Alignment target to be measured with multiple polarization states
    71.
    发明授权
    Alignment target to be measured with multiple polarization states 有权
    用多极化状态测量的对准目标

    公开(公告)号:US07236244B1

    公开(公告)日:2007-06-26

    申请号:US11077264

    申请日:2005-03-09

    摘要: An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns at multiple polarization states and comparing the resulting intensities of the polarization states, it can be determined if the two elements are aligned. A reference measurement location may be used that includes third periodic pattern on the first element and a fourth periodic pattern on the second element, which have a designed in offset, i.e., an offset when there is an offset of a known magnitude when the first and second element are properly aligned. The reference measurement location is measured at two polarization states. The difference in the intensities of the polarization states at reference measurement location and is used to determine the amount of the alignment error.

    摘要翻译: 对齐目标包括两个元素上的周期性图案。 当两个元件正确对齐时,周期性图案对准。 通过测量多个极化状态下的两个周期性图案并比较所得到的极化状态的强度,可以确定两个元件是否对齐。 可以使用参考测量位置,其包括第一元件上的第三周期性图案和第二元件上的第四周期性图案,其具有被设计为偏移的偏移,即当第一和第 第二个元素正确对齐。 在两个极化状态下测量参考测量位置。 参考测量位置处极化状态强度的差异,用于确定对准误差的量。

    Spectroscopically measured overlay target
    72.
    发明授权
    Spectroscopically measured overlay target 有权
    光谱测量覆盖目标

    公开(公告)号:US07061615B1

    公开(公告)日:2006-06-13

    申请号:US09960892

    申请日:2001-09-20

    IPC分类号: G01B11/00

    摘要: An overlay target for spectroscopic measurement includes at least two diffraction gratings, one grating overlying the other. The diffraction gratings may include an asymmetry relative to each other in order to improve resolution of the presence as well as the direction of any mis-registration. For example, the asymmetry between the two diffraction gratings may be a phase offset, a difference in pitch, line width, etc. The overlay target may be spectroscopically measuring, for example, using an optical model and a best fit analysis. Moreover, the overlay target may be optimized by modeling the overlay target and adjusting the variable parameters and calculating the sensitivity of the overlay target to changes in variable parameters.

    摘要翻译: 用于光谱测量的覆盖目标包括至少两个衍射光栅,一个覆盖另一个的光栅。 衍射光栅可以包括相对于彼此的不对称性,以便改善存在的分辨率以及任何错误配准的方向。 例如,两个衍射光栅之间的不对称可以是相位偏移,间距差,线宽等。覆盖目标可以例如使用光学模型和最佳拟合分析进行光谱测量。 此外,可以通过对覆盖目标进行建模并调整可变参数并计算覆盖目标对可变参数变化的灵敏度来优化覆盖目标。

    Accurate thickness measurement of thin conductive film
    73.
    发明授权
    Accurate thickness measurement of thin conductive film 有权
    薄导电膜的精确厚度测量

    公开(公告)号:US07005306B1

    公开(公告)日:2006-02-28

    申请号:US10618155

    申请日:2003-07-11

    申请人: Jaime Poris

    发明人: Jaime Poris

    IPC分类号: H01L21/66

    摘要: The thickness of a thin conductive film is accurately measured without direct knowledge of the temperature of the sample. A coulometer measurement during deposition of the conductive film on a substrate, along with other data such as the plated surface area, the electrochemical reaction, the molar volume of the deposited metal and the coulombic efficiency, is used to determine the average thickness of the film. Eddy current measurements yield the sheet resistance of the film at a plurality of locations, from which the average sheet resistance can be determined. The eddy current measurements are made so as to reduce the effects of any temperature change in the sample. The average thickness and the average sheet resistance yield the average resistivity of the film. The thickness of the film at a measurement location can be calculated using that average resistivity and the sheet resistance measurement at that location.

