公开(公告)号：US20070292778A1

公开(公告)日：2007-12-20

申请号：US11811979

申请日：2007-06-13

Applicant: Kyoung-Yoon Bang ,  Hae-Young Jeong ,  Yong-Hoon Kim ,  Yo-Han Choi ,  Hyung-Joo Lee

Inventor： Kyoung-Yoon Bang ,  Hae-Young Jeong ,  Yong-Hoon Kim ,  Yo-Han Choi ,  Hyung-Joo Lee

IPC: G03C5/00 ,  G06K9/00 ,  G01B11/00

CPC classification number: G01B11/24 ,  G03F7/70625 ,  G06T7/001 ,  G06T2207/30148

Abstract: A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.

Abstract translation: 测量临界尺寸的方法可以包括在衬底上形成对象图案并在衬底上形成多个参考图案，其中多个参考图案中的每一个具有不同的临界尺寸。 可以测量多个参考图案中的每一个的光学特性以为每个参考图案提供相应的测量光学特性，并且可以测量对象图案的光学特性以提供对象图案的测量光学特性。 可以将对象图案的测量光学性质与参考图案的测量光学性质进行比较，并且可以将对象图案的临界尺寸确定为与具有测量的光学性质的参考图案的临界尺寸相同， 最接近被测物体图案的光学特性。 还讨论了相关设备。

公开(公告)号：US07061582B2

公开(公告)日：2006-06-13

申请号：US10460227

申请日：2003-06-13

Applicant: Shun Yong Zinn ,  Yong Hoon Kim ,  Seung Hune Yang

Inventor： Shun Yong Zinn ,  Yong Hoon Kim ,  Seung Hune Yang

IPC: G03B27/54 ,  G03B27/42 ,  G03B27/62

CPC classification number: G03F7/70116 ,  G03B27/54

Abstract: An exposure method and apparatus for use in exposing a photoresist on a semiconductor wafer do not employ an aperture for shaping the exposure light. The exposure apparatus includes a light source unit, a reflecting mirror unit having a micro mirror array (MMA) and a control unit that controls the MMA, and a pattern transfer unit that transfers the pattern of a photomask onto the photoresist. The angles of inclination of the respective mirrors of the MMA are adjusted to reflect incident light in a manner that shapes the incident light. Accordingly, it is possible to form a pattern having the highest degree of resolution and optimum depth of focus (DOF) in the shortest amount of processing time.

Abstract translation: 用于在半导体晶片上曝光光致抗蚀剂的曝光方法和装置不使用用于使曝光光成形的孔。 曝光装置包括光源单元，具有微反射镜阵列（MMA）的反射镜单元和控制MMA的控制单元，以及将光掩模的图案转印到光致抗蚀剂上的图案转印单元。 调整MMA的各反射镜的倾斜角度以使入射光成形的方式反射入射光。 因此，可以以最短的处理时间形成具有最高分辨率和最佳聚焦深度（DOF）的图案。

公开(公告)号：US07029593B2

公开(公告)日：2006-04-18

申请号：US10685032

申请日：2003-10-14

Applicant: Myeong-Cheol Kim ,  Yong-Hoon Kim ,  Jeong-Yun Lee

Inventor： Myeong-Cheol Kim ,  Yong-Hoon Kim ,  Jeong-Yun Lee

IPC: G05D5/00

CPC classification number: H01L22/20 ,  G03F1/36 ,  G03F1/80

Abstract: A method for controlling CD of etch process defines difference between designed dimension and etched dimension as dimensional displacement and defines target value of the dimensional displacement. A plurality of samples are prepared in each group having different exposure ratios. The plurality of samples of each group are etched until etch end point is detected and then over-etched for uniform time interval after detecting the etch end point. Using etch end point and over-etch time, correlation function of the over-etch time to the etch end point time is determined and the over-etch time to the etch end point is determined using the correlation function.

Abstract translation: 用于控制蚀刻工艺的CD的方法将设计尺寸和蚀刻尺寸之间的差异定义为尺寸位移并且定义尺寸位移的目标值。 在具有不同曝光比的每个组中制备多个样品。 每个组的多个样品被蚀刻直到检测到蚀刻终点，然后在检测到蚀刻终点之后过度蚀刻均匀的时间间隔。 使用蚀刻终点和过蚀刻时间，确定到蚀刻终点时间的过蚀刻时间的相关函数，并且使用相关函数确定蚀刻终点的过蚀刻时间。

公开(公告)号：US06576374B1

公开(公告)日：2003-06-10

申请号：US09605429

申请日：2000-06-29

Applicant: Yong-hoon Kim

Inventor： Yong-hoon Kim

IPC: G03F900

CPC classification number: G03F1/30 ,  G03F7/09

Abstract: A mask blank includes a transparent substrate, a light shield layer formed on the upper surface of the transparent substrate, and a multi-functional protective layer formed on the light shield layer. To make a phase shift mask from the blank, the protective layer is patterned, and the light shield layer is etched using the protective layer pattern as an etch mask. The phase shift region is formed by etching a groove in the second region of the substrate while the protective layer pattern protects the light shield layer. Therefore, undesirable residue is prevented from forming at the bottom of the groove constituting the phase shift region. The method also entails patterning a photosensitive layer on the protective layer, and patterning the protective layer by using the patterned photosensitve layer as a mask. In this case, the structure is cleaned so that no residue remains on the exposed portions of the light shield layer.

