摘要:
An inventive vertical spin-dryer is provided. The inventive spin-dryer may have a shield system positioned to receive fluid displaced from a substrate vertically positioned within the spin-dryer. The shield system may have one or more shields positioned to at least partially reflect fluid therefrom as the fluid impacts the shield. The one or more shields are angled to encourage the flow of fluid therealong, and are preferably hydrophilic to prevent droplets from forming. Preferably the shield system has three shields positioned in a horizontally and vertically staggered manner so that fluid is transferred from a substrate facing surface of a first shield to the top or non-substrate-facing surface of an adjacent shield, etc. A pressure gradient may be applied across the interior of the spin-dryer to create an air flow which encourages fluid to travel along the shield system in a desired direction. A sensor adapted to facilitate desired flywheel position, an openable gripper having a remote actuator, a radiused gripper and a source of inert drying gas are also provided in individual embodiments.
摘要:
A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the same purpose.
摘要:
A gripper assembly is provided which supports a substrate in a vertical orientation. The gripper assembly's end effectors contact only the edge of the substrate. In a first aspect the end effectors each comprise a first pair of opposed surfaces and an second pair of opposed surfaces, all of which simultaneously contact the substrate, holding the substrate in a clamp-type manner. In a second aspect the end effectors each comprise a lower pair of opposed surfaces which simultaneously contact the substrate, and an upper pair of opposed surfaces, larger than the thickness of the substrate, which limit the substrate from horizontal tilting. In the second aspect the end effectors can close at a first elevation where they do not contact the substrate, and can then elevate to gently contact and support the substrate in a pocket-like manner. In a third aspect one of the end effectors has two pairs of opposed surfaces which simultaneously contact the substrate, and the other end effector has two pairs of opposed surfaces which limit the substrate from horizontal tilting. In any aspect no moving parts are required to limit the substrate's vertical and horizontal movement. In a further aspect, fingers to which the end effectors are coupled, are bent so that the gripper is not positioned above the substrate.
摘要:
An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad. A light beam is directed by an optical endpoint detection system to impinge the surface of the substrate. A signal from the optical endpoint detection system is monitored, and if a first endpoint criterion is not detected within a first time window, polishing is stopped at a default polishing time. If the first endpoint criterion is detected within the first time window, the signal is monitored for the second endpoint criterion, and polishing stops if the second endpoint criterion is detected.
摘要:
A carrier head for a chemical mechanical polishing apparatus includes a flexible membrane, the lower surface of which provides a substrate-receiving surface. The carrier head may include a projection which contacts an upper surface of the flexible membrane to apply an increased load to a potentially underpolished region of a substrate. Fluid jets may be used for the purpose.
摘要:
A multi-electrode electrostatic chuck (20) for holding a substrate (42) such as a silicon wafer during processing is described. The electrostatic chuck (20) comprises (i) a first electrode (22), (ii) a second electrode (24), and (iii) an insulator (26) having a lower portion (26a), a middle portion (26b) and an upper portion (26c). The lower portion (26a) of the insulator (26) is below the first electrode (22) and has a bottom surface (28) suitable for resting the chuck (20) on a support (44) in a process chamber (41). The middle portion (26b) of the insulator (26) lies between the first and second electrodes (22), (24). The upper portion (26c) of the insulator (26) is on the second electrode (24), and has a top surface (30) suitable for holding a substrate (42). The first and second electrodes (22, 24) can have a unipolar or bipolar configurations. In operation, the chuck (20) is placed on a support (44) in a process chamber (41) so that the bottom surface (28) of the chuck (20) rests on the support (44). A substrate (42) is placed on the top surface (30) of the chuck (20). When the first electrode (22) of the chuck (20) is electrically biased with respect to the support (44), a first electrostatic force holds the chuck (20) onto the support (44). When the second electrode (24) of the chuck (20) is electrically biased with respect to the substrate (42) placed on the chuck (20), a second electrostatic force holds the substrate (42) to the chuck (20).
摘要:
A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: 1) scanning a semiconductor wafer with a narrowly focused laser beam; 2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; 3) parking the beam at the preferred spot; and 4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly responsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.
摘要:
A method facilitates the display of a filtered signal which represents the variation of light intensity in a processing chamber over time. The filtered signal filters out the effects of a magnetic field which causes plasma within the processing chamber to rotate. The magnetic field is generated by a signal with a period T. Light intensity within the process chamber is detected to produce a voltage signal with a voltage amplitude which varies based on the light intensity within the process chamber. The voltage amplitude of the voltage signal is digitally sampled at a sampling interval to obtain sample values. Running averages of a preselected number of sample values are calculated. The period T is set equal to the preselected number of sample values times the sampling interval times an integer. For each newly displayed running average, a rectangular box may be superimposed over a graph of the running averages in order to graphically display changes in slope. The computer is programmed to look for an anticipated sequence of slopes.
摘要:
A method for endpoint detection in a semiconductor wafer etching system characterized by the steps of: (1) scanning a semiconductor wafer with a narrowly focussed laser beam; (2) analyzing a reflected portion of the beam to determine a preferred parking spot on a preferred flat area of the wafer; (3) parking the beam at the preferred spot; and (4) analyzing the reflected portion of the beam to determine when the preferred flat area has been etched through. The beam spot of the laser beam is smaller than the width of the preferred flat area to eliminate noise generated at the transition boundaries of the flat area. Preferably, the wafer is scanned several times along the same beam path to permit the comparison of several scans to determine the preferred parking spot. The apparatus includes a beam forming assembly; a scanning assembly which causes the laser beam to scan across the wafer; a detection assembly reponsive to a portion of the laser beam which is reflected off of the wafer; and a controller which operates the laser and the scanning assembly and which is responsive to an output of the detection assembly. When output of the detection assembly indicates a cessation of the characteristic etching curve, the controller develops an endpoint detection signal which can automatically shut down the etching system.
摘要:
A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.