公开(公告)号：US4848678A

公开(公告)日：1989-07-18

申请号：US163552

申请日：1988-03-03

申请人： Atsushi Iwasaki ,  Hideaki Ohta ,  Katsumi Oda ,  Naoshi Tsukada ,  Kiyoshi Sekine

发明人： Atsushi Iwasaki ,  Hideaki Ohta ,  Katsumi Oda ,  Naoshi Tsukada ,  Kiyoshi Sekine

IPC分类号： A23N1/02

CPC分类号： A23N1/02 ,  Y10S241/14

摘要： A method of and an apparatus for crushing raw materials such as fruit and vegetables while heating the raw materials by using a heating medium such as steam or an inactive heating gas in an enclosed device from which the outside air is excluded.

公开(公告)号：US08712268B2

公开(公告)日：2014-04-29

申请号：US13287024

申请日：2011-11-01

申请人： Atsushi Iwasaki

发明人： Atsushi Iwasaki

IPC分类号： G03G15/20

CPC分类号： G03G15/2064 ,  G03G15/2053

摘要： A fixing apparatus is capable of executing a first fixing mode for performing fixing processing at a first pressing force and a second fixing mode for performing fixing processing at a second pressing force that is lower than the first pressing force. When a pressing force applied to a fixing nip portion is set to the second pressing force, all of a first heating member pattern on a heater is contained within a contact region between a belt member and the heater, and at least a portion of a second heating member pattern is disposed outside the contact region, so that consumed power is reduced.

摘要翻译： 定影装置能够执行用于以第一按压力进行定影处理的第一定影模式和用于在低于第一按压力的第二按压力下进行定影处理的第二定影模式。 当施加到定影夹持部分的按压力被设定为第二按压力时，加热器上的所有第一加热构件图案都包含在带构件和加热器之间的接触区域内，并且至少一部分第二加压构件 加热构件图案设置在接触区域的外侧，从而减少了消耗的功率。

公开(公告)号：US20130125810A1

公开(公告)日：2013-05-23

申请号：US13813551

申请日：2011-07-06

申请人： Shou Takashima ,  Yuuichi Miyahara ,  Atsushi Iwasaki ,  Nobuaki Mitamura ,  Susumu Sonokawa

发明人： Shou Takashima ,  Yuuichi Miyahara ,  Atsushi Iwasaki ,  Nobuaki Mitamura ,  Susumu Sonokawa

IPC分类号： C30B15/14 ,  C30B15/30

CPC分类号： C30B15/14 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1068

摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.

摘要翻译： 本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热 气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在 加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部 下部直径。

公开(公告)号：US08445983B2

公开(公告)日：2013-05-21

申请号：US13136004

申请日：2011-07-20

申请人： Atsushi Iwasaki ,  Hiroaki Takasu

发明人： Atsushi Iwasaki ,  Hiroaki Takasu

IPC分类号： H01L27/14

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： A semiconductor device for performing photoelectric conversion of incident light includes a substrate and a well region having different conductivity types. A depletion layer is generated in a vicinity of a junction interface between the substrate and the well region. A first trench has a depth equal to a height up to a top portion of the depletion layer generated on a bottom side of the well region and a width extending to a heavily doped region formed in the well region. A second trench has a depth larger than that of a portion of the depletion layer generated on the bottom side of the well region and a width larger than that of portions of the depletion layer generated on the sides of the well region. The second trench surrounds the first trench so as to confine the depletion layer under the first trench except for a region thereof under the heavily doped region. An insulator is buried into each the first trench and the second trench.

摘要翻译： 用于进行入射光的光电转换的半导体器件包括基板和具有不同导电类型的阱区域。 在衬底和阱区之间的接合界面附近产生耗尽层。 第一沟槽的深度等于在阱区的底侧上产生的耗尽层的顶部的高度，以及延伸到在阱区中形成的重掺杂区的宽度。 第二沟槽的深度大于在阱区底部产生的耗尽层的一部分的深度，并且其宽度大于在阱区域的侧面上产生的耗尽层的部分的宽度。 第二沟槽围绕第一沟槽，以将耗尽层限制在第一沟槽之下，除了在重掺杂区域之下的区域之外。 绝缘体被埋入每个第一沟槽和第二沟槽中。

