摘要:
An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns at multiple polarization states and comparing the resulting intensities of the polarization states, it can be determined if the two elements are aligned. A reference measurement location may be used that includes third periodic pattern on the first element and a fourth periodic pattern on the second element, which have a designed in offset, i.e., an offset when there is an offset of a known magnitude when the first and second element are properly aligned. The reference measurement location is measured at two polarization states. The difference in the intensities of the polarization states at reference measurement location and is used to determine the amount of the alignment error.
摘要:
An overlay target for spectroscopic measurement includes at least two diffraction gratings, one grating overlying the other. The diffraction gratings may include an asymmetry relative to each other in order to improve resolution of the presence as well as the direction of any mis-registration. For example, the asymmetry between the two diffraction gratings may be a phase offset, a difference in pitch, line width, etc. The overlay target may be spectroscopically measuring, for example, using an optical model and a best fit analysis. Moreover, the overlay target may be optimized by modeling the overlay target and adjusting the variable parameters and calculating the sensitivity of the overlay target to changes in variable parameters.
摘要:
The thickness of a thin conductive film is accurately measured without direct knowledge of the temperature of the sample. A coulometer measurement during deposition of the conductive film on a substrate, along with other data such as the plated surface area, the electrochemical reaction, the molar volume of the deposited metal and the coulombic efficiency, is used to determine the average thickness of the film. Eddy current measurements yield the sheet resistance of the film at a plurality of locations, from which the average sheet resistance can be determined. The eddy current measurements are made so as to reduce the effects of any temperature change in the sample. The average thickness and the average sheet resistance yield the average resistivity of the film. The thickness of the film at a measurement location can be calculated using that average resistivity and the sheet resistance measurement at that location.
摘要:
An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns at multiple polarization states and comparing the resulting intensities of the polarization states, it can be determined if the two elements are aligned. A reference measurement location may be used that includes third periodic pattern on the first element and a fourth periodic pattern on the second element, which have a designed in offset, i.e., an offset when there is an offset of a known magnitude when the first and second element are properly aligned. The reference measurement location is measured at two polarization states. The difference in the intensities of the polarization states at reference measurement location and is used to determine the amount of the alignment error.
摘要:
A process of modeling a diffracting structure with normally incident radiation and the radiation diffracted from the structure includes constructing an optical model of the diffracting structure and calculating spectral information for the optical model based on a plurality of diffracted orders using either the positive or negative of each of said plurality of diffracted orders and the zero order. The process may be used to measure a diffracting structure, in which spectral information from a diffraction structure is extracted and compared to the calculated extracted information. The optical model is adjusted and the spectral information recalculated until an adequate fit is found, at which time it is known that the optical model accurately describes the actual diffraction grating. The process may be used with any normally incident metrology device, such as a reflectometer, ellipsometer and scatterometer.
摘要:
An interferometer and ellipsometer are combined in a metrology tool to measure the step height of a sample, which may include transparent layers. The metrology tool includes a shared light source that provides a light beam for an interferometer and a light beam for an ellipsometer, interferometer optics which direct the light beam for an interferometer to reflect off of a sample and ellipsometer optics which direct the light beam for an ellipsometer to reflect off a sample, and a detector element for receiving both the reflected light beam for an interferometer and the light beam for an ellipsometer. The light source may produce a single beam that is split into an interferometer and an ellipsometer beam with a beam splitter. In another embodiment, the interferometer and ellipsometer may share at least one of a polarizer, analyzer, or detector element.
摘要:
A metrology system includes a sample holder and a backside reflective element. The backside reflective element causes light that is transmitted through the sample to be reflected and transmitted a second time, in the opposite direction, through the sample. A variable collection range can be adjusted to place the sample, the reflective element or both within the collection range. The collection range is the range of focused light that will be detected. The system can be controlled to move one or both of the sample and the reflective element in or out of the collection range or to alter the optics to adjust the collection range so that one or both of the sample and reflective element are in the collection range. Thus, the metrology system can be configured to operate in reflectance mode, transmittance mode or a mixed reflectance/transmittance mode.
摘要:
An optical measurement instrument that detects and analyzes reflected light includes a sample support, such as a wafer supporting chuck, with a sample bearing surface that is configured so as to not reflect light back to the optical measurement instrument. In one embodiment, the sample bearing surface of the sample support is a layer of material that absorbs light in the wavelength or wavelengths being used by the optical measurement instrument. For example, a hard plastic, such as poly-ether-ether-ketone (PEEK), may be used to absorb light in the infrared wavelengths. In another embodiment, the entire sample support may be manufactured from the light absorbing material. In yet another embodiment, the top surface of the sample support is configured with light scattering depressions, which prevent light that is incident on the sample bearing surface from being reflected back to the optical measurement instrument.
摘要:
A method for determining a value of absolute reflectance of a material at .[.a predetermined.]. .Iadd.any .Iaddend.wavelength, in the ultraviolet range from its measured reflectance which includes system losses contributed by optics, illumination sources, detectors, etc. The method involves the measurement of reflectance from a known material such as single crystal silicon whose absolute reflectance is well known, dividing the measured value by the absolute value to obtain a system efficiency coefficient at the known wavelength and then, without changing the illumination or optics, measuring the reflectance of the unknown material and applying this coefficient to this measured value to obtain its absolute value.
摘要:
A method for determining a value of absolute reflectance of a material at a predetermined wavelength, in the ultraviolet range from its measured reflectance which includes system losses contributed by optics, illumination sources, detectors, etc. The method involves the measurement of reflectance from a known material such as single crystal silicon whose absolute reflectance is well known, dividing the measured value by the absolute value to obtain a system efficiency coefficient at the known wavelength and then, without changing the illumination or optics, measuring the reflectance of the unknown material and applying this coefficient to this measured value to obtain its absolute value.