    摘要翻译: 在不直接了解样品温度的情况下,精确测量薄导电膜的厚度。 使用在基板上沉积导电膜期间的电量计测量以及诸如电镀表面积,电化学反应,沉积金属的摩尔体积和库仑效率的其它数据来确定膜的平均厚度 。 涡流测量产生薄膜在多个位置处的薄层电阻,可以确定平均薄层电阻。 进行涡流测量以减少样品中任何温度变化的影响。 平均厚度和平均薄层电阻产生薄膜的平均电阻率。 可以使用该位置处的平均电阻率和薄层电阻测量来计算测量位置处的膜的厚度。

    Measuring an alignment target with multiple polarization states
    74.
    发明授权
    Measuring an alignment target with multiple polarization states 有权
    测量具有多极化状态的对准目标

    公开(公告)号:US06949462B1

    公开(公告)日:2005-09-27

    申请号:US10116798

    申请日:2002-04-04

    IPC分类号: G03F9/00 H01L21/4763

    摘要: An alignment target includes periodic patterns on two elements. The periodic patterns are aligned when the two elements are properly aligned. By measuring the two periodic patterns at multiple polarization states and comparing the resulting intensities of the polarization states, it can be determined if the two elements are aligned. A reference measurement location may be used that includes third periodic pattern on the first element and a fourth periodic pattern on the second element, which have a designed in offset, i.e., an offset when there is an offset of a known magnitude when the first and second element are properly aligned. The reference measurement location is measured at two polarization states. The difference in the intensities of the polarization states at reference measurement location and is used to determine the amount of the alignment error.

    摘要翻译: 对齐目标包括两个元素上的周期性图案。 当两个元件正确对齐时,周期性图案对准。 通过测量多个极化状态下的两个周期性图案并比较所得到的极化状态的强度,可以确定两个元件是否对齐。 可以使用参考测量位置,其包括第一元件上的第三周期性图案和第二元件上的第四周期性图案,其具有被设计为偏移的偏移,即当第一和第 第二个元素正确对齐。 在两个极化状态下测量参考测量位置。 参考测量位置处极化状态强度的差异,用于确定对准误差的量。

    Measurement of diffracting structures using one-half of the non-zero diffracted orders
    75.
    发明授权
    Measurement of diffracting structures using one-half of the non-zero diffracted orders 有权
    使用非零衍射阶数的一半测量衍射结构

    公开(公告)号:US06898537B1

    公开(公告)日:2005-05-24

    申请号:US09844559

    申请日:2001-04-27

    摘要: A process of modeling a diffracting structure with normally incident radiation and the radiation diffracted from the structure includes constructing an optical model of the diffracting structure and calculating spectral information for the optical model based on a plurality of diffracted orders using either the positive or negative of each of said plurality of diffracted orders and the zero order. The process may be used to measure a diffracting structure, in which spectral information from a diffraction structure is extracted and compared to the calculated extracted information. The optical model is adjusted and the spectral information recalculated until an adequate fit is found, at which time it is known that the optical model accurately describes the actual diffraction grating. The process may be used with any normally incident metrology device, such as a reflectometer, ellipsometer and scatterometer.

    摘要翻译: 利用正常入射的辐射和从结构衍射的辐射对衍射结构进行建模的过程包括构建衍射结构的光学模型,并且基于多个衍射级使用每个衍射结构的正或负来计算光学模型的光谱信息 的所述多个衍射级和零级。 该过程可以用于测量衍射结构,其中提取衍射结构的光谱信息并将其与计算出的提取信息进行比较。 调整光学模型,并重新计算光谱信息,直到找到足够的拟合,此时已知光学模型准确地描述了实际的衍射光栅。 该过程可以与任何通常入射的测量装置一起使用,例如反射计,椭偏仪和散射仪。

    Optical metrology system with combined interferometer and ellipsometer
    76.
    发明授权
    Optical metrology system with combined interferometer and ellipsometer 失效
    光学计量系统与组合干涉仪和椭偏仪