公开(公告)号：US08365774B2

公开(公告)日：2013-02-05

申请号：US12457903

申请日：2009-06-24

申请人： Kouichi Kamata ,  Atsushi Iwasaki ,  Daisuke Ayame ,  Nobuharu Takahashi

发明人： Kouichi Kamata ,  Atsushi Iwasaki ,  Daisuke Ayame ,  Nobuharu Takahashi

IPC分类号： F16L55/16

CPC分类号： B05D5/00 ,  A61B1/00071 ,  A61B1/0011 ,  A61B1/005 ,  B05D1/42 ,  B05D7/02 ,  B05D2254/02 ,  G02B23/2476

摘要： Around a damaged area of a jacket of a flexible tube, a top coat layer whose adhesion to a polymer layer is weak is peeled off with an adhesive tape. The damaged area and its immediate surrounding area are sanded, and then wiped with ethanol for cleaning. A main agent and a hardening agent are heated and defoamed while being mixed to prepare a repair material. The repair material is applied to the damaged area and the immediate surrounding area. A heat shrink tube is opened along slits in an end portion and covers the flexible tube. The heat shrink tube is shrunk with hot air, pressing the repair material and making it flush with a surface of the jacket. The flexible tube is heated with an electric hot plate to harden the repair material. Thereafter, the heat shrink tube is peeled off from the flexible tube.

摘要翻译： 在柔性管的护套的损坏区域周围，用粘合带剥离其对聚合物层的粘附性弱的面涂层。 受损区域及其周边地区被打磨，然后用乙醇擦拭清洁。 将主剂和硬化剂在混合的同时加热消泡以制备修补材料。 修复材料应用于受损区域和周边地区。 热收缩管沿着端部的狭缝开口并且覆盖柔性管。 热收缩管用热空气收缩，按压修补材料并使其与外套的表面齐平。 柔性管用电热板加热，以硬化修补材料。 此后，将热收缩管从柔性管上剥离。

公开(公告)号：US08343275B2

公开(公告)日：2013-01-01

申请号：US12449878

申请日：2008-02-28

申请人： Yuuichi Miyahara ,  Atsushi Iwasaki ,  Tetsuhiro Oda

发明人： Yuuichi Miyahara ,  Atsushi Iwasaki ,  Tetsuhiro Oda

IPC分类号： C30B15/22

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B15/20 ,  Y10T117/1024 ,  Y10T117/1032

摘要： The present invention resides in a silicon single crystal growth method of pulling up and growing a single crystal from a melt of a silicon raw material in a quartz crucible based on a Czochralski method, wherein the method comprises the steps of: applying a DC voltage between an outer wall of the quartz crucible acts as a positive electrode and a pulling wire or pulling shaft for pulling up the silicon single crystal acts as a negative electrode; and fixing an electric current flowing through the silicon single crystal over a period of time for pulling up the single crystal, to grow the single crystal; as well as a pulling apparatus therefor.

摘要翻译： 本发明在于一种基于Czochralski方法从石英坩埚中的硅原料的熔体中提取和生长单晶的硅单晶生长方法，其中该方法包括以下步骤： 石英坩埚的外壁用作正极，用于拉起单晶硅的牵引线或牵引轴用作负极; 并且在一段时间内固定流过硅单晶的电流，以拉高单晶，生长单晶; 以及其牵引装置。

公开(公告)号：US20120141173A1

公开(公告)日：2012-06-07

申请号：US13304192

申请日：2011-11-23

申请人： Atsushi Iwasaki

发明人： Atsushi Iwasaki

IPC分类号： G03G15/20

CPC分类号： G03G15/2075 ,  G03G15/2025 ,  G03G21/203 ,  G03G2221/1645

摘要： A collecting member that collects suspended particles vaporized from wax includes a flow path and a space, where gas passes along the flow path. The space is connected to the flow path through an opening formed in the flow path. The space extends upstream with respect to a direction of travel of the gas that passes along the flow path. By virtue of this structure, dew condensation in a fixing unit is suppressed while efficiently collecting the suspended particles.

