公开(公告)号：US20030052270A1

公开(公告)日：2003-03-20

申请号：US10274328

申请日：2002-10-18

Applicant: ADVANTEST CORPORATION

Inventor： Jun Matsumoto ,  Takayuki Nakamura

IPC: H01J037/28

CPC classification number: H01J37/28 ,  G01B15/00 ,  H01J2237/2816

Abstract: An electron beam length-measurement apparatus for measuring a length of a predetermined portion of an object by using an electron beam, includes: an electron gun for emitting the electron beam; a deflecting unit for deflecting the electron beam; an object holding unit on which the object is to be placed; a detector for detecting electrons that are scattered by the electron beam; a memory for storing layout position information that specifies a layout position at which the predetermined portion of the object; a length-measurement scanning controller for controlling the deflecting unit to scan with the electron beam to allow the layout position on the object to be irradiated with the electron beam; and a measurement unit operable to measure the length of the predetermined portion of the object based on a changing manner of the electrons successively detected by the detector while the length-measurement scanning controller scans with the electron beam.

Abstract translation: 一种用于通过使用电子束测量物体的预定部分的长度的电子束长度测量装置，包括：用于发射电子束的电子枪; 用于偏转电子束的偏转单元; 物体保持单元，待放置物体; 用于检测由电子束散射的电子的检测器; 存储器，用于存储指定对象的预定部分的布局位置的布局位置信息; 长度测量扫描控制器，用于控制偏转单元用电子束扫描以允许物体上的布局位置用电子束照射; 以及测量单元，其可操作以基于当长度测量扫描控制器用电子束扫描时由检测器连续检测的电子的改变方式来测量物体的预定部分的长度。

公开(公告)号：US20030042417A1

公开(公告)日：2003-03-06

申请号：US10234152

申请日：2002-09-05

Applicant: EBARA CORPORATION

Inventor： Mamoru Nakasuji ,  Takao Kato ,  Kenji Watanabe ,  Shoji Yoshikawa ,  Tohru Satake ,  Nobuharu Noji

IPC: H01J037/28

CPC classification number: B82Y10/00 ,  G01N23/225 ,  G01R31/307 ,  H01J37/242 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24507 ,  H01J2237/2817

Abstract: An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample. When the sample is evaluated, a direction in which the stage is moved is corrected to align with the direction in which the dies are arranged.

Abstract translation: 提供电子束装置，用于以简单的结构以高通量可靠地测量电位对比度等。 用于照射形成有电子束图案的晶片的样品（如晶片）以评估样品的电子束装置包括用于容纳电子束源的电子 - 光学柱，物镜，ExB分离器和次级 电子束检测器 用于保持样品的阶段，并相对于电子 - 光学柱相对移动样品; 用于容纳舞台并能够在真空气氛中控制其内部的工作室; 用于将样品供应到载物台的装载机; 电压施加机构，用于向样品施加电压，并且能够向物镜的下电极施加至少两个电压; 以及用于测量模具布置在样品上的方向的对准机构。 当评估样品时，对载物台移动的方向进行校正，使其与模具的排列方向一致。

公开(公告)号：US20030006371A1

公开(公告)日：2003-01-09

申请号：US10114938

申请日：2002-04-04

Inventor： Masahiro Watanabe ,  Masayoshi Takeda ,  Koichi Hayakawa ,  Yasuhiro Gunji

IPC: H01J037/28

CPC classification number: H01J37/153 ,  H01J37/28 ,  H01J2237/2817

Abstract: In order to provide a charged-particle beam apparatus and an automatic astigmatism adjustment method that are capable of adjusting astigmatism and a focus in a short period of time and with a high degree of precision, the present invention implements fast, precise and automatic astigmatism and focus adjustment by detection of an astigmatic difference's direction and magnitude as well as a focal offset in processing to process a small number of 2-dimensional pictures obtained by varying a focus in two different scanning directions, and by transformation of the direction and magnitude into two kinds of astigmatism correction quantity to be used for correction of the astigmatism as well as transformation of the focal offset into a focus correction quantity to be used for correction of the focus. In addition, by correcting astigmatic-difference errors, it is possible to implement automatic adjustment of astigmatism and a focus with a high degree of precision.

Abstract translation: 为了提供能够在短时间内以高精度调整像散和聚焦的带电粒子束装置和自动像散调整方法，本发明实现快速，精确和自动的散光， 通过检测散光差异的方向和幅度的焦点调整以及处理以处理通过在两个不同的扫描方向上改变焦点获得的少量2维图像的焦点偏移，并且通过将方向和幅度变换成两个 用于校正像散的像散校正量的种类以及将焦点偏移变换为用于校正焦点的聚焦校正量。 另外，通过校正散光差异误差，可以以高精度实现像散和焦点的自动调整。

公开(公告)号：US20020134936A1

公开(公告)日：2002-09-26

申请号：US10035150

申请日：2002-01-04

Inventor： Miyako Matsui ,  Mari Nozoe ,  Atsuko Takafuji

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J2237/281 ,  H01J2237/2817

Abstract: The present invention provides a wafer inspection technique capable of detecting a defect in a wafer on which a pattern having a large step such as a contact hole being subjected to a semiconductor manufacturing process is formed and obtaining information such as the position and kind of a defect such as a hole with open contact failure caused in dry etching process at high speed. A wafer on which a pattern having a large step being subjected to a semiconductor manufacturing process is formed is scanned and irradiated with an electron beam having irradiation energy which is in a range from 100 eV to 1,000 eV, and a defect is detected at high speed from an image of secondary electrons generated. Before the secondary electron image is captured, the wafer is irradiated with an electron beam at high speed while being moved to thereby charge the surface of the wafer with a desired charging voltage. The kind of the defect is determined from the captured secondary electron image, and a distribution of defects in the plane of the wafer is displayed.

Abstract translation: 本发明提供一种晶片检查技术，其能够检测在其上形成具有大台阶的图案的晶片中的缺陷，所述图案具有形成半导体制造工艺的接触孔，诸如缺陷的位置和种类等信息 例如在高速干燥蚀刻工艺中引起的具有开放接触故障的孔。 对其上形成具有大步骤的图案进行半导体制造处理的晶片被扫描并照射具有在100eV至1,000eV范围内的照射能量的电子束，并且以高速检测缺陷 从二次电子的图像生成。 在捕获二次电子图像之前，在移动的同时以高速度用电子束照射晶片，从而以期望的充电电压对晶片的表面充电。 从捕获的二次电子图像确定缺陷的种类，并且显示晶片的平面中的缺陷的分布。