Abstract translation: 掩模坯料包括透明基板，形成在透明基板的上表面上的遮光层和形成在遮光层上的多功能保护层。 为了从空白制作相移掩模，图案化保护层，并且使用保护层图案作为蚀刻掩模蚀刻遮光层。 通过在衬底的第二区域中蚀刻凹槽来形成相移区域，同时保护层图案保护遮光层。 因此，防止在构成相移区域的槽的底部形成不希望的残留物。 该方法还需要在保护层上图案化感光层，并且通过使用图案化感光层作为掩模来图案化保护层。 在这种情况下，清洁该结构，使得在遮光层的露出部分上不残留残留物。

公开(公告)号：US20010038952A1

公开(公告)日：2001-11-08

申请号：US09295352

申请日：1999-04-21

Applicant: Yong-Hoon Kim

Inventor： YONG-HOON KIM ,  JIN-HONG PARK

IPC: G03F009/00 ,  G03C005/00

CPC classification number: G03F1/29

Abstract: A method of fabricating a phase shift mask is provided in which light shield film patterns for setting a phase shift region and a phase non-shift region are simultaneously formed on a substrate. A groove is formed in the substrate set as the phase shift region. The light shield film pattern, which contacts the groove and is formed on a region of the substrate set as the phase non-shift region, is removed. A phase shift layer is formed between the substrate and the light shield film pattern. In this case, regions set by the light shield film pattern become opposite to when the phase shift layer is not formed. That is, a phase shift region is changed into a phase non-shift region, and the phase non-shift region is changed into the phase shift region. As described above, the phase shift region and the phase non-shift region are simultaneously set when the light shield film pattern is formed, thus preventing the position of the phase shift or non-shift region from being shifted due to sequential formation of the phase shift and non-shift regions.

Abstract translation: 提供一种制造相移掩模的方法，其中在衬底上同时形成用于设置相移区域和相位非移位区域的光屏蔽膜图案。 在衬底组中形成有作为相移区域的沟槽。 除去接触凹槽并形成在作为相位非移位区域的基板的区域上的遮光膜图案。 在基板和遮光膜图案之间形成相移层。 在这种情况下，由遮光膜图案设定的区域与没有形成相移层时相反。 也就是说，相移区域被改变为相位非移位区域，并且相位非移位区域变为相移区域。 如上所述，当形成遮光膜图形时，相移区域和相位非移位区域被同时设置，从而防止相移或非移位区域的位置由于相位的顺序形成而偏移 移位和非移位区域。

公开(公告)号：US06307665B1

公开(公告)日：2001-10-23

申请号：US09273758

申请日：1999-03-22

Applicant: Yong-hoon Kim ,  Hang-woo Lee

Inventor： Yong-hoon Kim ,  Hang-woo Lee

IPC: G02F133

CPC classification number: G02F1/332 ,  G02F1/0316 ,  G02F1/11 ,  G02F1/113

Abstract: An acousto-optic modulator including an ultrasonic medium for controlling light from an optical source through diffraction, two transducers each having one electrode formed on one side thereof, the electrodes being for generating an acousto-elastic wave, and a conductive adhesive layer interposed between the ultrasonic medium and each of the sides of the transducers opposite to the sides on which the electrodes are installed, in order to adhere each of the transducers to the ultrasonic medium.

Abstract translation: 一种声光调制器，包括用于通过衍射控制来自光源的光的超声波介质，两个换能器，每个换能器的一侧形成有一个电极，所述电极用于产生声弹性波，以及导电粘合剂层， 超声波介质和传感器的与安装有电极的侧面相对的侧面，以便将每个换能器粘附到超声波介质上。

公开(公告)号：US6081365A

公开(公告)日：2000-06-27

申请号：US287634

申请日：1999-04-07

Applicant: Yong-hoon Kim

Inventor： Yong-hoon Kim

IPC: G02F1/11 ,  G02F1/33

CPC classification number: G02F1/11 ,  G02F2201/38

Abstract: An acousto-optic modulator comprised of an acousto-optic element coated with an anti-reflection layer, and a method of manufacturing the same, are provided. The acousto-optic modulator includes an anti-reflection layer, comprised of at least two coating layers having different refractive indices, formed on the light incident/emitting surface of an ultrasonic medium for modulating a light beam incident from an optical source.

Abstract translation: 提供了由涂覆有抗反射层的声光元件组成的声光调制器及其制造方法。 该声光调制器包括一个抗反射层，该反射层由至少两层具有不同折射率的涂层形成在超声介质的光入射/发射表面上，用于调制从光源入射的光束。

公开(公告)号：US5900966A

公开(公告)日：1999-05-04

申请号：US911700

申请日：1997-08-15

Applicant: Yong-hoon Kim ,  Hang-woo Lee

Inventor： Yong-hoon Kim ,  Hang-woo Lee

IPC: G02F1/03 ,  G02F1/11 ,  G02F1/33

CPC classification number: G02F1/332 ,  G02F1/0316 ,  G02F1/11 ,  G02F1/113

Abstract: An acousto-optic modulator having an ultrasonic medium for controlling light from a light source by diffracting the light and a transducer portion having electrodes for generating an acoustic wave in the ultrasonic medium, wherein the transducer portion includes two transducers each having an electrode. The AOM is provided with two electrodes by using two transducers, thereby facilitating impedance matching with a driver. The two transducers may be installed so that their polarization directions are opposite to each other, thereby obtaining maximum power transfer to the ultrasonic medium.

Abstract translation: 一种声光调制器，其具有用于通过衍射光来控制来自光源的光的超声介质和具有用于在超声波介质中产生声波的电极的换能器部分，其中，所述换能器部分包括两个具有电极的换能器。 通过使用两个换能器，AOM设置有两个电极，从而有助于与驱动器的阻抗匹配。 可以安装两个换能器使得它们的偏振方向彼此相反，从而获得对超声介质的最大功率传递。