公开(公告)号：US06334798B1

公开(公告)日：2002-01-01

申请号：US09544629

申请日：2000-04-06

申请人： Hitoshi Ushijima ,  Yasuyuki Saito

发明人： Hitoshi Ushijima ,  Yasuyuki Saito

IPC分类号： H01R410

CPC分类号： H01R4/187 ,  H01R4/024 ,  H01R43/048

摘要： In a structure 21 for connecting an electric wire and a connecting terminal in the invention, a ductile metal film 29 is formed in advance on an inner surface of a conductor caulking portion 24 of a crimp terminal 22 by such as plating, vacuum deposition, or adhesion. Then, the conductor caulking portion 24 in the rear portion of the crimp terminal 22 is caulked onto core wire portions M in a state of being stripped and extended in the axial direction from an end of a sheathed wire W to thereby establish connection. Subsequently, the metal film 29 is fused on heating. Accordingly, the ductile metal film 29 enters gaps between the inner surface of the conductor caulking portion 24 and the core wire portions M and between adjacent ones of the core wire portions M by the caulking stress. Hence, the area of contact between the conductor caulking portion 24 and the core wire portions M via the metal film 29 increases, and conductivity improves, thereby making it possible to suppress heat generation.

公开(公告)号：US5612245A

公开(公告)日：1997-03-18

申请号：US434406

申请日：1995-05-03

申请人： Yasuyuki Saito

发明人： Yasuyuki Saito

IPC分类号： H01L21/336 ,  H01L21/265 ,  H01L21/3215 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L21/70

CPC分类号： H01L21/823842 ,  H01L21/32155 ,  Y10S148/034

摘要： An improved method of manufacturing a semiconductor device, especially suitable for a p-channel MOS transistor is disclosed. The method includes the steps of forming a gate oxide film over the surface of a semiconductor substrate in a region where a p-channel MOS transistor is to be formed, forming a polysilicon film over the gate oxide film, in order to construct a gate electrode, forming a film of an amorphous material over the polysilicon film and implanting ions of a p-type impurity, especially elemental boron atoms, into the polysilicon film, through the film of amorphous material.

摘要翻译： 公开了一种改进的制造半导体器件的方法，特别适用于p沟道MOS晶体管。 该方法包括以下步骤：在要形成p沟道MOS晶体管的区域中在半导体衬底的表面上形成栅氧化膜，在栅极氧化膜上形成多晶硅膜，以构成栅电极 在所述多晶硅膜上形成非晶材料的膜，并通过所述非晶材料膜将多晶硅膜中的p型杂质，特别是元素硼原子的离子注入所述多晶硅膜中。

公开(公告)号：US5478172A

公开(公告)日：1995-12-26

申请号：US150136

申请日：1994-02-15

申请人： Tetsuo Oura ,  Mitsuo Sato ,  Yasuyuki Saito ,  Ken-ichi Mase ,  Kenzo Kitazawa ,  Hayao Aoyagi ,  Toru Okuno ,  Toshio Yonezawa ,  Kenro Mitsui

发明人： Tetsuo Oura ,  Mitsuo Sato ,  Yasuyuki Saito ,  Ken-ichi Mase ,  Kenzo Kitazawa ,  Hayao Aoyagi ,  Toru Okuno ,  Toshio Yonezawa ,  Kenro Mitsui

IPC分类号： B65G53/16 ,  B01F3/18 ,  B01F15/02 ,  B01F15/04 ,  B65G53/66 ,  C04B18/14 ,  G01G13/10

CPC分类号： B01F15/0216 ,  B01F15/00194 ,  B01F15/0445 ,  B65G53/66 ,  C04B18/147 ,  B01F3/18 ,  Y02W30/94

摘要： Ultrafine powder is stored in a pneumatic transportation tank (20), and is discharged to a transporting conduit (23) while being fluidized by the pressurized air fed through a fluidizing air port (24). The ultrafine powder is fed to a weigher (30) provided at the other end of the transporting conduit (23), at which the weight of the transported ultrafine powder is weighed by a load cell (31). After the weighed value reaches 90% of a predetermined value, the fed amount of the pneumatic transportation air is reduced, and a bypass regulating valve (38) is adjusted to thus decelerate the transportation. When the weighed value reaches 100% of the predetermined value, the discharge of the ultrafine powder to the transporting conduit (23) is stopped. This method and the apparatus enable the storage, quantitative batch transportation, and automatic weighing of the ultrafine powder such as silica fume.

摘要翻译： PCT No.PCT / JP93 / 00382 Sec。 371日期1994年6月23日 102（e）日期1994年6月23日PCT 1993年3月29日PCT公布。 出版物WO93 / 21092 日期：1993年10月28日。稀释粉末储存在气动输送罐（20）中，并在通过流化空气端口（24）供给的加压空气流化时被排放到输送管道（23）。 超细粉末被送入设置在输送管道（23）的另一端的称重器（30），在该输送管道的另一端通过称重传感器（31）称重输送的超细粉末的重量。 在称重值达到预定值的90％之后，气动输送空气的供给量减少，旁路调节阀（38）被调节，从而使运输减速。 当称重值达到预定值的100％时，超细粉末向输送管道（23）的排放停止。 该方法和装置能够进行诸如硅粉等超细粉末的储存，定量分批运输和自动称重。