摘要翻译： 收集从蜡蒸发的悬浮颗粒的收集构件包括流动路径和空间，其中气体沿着流动路径通过。 该空间通过形成在流路中的开口连接到流路。 空间相对于沿着流路通过的气体的行进方向向上游延伸。 由于这种结构，在有效地收集悬浮颗粒的同时抑制定影单元中的结露。

公开(公告)号：US20120105707A1

公开(公告)日：2012-05-03

申请号：US13137730

申请日：2011-09-08

申请人： Tsuyoshi Futami ,  Shinichi Ohtsubo ,  Atsushi Iwasaki

发明人： Tsuyoshi Futami ,  Shinichi Ohtsubo ,  Atsushi Iwasaki

IPC分类号： H04N5/232

CPC分类号： H04N5/23212 ,  G02B7/08 ,  G02B7/36 ,  G03B3/10 ,  G03B13/36 ,  G03B2205/0061

摘要： An imaging device includes a detector that repeatedly carries out a series of operation of generating an evaluation value to evaluate the degree of focusing of a position after driving of a lens toward one end part in the drive range of the lens, and detects the evaluation value of a position that is closer to the end part than the position of the evaluation value of the highest degree of focusing and is immediately adjacent or adjacent across a predetermined number of positions to the position of the evaluation value of the highest degree of focusing. The imaging device further includes a drive controller that makes the series of operation be repeatedly carried out toward the other end part in the drive range of the lens, and drives the lens to a position of a degree of focusing not smaller than the detected evaluation value.

摘要翻译： 一种成像装置，包括检测器，其重复地执行一系列产生评估值的操作，以评估透镜在透镜的驱动范围内的一个端部驱动之后的位置的聚焦程度，并且检测评估值 比最高聚焦度的评估值的位置更靠近端部的位置，并且在预定数量的位置处直接相邻或相邻到最高聚焦度的评估值的位置。 成像装置还包括驱动控制器，其使透镜的驱动范围内的另一端部反复进行一系列的操作，并且将透镜驱动到不小于检测到的评价值的聚焦度的位置 。

公开(公告)号：US20110278686A1

公开(公告)日：2011-11-17

申请号：US13136004

申请日：2011-07-20

申请人： Atsushi Iwasaki ,  Hiroaki Takasu

发明人： Atsushi Iwasaki ,  Hiroaki Takasu

IPC分类号： H01L31/0216

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate (1), an n-type well (2) having a predetermined depth and formed in a predetermined region of the p-type substrate (1), and a depletion layer generated at a junction interface between the p-type substrate (1) and the n-type well (2). In the trenches (22) having a depth larger than that of a depletion layer (K1) generated on a bottom side of the n-type well (2) and a width larger than that of depletion layers (K2, K3) generated on sides of the n-type well (2) are provided so as to remove junction interfaces (J2, J3) on the sides of the n-type well (2), and an insulating layer (21) is buried in the trenches (22).

摘要翻译： 提供一种用于进行入射光的光电转换的半导体器件，包括：p型衬底（1），具有预定深度并形成在p型衬底（1）的预定区域中的n型阱（2） ）和在p型衬底（1）和n型阱（2）之间的结界面处产生的耗尽层。 在深度大于在n型阱（2）的底侧产生的耗尽层（K1）的深度的沟槽（22）中，并且宽度大于在侧面产生的耗尽层（K2，K3）的宽度 提供n型阱（2）以便去除n型阱（2）侧面上的结界面（J2，J3），并且绝缘层（21）被埋在沟槽（22）中， 。

公开(公告)号：US08022492B2

公开(公告)日：2011-09-20

申请号：US11709496

申请日：2007-02-22

申请人： Atsushi Iwasaki ,  Hiroaki Takasu

发明人： Atsushi Iwasaki ,  Hiroaki Takasu

IPC分类号： H01L27/14

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14643

摘要： A semiconductor device for performing photoelectric conversion has a semiconductor substrate of a first conductivity type and a well region of a second conductivity type different from the first conductivity type and formed in a predetermined region of the semiconductor substrate. A pair of trenches are formed directly adjacent to respective opposite sides of the well region and have widths greater than those of respective depletion layers generated on the respective opposite sides so as to remove junction interfaces on the respective opposite sides. A depth of each trench from a surface of the semiconductor substrate is greater than that of a depletion layer generated on a bottom side of the well region. An insulating layer is buried in each of the trenches.

摘要翻译： 用于进行光电转换的半导体器件具有第一导电类型的半导体衬底和不同于第一导电类型的第二导电类型的阱区，并且形成在半导体衬底的预定区域中。 一对沟槽直接邻近阱区的相对侧而形成，并且具有大于在各个相对侧上产生的相应耗尽层的宽度的宽度，以便去除相应相对侧上的结界面。 来自半导体衬底的表面的每个沟槽的深度大于在阱区的底侧上产生的耗尽层的深度。 绝缘层被埋在每个沟槽中。