING METHOD
    9.
    发明申请
    LASER PROCESSING METHOD 有权
    激光加工方法

    公开(公告)号:US20130252402A1

    公开(公告)日:2013-09-26

    申请号:US13614042

    申请日:2012-09-13

    IPC分类号: H01L21/78

    摘要: A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object 1 can be cut with a high accuracy.

    摘要翻译: 提供了能够高精度地切割具有各种层叠结构的待处理物体的激光加工方法。 在聚光点P至少位于基板内的状态下,用激光L照射设置在基板前表面上的基板和层叠体的被处理物,以形成由于 至少在衬底内的多光子吸收,并且使改质区域形成切割起点区域。 当沿着切割起点区域切割物体时,可以高精度地切割物体1。