公开(公告)号：US20100038523A1

公开(公告)日：2010-02-18

申请号：US12559307

申请日：2009-09-14

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Ashish Shah ,  Howard E. Rhodes

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Ashish Shah ,  Howard E. Rhodes

IPC分类号： H01J40/14 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643

摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and an embedded layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the front side of the semiconductor substrate above the optical sensor region. The embedded focusing layer is disposed on the backside of the semiconductor substrate in a Backside Illuminated (BSI) image sensor, supported by a support grid, or a support grid composed of the semiconductor substrate.

摘要翻译： 图像传感器包括光学传感器区域，电介质和金属层的堆叠以及嵌入层。 光学传感器设置在半导体衬底内。 电介质层和金属层堆叠在光学传感器区域上方的半导体衬底的前侧。 嵌入式聚焦层设置在由支撑栅格支撑的背面照明（BSI）图像传感器或由半导体衬底组成的支撑栅格上的半导体衬底的背面。

公开(公告)号：US20090200626A1

公开(公告)日：2009-08-13

申请号：US12260019

申请日：2008-10-28

申请人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L31/0232

CPC分类号： H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

摘要： A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

摘要翻译： 背面照明成像传感器包括垂直堆叠传感器，其通过使用不同的硅层在堆叠（或单独的堆叠）内的不同级别形成光电二极管来减少串扰，以检测不同的颜色。 形成蓝光，绿光和红光检测硅层，蓝光检测层位于最靠近传感器背面的位置，红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层（ARC）层，以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层，以提高检测红光的效率。

公开(公告)号：US20090200586A1

公开(公告)日：2009-08-13

申请号：US12142678

申请日：2008-06-19

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14643

摘要： A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.

摘要翻译： 背面照明成像传感器包括半导体层，金属互连层和硅化物光反射层。 半导体层具有前表面和后表面。 在半导体层内形成包括光电二极管区域的成像像素。 金属互连层电耦合到光电二极管区域，并且硅化物光反射层耦合在金属互连层和半导体层的前表面之间。 在操作中，光电二极管区域从半导体层的背面接收光，其中接收的光的一部分通过光电二极管区域传播到硅化物光反射层。 硅化物光反射层被配置为反射从光电二极管区域接收的光的部分。

公开(公告)号：US20130113969A1

公开(公告)日：2013-05-09

申请号：US13288880

申请日：2011-11-03

申请人： Sohei Manabe ,  Keh-Chiang Ku ,  Vincent Venezia ,  Hsi-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

发明人： Sohei Manabe ,  Keh-Chiang Ku ,  Vincent Venezia ,  Hsi-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14641

摘要： Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.

摘要翻译： 用于提高图像传感器中像素结构的完整容量的技术和机制。 在一个实施例中，图像传感器的第一像素结构包括植入区域，其中植入区域的偏斜对应于植入角度，并且图像传感器的第二像素结构包括传输门。 在另一个实施例中，第一像素结构的注入区域与第二像素结构的传输门的偏移对应于植入角度。

公开(公告)号：US08228411B2

公开(公告)日：2012-07-24

申请号：US13327592

申请日：2011-12-15

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

公开(公告)号：US20120086844A1

公开(公告)日：2012-04-12

申请号：US13327592

申请日：2011-12-15

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

公开(公告)号：US20090200624A1

公开(公告)日：2009-08-13

申请号：US12053476

申请日：2008-03-21

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

摘要翻译： 背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。 光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。 像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。 像素电路的至少一部分与光电二极管区域重叠。

公开(公告)号：US08101978B2

公开(公告)日：2012-01-24

申请号：US12053476

申请日：2008-03-21

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

摘要翻译： 背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。 光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。 像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。 像素电路的至少一部分与光电二极管区域重叠。

公开(公告)号：US09236411B2

公开(公告)日：2016-01-12

申请号：US13197568

申请日：2011-08-03

申请人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

发明人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC分类号： H01L29/49 ,  H01L27/146

CPC分类号： H01L27/14621 ,  H01L27/1464 ,  H01L27/14685

摘要： Embodiments are disclosed of an apparatus comprising a color filter arrangement including a set of color filters. The set of color filters includes a pair of first color filters, each having first and second hard mask layers formed thereon, a second color filter having the first hard mask layer formed thereon, and a third color filter having no hard mask layer formed thereon. Other embodiments are disclosed and claimed.

摘要翻译： 公开了一种包括包括一组滤色器的滤色器装置的装置的实施例。 该组滤色器包括一对第一和第二硬掩模层形成在其上的第一滤色器，其上形成有第一硬掩模层的第二滤色器和不形成硬掩模层的第三滤色器。 公开和要求保护其他实施例。

公开(公告)号：US08952309B2

公开(公告)日：2015-02-10

申请号：US13252883

申请日：2011-10-04

申请人： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

发明人： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14685 ,  Y10T29/49885

摘要： Techniques and architectures for providing a coating for one or more micro-lenses of a pixel array. In an embodiment, a pixel element includes a micro-lens and a coating portion extending over a surface of the micro-lens, where a profile of the coating portion is super-conformal to, or at least conformal to, a profile of the micro-lens. In another embodiment, the coating portion is formed at least in part by orienting the surface of the micro-lens to face generally downward with the direction of gravity, the orienting to allow a fluid coating material to flow for formation of the coating portion.

摘要翻译： 用于为像素阵列的一个或多个微透镜提供涂层的技术和架构。 在一个实施例中，像素元件包括微透镜和在微透镜的表面上延伸的涂层部分，其中涂层部分的轮廓与微观透镜的轮廓超共形或至少共形 -镜片。 在另一个实施例中，涂覆部分至少部分地通过使微透镜的表面定向以与重力方向大致向下的方式形成，定向以允许流体涂覆材料流动以形成涂覆部分。