公开(公告)号：US20040056210A1

公开(公告)日：2004-03-25

申请号：US10368825

申请日：2003-02-19

Inventor： Ernst F. Scherer

IPC: G21G005/00

CPC classification number: H01J37/3171 ,  G04F10/00 ,  G04F10/10 ,  H01J2237/05 ,  H01J2237/30472

Abstract: Apparatus and methods are disclosed for measuring time delays between pulse streams or other input signals and for measuring ion beam energies in an ion implantation system. A variable delay apparatus is applied to one input signal, and the signals are correlated or compared in a correlator apparatus providing a minimum, maximum, or other ascertainable output signal value when a delay value of the variable delay is representative of the time delay between the first and second input signals. By adjusting or sweeping the variable delay until the ascertainable correlator apparatus output value is obtained, the actual time delay is determined as the dialed-in value of the variable delay that produces the ascertainable correlator output value. The variable delay measurement apparatus and methods may be employed in ion implantation system for measuring ion beam energies using time of flight probes, wherein the system and the time delay measurement apparatus may be calibrated to remove any residual delays of the system, such as delay offsets related to channel imbalance in the system and connecting devices. In addition, a unique error correction method is disclosed, which may be applied to the time delay measurement system measurement to minimize or mitigate errors introduced by electronic components of the system.

公开(公告)号：US06710358B1

公开(公告)日：2004-03-23

申请号：US09513396

申请日：2000-02-25

Applicant: Jiong Chen ,  Peiching Ling

Inventor： Jiong Chen ,  Peiching Ling

IPC: G21K510

CPC classification number: H01J37/3171 ,  H01J2237/05

Abstract: An ion implantation method for reducing energy contamination in low energy beams is disclosed in this invention. The ion implantation method requires the use of a target chamber for containing a target for implantation in vacuum and an ion source chamber with an ion source for generating an ion beam. A means for conducting a mass analysis of the ion beam, such as an analyzer magnet, is also needed. The ion source chamber includes a beam deceleration optics that includes a beam deceleration means for decelerating the ion beam for producing a low energy ion beam. The beam deceleration optics further includes a beam steering means for generating an electrostatic field for steering the ion beam to a targeted ion-beam direction and separating neutralized particles from the ion beam by allowing the neutralized particles to transmit in a neutralized-particle direction slightly different from the targeted ion-beam direction. The ion beam steering means further includes a beam stopper for blocking said neutralized particles from reaching said target of implantation that minimizes energy contamination from high energy neutralized particles.

Abstract translation: 在本发明中公开了一种用于减少能量束中的能量污染的离子注入方法。 离子注入方法需要使用目标室来容纳用于在真空中注入的靶和具有用于产生离子束的离子源的离子源室。 还需要用于进行离子束的质量分析的装置，例如分析器磁体。 离子源室包括光束减速光学器件，其包括用于减小离子束以产生低能量离子束的光束减速装置。 光束减速光学元件进一步包括光束转向装置，用于产生用于将离子束转向目标离子束方向的静电场，并且通过允许中和的颗粒在中和颗粒方向上稍微不同的透射从离子束分离中和的颗粒 从目标离子束方向。 离子束转向装置还包括用于阻挡所述被中和的颗粒到达所述注入目标的束塞，其最小化来自高能中和颗粒的能量污染。

公开(公告)号：US20030038252A1

公开(公告)日：2003-02-27

申请号：US10177970

申请日：2002-06-21

Applicant: Toyo Tanso Co., Ltd.

Inventor： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC: G21K005/10 ,  H01J037/08 ,  G21F001/00 ,  H01L021/425

CPC classification number: H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

Abstract translation: 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US5811820A

公开(公告)日：1998-09-22

申请号：US662336

申请日：1996-06-12

Applicant: Nicholas J. Kirchner ,  Felix G. Gutman ,  Oleg V. Alexandrov ,  Efim A. Dynin

Inventor： Nicholas J. Kirchner ,  Felix G. Gutman ,  Oleg V. Alexandrov ,  Efim A. Dynin

IPC: H01J37/317 ,  C23C14/22 ,  C23C14/32 ,  C23C14/48 ,  H01J37/30 ,  H01J49/42 ,  G01N21/01 ,  B01D59/44 ,  C23C14/00 ,  H01J27/00

CPC classification number: H01J49/4235 ,  C23C14/221 ,  C23C14/48 ,  H01J37/3007 ,  H01J49/009 ,  H01J2237/0041 ,  H01J2237/05 ,  H01J2237/317

Abstract: A device for the parallel processing of ions is provided. The device may be utilized for thin film deposition or ion implantation and may include the following: an ion source, ion capture and storage ion optics, mass selection ion optics, neutral trapping elements, extraction ion optics, beam neutralization mechanisms, and a substrate on which deposition and thin film growth occurs is provided. Ions are captured and stored within a closely packed array of parallel ion conducting channels. The ion conducting channels transport high current low energy ions from the ion source to irradiate the substrate target. During transport, ion species can be mass selected, merged with ions from multiple sources, and undergo gas phase charge exchange ion molecule reactions. Additionally, neutrals from the ion source, ion-molecule reaction reagent gases, residual background gas, or neutralization of ions may be eliminated from the processing stream by turbo pumping, cryo pumping, and cryocondensation on some of the ion optic elements. Different types of ion optic elements, including elements which are parallel or perpendicular to the ion path, and neutral trapping elements may be combined in different ways to achieve thin film ion deposition over a large homogenous substrate surface.

Abstract translation: 提供了用于并联处理离子的装置。 该器件可用于薄膜沉积或离子注入，并且可以包括以下：离子源，离子捕获和存储离子光学器件，质量选择离子光学器件，中性俘获元件，提取离子光学器件，光束中和机构以及衬底 提供了沉积和薄膜生长发生。 离子被捕获并存储在紧密排列的平行离子导电通道阵列中。 离子传导通道从离子源传输高电流低能离子以照射衬底靶。 在运输过程中，可以质量选择离子种类，与来自多个来源的离子合并，并进行气相电荷交换离子分子反应。 此外，离子源的中性粒子，离子分子反应试剂气体，残余背景气体或离子的中和可以通过在一些离子光学元件上的涡轮泵送，低温泵送和低温冷冻从处理流中消除。 可以以不同的方式组合不同类型的离子光学元件，包括平行于或垂直于离子路径的元件和中性俘获元件，以在大的均匀基底表面上实现薄膜离子沉积。