    公开(公告)号:US06856384B1

    公开(公告)日:2005-02-15

    申请号:US10016943

    申请日:2001-12-13

    申请人: Pablo I. Rovira

    发明人: Pablo I. Rovira

    IPC分类号: G01B9/02 G01B11/06

    CPC分类号: G01B11/0608

    摘要: An interferometer and ellipsometer are combined in a metrology tool to measure the step height of a sample, which may include transparent layers. The metrology tool includes a shared light source that provides a light beam for an interferometer and a light beam for an ellipsometer, interferometer optics which direct the light beam for an interferometer to reflect off of a sample and ellipsometer optics which direct the light beam for an ellipsometer to reflect off a sample, and a detector element for receiving both the reflected light beam for an interferometer and the light beam for an ellipsometer. The light source may produce a single beam that is split into an interferometer and an ellipsometer beam with a beam splitter. In another embodiment, the interferometer and ellipsometer may share at least one of a polarizer, analyzer, or detector element.

    摘要翻译: 干涉仪和椭偏仪在计量工具中组合以测量样品的台阶高度,其可以包括透明层。 计量工具包括一个共享光源,它为干涉仪提供一个光束,一个用于椭偏仪的光束,干涉仪光学器件,它将光束引导到一个干涉仪上,以反射一个样品,椭偏仪光学器件将光束引导到一个 用于反射样品的椭圆光度计和用于接收用于干涉仪的反射光束和用于椭偏仪的光束的检测器元件。 光源可以产生分离成干涉仪的单个光束和具有分束器的椭圆光度计光束。 在另一个实施例中,干涉仪和椭偏仪可以共享偏振器,分析器或检测器元件中的至少一个。

    Configurable metrology device that operates in reflectance mode, transmittance mode, or mixed mode
    77.
    发明授权
    Configurable metrology device that operates in reflectance mode, transmittance mode, or mixed mode 失效
    可配置的测量设备,可在反射模式,透射模式或混合模式下工作

    公开(公告)号:US06842251B1

    公开(公告)日:2005-01-11

    申请号:US09923723

    申请日:2001-08-06

    申请人: James M. Holden

    发明人: James M. Holden

    摘要: A metrology system includes a sample holder and a backside reflective element. The backside reflective element causes light that is transmitted through the sample to be reflected and transmitted a second time, in the opposite direction, through the sample. A variable collection range can be adjusted to place the sample, the reflective element or both within the collection range. The collection range is the range of focused light that will be detected. The system can be controlled to move one or both of the sample and the reflective element in or out of the collection range or to alter the optics to adjust the collection range so that one or both of the sample and reflective element are in the collection range. Thus, the metrology system can be configured to operate in reflectance mode, transmittance mode or a mixed reflectance/transmittance mode.

    摘要翻译: 计量系统包括样品架和背面反射元件。 背面反射元件使得透过样品的光被反射并在相反的方向上透过样品第二次透射。 可以调整变量收集范围以将样品,反射元件或两者都放置在收集范围内。 收集范围是将被检测到的聚焦光的范围。 该系统可以被控制以将样品和反射元件中的一个或两个移入或移出收集范围,或者改变光学元件以调整收集范围,使得样品和反射元件中的一个或两个处于收集范围 。 因此,测量系统可以被配置为在反射模式,透射模式或混合反射/透射模式下操作。

    Sample support with a non-reflecting sample supporting surface
    78.
    发明授权
    Sample support with a non-reflecting sample supporting surface 有权
    样品支架带有非反射样品支撑面

    公开(公告)号:US6108077A

    公开(公告)日:2000-08-22

    申请号:US209365

    申请日:1998-12-08

    IPC分类号: G01N21/01 G01N21/95 G01J1/00

    CPC分类号: G01N21/01 G01N21/9501

    摘要: An optical measurement instrument that detects and analyzes reflected light includes a sample support, such as a wafer supporting chuck, with a sample bearing surface that is configured so as to not reflect light back to the optical measurement instrument. In one embodiment, the sample bearing surface of the sample support is a layer of material that absorbs light in the wavelength or wavelengths being used by the optical measurement instrument. For example, a hard plastic, such as poly-ether-ether-ketone (PEEK), may be used to absorb light in the infrared wavelengths. In another embodiment, the entire sample support may be manufactured from the light absorbing material. In yet another embodiment, the top surface of the sample support is configured with light scattering depressions, which prevent light that is incident on the sample bearing surface from being reflected back to the optical measurement instrument.

