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    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    81.
    发明申请
    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    作为薄膜晶体管的N型半导体材料的ARYL DICARBOXYLIC ACID DIIMIDAZOLE-based COMPOUNDS

    公开(公告)号：US20100178728A1

    公开(公告)日：2010-07-15

    申请号：US12731191

    申请日：2010-03-25

    Applicant: Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    Inventor： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC: H01L51/40

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    Abstract: A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.

    Abstract translation: 制造薄膜半导体器件的方法包括以下步骤，但不一定按照所述顺序。 首先，将有机半导体材料的薄膜沉积在基板上。 这种有机半导体材料薄膜包括有机半导体材料，其包括一种或多种权利要求1的芳基二甲基二咪唑基化合物，使得该膜表现出大于0.005cm 2 / Vs的场效应电子迁移率。 然后，该工艺包括形成间隔开的源电极和漏电极，其中源极电极和漏极电极与n沟道半导体膜分离并与其电连接。 然后形成与半导体材料间隔开的栅电极。 可以将一个或多个薄膜半导体器件（或晶体管）并入电子器件中。

    CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    82.
    发明申请
    CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    作为N型半导体薄膜薄膜晶体管的配置控制N，N'-二烷基取代的基于萘二甲酸的四嵌段二胺二异氰酸酯化合物

    公开(公告)号：US20080135833A1

    公开(公告)日：2008-06-12

    申请号：US11567954

    申请日：2006-12-07

    Applicant: Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    IPC: H01L51/40 ,  C07D471/22

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

    N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
    87.
    发明申请
    N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors 有权
    N，N'-二（苯基烷基）取代的苝基四羧酸二酰亚胺化合物作为薄膜晶体管的n型半导体材料

    公开(公告)号：US20060134823A1

    公开(公告)日：2006-06-22

    申请号：US11021739

    申请日：2004-12-21

    Applicant: Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    Inventor： Deepak Shukla ,  Diane Freeman ,  Shelby Nelson

    IPC: H01L51/40

    CPC classification number: H01L51/0053 ,  B82Y30/00 ,  C09B5/62 ,  H01L51/0545 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 薄膜晶体管包括一层有机半导体材料，其包含四羧酸二酰亚胺3,4,9,10-苝基化合物，其具有连接到每个酰亚胺氮原子上的取代或未取代的苯基烷基。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

    Vehicle driving force control method
    89.
    发明申请
    Vehicle driving force control method 审中-公开
    车辆驱动力控制方法

    公开(公告)号：US20050038588A1

    公开(公告)日：2005-02-17

    申请号：US10641411

    申请日：2003-08-14

    Applicant: Deepak Shukla

    Inventor： Deepak Shukla

    IPC: B60T8/1755 ,  G06F19/00

    CPC classification number: B60T8/1755 ,  B60T2210/12

    Abstract: A method of controlling the wheel speed of a vehicle wheel supported by a surface to achieve a desired vehicle acceleration, desired yaw rate or a desired vehicle velocity. The method receives sensor readings indicative of a vehicle state and operator input. From the received sensor readings a current wheel speed and a desired wheel speed are determined. A torque is applied to the wheel to correct for any wheel speed error, the difference between the desired wheel speed and the current wheel speed. To determine the amount of torque that may be applied to the vehicle wheel while preventing the wheel from slipping, a friction coefficient between the wheel and the surface may be determined.

    Abstract translation: 一种控制由表面支撑的车轮的车轮速度以实现期望的车辆加速度，期望的偏航率或期望的车辆速度的方法。 该方法接收指示车辆状态和操作员输入的传感器读数。 从接收到的传感器读数中确定当前车轮速度和期望车轮速度。 向车轮施加扭矩以校正任何车轮速度误差，期望车轮速度与当前车轮速度之间的差异。 为了确定可能施加到车轮的扭矩的量，同时防止车轮滑动，可以确定车轮和表面之间的摩擦系数。

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