公开(公告)号：US20220115841A1

公开(公告)日：2022-04-14

申请号：US17561187

申请日：2021-12-23

申请人： Huawei Technologies Co., Ltd.

发明人： Ning Cheng ,  Xiang Liu ,  Frank Effenberger

IPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343

摘要： A semiconductor laser comprises: a substrate; a first cladding layer disposed above the substrate; a second cladding layer disposed above the first cladding layer so that the first cladding layer is positioned between the substrate and the second cladding layer; and a first mode expansion layer within the first cladding layer, a second mode expansion layer within the second cladding layer, or both the first mode expansion layer within the first cladding layer and the second mode expansion layer within the second cladding.

公开(公告)号：US20220109286A1

公开(公告)日：2022-04-07

申请号：US17494815

申请日：2021-10-05

申请人： SEIKO EPSON CORPORATION ,  SOPHIA SCHOOL CORPORATION

发明人： Hiroki NISHIOKA ,  Katsumi KISHINO

IPC分类号： H01S5/11 ,  H01S5/343 ,  H01S5/34 ,  H01S5/30

摘要： A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p−q.

公开(公告)号：US11280727B2

公开(公告)日：2022-03-22

申请号：US15715534

申请日：2017-09-26

申请人： PURDUE RESEARCH FOUNDATION

发明人： Delong Zhang ,  Ji-Xin Cheng

IPC分类号： G01N21/35 ,  G01N21/17 ,  C12Q1/02 ,  G01J5/22 ,  G01N21/3563 ,  G01J5/00 ,  G02B21/02 ,  G02B21/06 ,  G02B21/18 ,  H01S5/34

摘要： Systems and methods for sensing vibrational absorption induced photothermal effect via a visible light source. A Mid-infrared photothermal probe (MI-PTP, or MIP) approach achieves 10 mM detection sensitivity and sub-micron lateral spatial resolution. Such performance exceeds the diffraction limit of infrared microscopy and allows label-free three-dimensional chemical imaging of live cells and organisms. Distributions of endogenous lipid and exogenous drug inside single cells can be visualized. MIP imaging technology may enable applications from monitoring metabolic activities to high-resolution mapping of drug molecules in living systems, which are beyond the reach of current infrared microscopy.

公开(公告)号：US11233374B2

公开(公告)日：2022-01-25

申请号：US16152661

申请日：2018-10-05

申请人： Samsung Electronics Co., Ltd.

发明人： Jung-Ho Cha ,  Seong-Gu Kim ,  Dong-Jae Shin ,  Yong-Hwack Shin ,  Kyoung-Ho Ha

IPC分类号： H01S5/02 ,  H01S5/10 ,  H01S5/20 ,  H01S5/024 ,  H01S5/026 ,  H01S5/323 ,  H01S5/042 ,  H01S5/40 ,  H01S5/32 ,  H01S5/343 ,  H01S5/34 ,  H01S5/125 ,  H01S5/227

摘要： A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

公开(公告)号：US20220013985A1

公开(公告)日：2022-01-13

申请号：US17484370

申请日：2021-09-24

申请人： Quintessent Inc.

发明人： Brian KOCH ,  Michael DAVENPORT ,  Alan LIU ,  Justin Colby NORMAN

IPC分类号： H01S5/10 ,  H01S5/34 ,  H01S5/20

摘要： Integrated-optics systems are presented in which an optically active device is optically coupled with a silicon waveguide via a passive compound-semiconductor waveguide. In a first region, the passive waveguide and the optically active device collectively define a composite waveguide structure, where the optically active device functions as the central ridge portion of a rib-waveguide structure. The optically active device is configured to control the vertical position of an optical mode in the composite waveguide along its length such that the optical mode is optically coupled into the passive waveguide with low loss. The passive waveguide and the silicon waveguide collectively define a vertical coupler in a second region, where the passive and silicon waveguides are configured to control the distribution of the optical mode along the length of the coupler, thereby enabling the entire mode to transition between the passive and silicon waveguides with low loss.

公开(公告)号：US20210404957A1

公开(公告)日：2021-12-30

申请号：US17407261

申请日：2021-08-20

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. MEYER ,  Igor VURGAFTMAN ,  Chadwick Lawrence CANEDY ,  William W. BEWLEY ,  Chul Soo KIM ,  Charles D. MERRITT ,  Michael V. WARREN ,  R. Joseph WEIBLEN ,  Mijin KIM

IPC分类号： G01N21/59 ,  G01J3/28 ,  G01N21/25 ,  G01N21/27 ,  G02B6/10 ,  H01S5/02 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042 ,  H01S5/10 ,  H01S5/125 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  G01J3/18

摘要： Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US20210399525A1

公开(公告)日：2021-12-23

申请号：US17135511

申请日：2020-12-28

申请人： Lumentum Operations LLC

发明人： Guowei ZHAO ,  Matthew Glenn PETERS ,  Jun YANG ,  Eric R. HEGBLOM

IPC分类号： H01S5/183 ,  H01S5/34 ,  H01S5/042 ,  H01S5/42

摘要： A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

公开(公告)号：US20210399521A1

公开(公告)日：2021-12-23

申请号：US17304269

申请日：2021-06-17

申请人： University of Central Florida Research Foundation, Inc.

发明人： Arkadiy Lyakh

IPC分类号： H01S5/10 ,  H01S5/34 ,  H01S5/22

摘要： A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.

公开(公告)号：US20210396665A1

公开(公告)日：2021-12-23

申请号：US17407223

申请日：2021-08-20

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC分类号： G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22

摘要： Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US11196232B2

公开(公告)日：2021-12-07

申请号：US16845235

申请日：2020-04-10

申请人： Lumentum Japan, Inc.

发明人： Takayuki Nakajima ,  Atsushi Nakamura ,  Yuji Sekino

IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S5/12

摘要： A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second layers.