    摘要翻译: 检测和分析反射光的光学测量仪器包括样品支撑件,例如晶片支撑卡盘,其具有被构造成不将光反射回到光学测量仪器的样品支承表面。 在一个实施例中,样品支架的样品承载表面是吸收由光学测量仪器使用的波长或波长的光的材料层。 例如,可以使用诸如聚醚醚酮(PEEK)的硬塑料来吸收红外波长的光。 在另一个实施例中,整个样品支架可以由光吸收材料制成。 在另一个实施例中,样品支架的顶表面配置有光散射凹陷,其阻止入射在样品支承表面上的光被反射回到光学测量仪器。

    Method for determining absolute reflectance of a material in the
ultraviolet range
    79.
    再颁专利
    Method for determining absolute reflectance of a material in the ultraviolet range 无效
    用于确定材料在紫外线范围内的绝对反射率的方法

    公开(公告)号:USRE34783E

    公开(公告)日:1994-11-08

    申请号:US111298

    申请日:1993-08-23

    申请人: Vincent J. Coates

    发明人: Vincent J. Coates

    IPC分类号: G01N21/33 G01N21/55 G01J1/42

    摘要: A method for determining a value of absolute reflectance of a material at .[.a predetermined.]. .Iadd.any .Iaddend.wavelength, in the ultraviolet range from its measured reflectance which includes system losses contributed by optics, illumination sources, detectors, etc. The method involves the measurement of reflectance from a known material such as single crystal silicon whose absolute reflectance is well known, dividing the measured value by the absolute value to obtain a system efficiency coefficient at the known wavelength and then, without changing the illumination or optics, measuring the reflectance of the unknown material and applying this coefficient to this measured value to obtain its absolute value.

    摘要翻译: 用于确定在其所测量的反射率的紫外线范围内[预定]任何波长的材料的绝对反射率的值的方法,其包括由光学器件,照明源,检测器等引起的系统损耗。该方法包括测量反射率 从绝对反射率众所周知的已知材料如单晶硅,将测量值除以绝对值以获得已知波长的系统效率系数,然后在不改变照明或光学器件的情况下测量未知的反射率 材料,并将该系数应用于该测量值以获得其绝对值。

    Method for determining absolute reflectance of a material in the
ultraviolet range
    80.
    发明授权
    Method for determining absolute reflectance of a material in the ultraviolet range 失效
    用于确定材料在紫外线范围内的绝对反射率的方法

    公开(公告)号:US5045704A

    公开(公告)日:1991-09-03

    申请号:US473649

    申请日:1990-02-01

    申请人: Vincent J. Coates

    发明人: Vincent J. Coates

    IPC分类号: G01N21/33 G01N21/55

    摘要: A method for determining a value of absolute reflectance of a material at a predetermined wavelength, in the ultraviolet range from its measured reflectance which includes system losses contributed by optics, illumination sources, detectors, etc. The method involves the measurement of reflectance from a known material such as single crystal silicon whose absolute reflectance is well known, dividing the measured value by the absolute value to obtain a system efficiency coefficient at the known wavelength and then, without changing the illumination or optics, measuring the reflectance of the unknown material and applying this coefficient to this measured value to obtain its absolute value.

    摘要翻译: 用于确定在预定波长的材料的绝对反射率的值的方法,其紫外范围从其测量的反射率(包括由光学器件,照明源,检测器等)贡献的系统损耗。该方法包括从已知的 材料如绝对反射率是众所周知的单晶硅,将测量值除以绝对值以获得已知波长的系统效率系数,然后在不改变照明或光学器件的情况下测量未知材料的反射率并施加 这个系数对这个测量值得到其绝对值。