Reflective projection lens for EUV-photolithography
    81.
    发明授权
    Reflective projection lens for EUV-photolithography 有权
    EUV光刻用反射投影透镜

    公开(公告)号:US06927901B2

    公开(公告)日:2005-08-09

    申请号:US10208842

    申请日:2002-08-01

    摘要: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

    摘要翻译: 用于使用来自极紫外(EUV)光谱区域的电磁辐射将布置在物平面中的物体图案成像到图像平面的投影透镜在其物平面和图像平面之间具有限定投影透镜的光轴的成像反射镜,并且 有反光涂层。 这些反射镜中的至少一个具有梯度反射涂层,其具有相对于涂覆轴线旋转对称的膜厚度梯度,其中该涂覆轴相对于投影透镜的光轴被倾斜地布置。 提供至少一个中心,渐变,反射涂层允许设计投影透镜,允许高度均匀的场照度,并结合高透光率。

    Imaging optical system and projection exposure system including the same
    84.
    发明授权
    Imaging optical system and projection exposure system including the same 有权
    成像光学系统和投影曝光系统包括相同的

    公开(公告)号:US08605255B2

    公开(公告)日:2013-12-10

    申请号:US12767627

    申请日:2010-04-26

    IPC分类号: G03B27/54 G03B27/32

    摘要: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.

    摘要翻译: 成像光学系统具有多个反射镜。 这些图像将物体平面中的对象场映射成图像平面中的图像场。 在成像光学系统中,成像光在镜面反射面上的最大入射角与成像光学系统的像侧数值孔径之比小于33.8°。 这可以导致成像光学系统,其为反射镜的反射涂层提供了良好的条件,通过该成像光学系统可以实现低反射损失,用于在通过成像光学系统时成像光,特别是甚至在EUV范围的波长 小于10nm。

    IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICAL SYSTEM OF THIS TYPE
    85.
    发明申请
    IMAGING OPTICAL SYSTEM AND PROJECTION EXPOSURE INSTALLATION FOR MICROLITHOGRAPHY WITH AN IMAGING OPTICAL SYSTEM OF THIS TYPE 审中-公开
    成像光学系统和投影曝光安装与这种类型的成像光学系统的微型计算

    公开(公告)号:US20120069312A1

    公开(公告)日:2012-03-22

    申请号:US13197065

    申请日:2011-08-03

    IPC分类号: G03F7/20 G03B27/70 G02B17/06

    摘要: An imaging optical system has a plurality of mirrors which image an object field in an object plane in an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The result is an imaging optical system that provides a combination of small imaging errors, manageable production and a good throughput for the imaging light.

    摘要翻译: 成像光学系统具有多个反射镜,其对图像平面中的图像场中的物体平面中的物体场进行成像。 成像光学系统具有光瞳遮蔽。 在物场和图像场之间的成像光的光束路径中的最后一个反射镜具有用于成像光通过的通孔。 在物场和图像场之间的成像光的光束路径中的成像光学系统的倒数第二反射镜没有通过成像光通过的通孔。 结果是成像光学系统提供成像光的小成像误差,可管理的生产和良好的吞吐量的组合。

    MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE
    87.
    发明申请
    MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM AND METHOD FOR MANUFACTURING A DEVICE 审中-公开
    微型投影光学系统及其制造方法

    公开(公告)号:US20090052073A1

    公开(公告)日:2009-02-26

    申请号:US12233384

    申请日:2008-09-18

    IPC分类号: G02B17/06

    摘要: In some embodiments, a catoptric microlithgraphy projection optical system includes a plurality of reflective optical elements arranged to image radiation from an object field in an object plane to an image field in an image plane. The image field can have a size of at least 1 mm×1 mm. This optical system can have an object-image shift (OIS) of about 75 mm or less. Metrology and testing can be easily implemented despite rotations of the optical system about a rotation axis. Such a catoptric microlithgraphy projection optical system can be implemented in a microlithography tool. Such a microlithography tool can be used to produce microstructured components.

    摘要翻译: 在一些实施例中,反射微结构投影光学系统包括多个反射光学元件,其被布置成将来自物体平面中的物场的辐射图像映像到图像平面中的图像场。 图像场可以具有至少1mm×1mm的尺寸。 该光学系统可以具有约75mm或更小的物体图像偏移(OIS)。 尽管光学系统围绕旋转轴旋转,但可以容易地实现测量和测试。 这种反射式微立方体投影光学系统可以在微光刻工具中实现。 这种微光刻工具可用于生产微结构化组件。

    MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM, TOOL AND METHOD OF PRODUCTION
    88.
    发明申请
    MICROLITHOGRAPHY PROJECTION OPTICAL SYSTEM, TOOL AND METHOD OF PRODUCTION 有权
    微电子投影光学系统,工具和生产方法

    公开(公告)号:US20090051890A1

    公开(公告)日:2009-02-26

    申请号:US12235957

    申请日:2008-09-23

    IPC分类号: G03B27/54

    摘要: A microlithography projection optical system is disclosed. The system can include a plurality of optical elements arranged to image radiation having a wavelength λ from an object field in an object plane to an image field in an image plane. The plurality of optical elements can have an entrance pupil located more than 2.8 m from the object plane. A path of radiation through the optical system can be characterized by chief rays having an angle of 3° or more with respect to the normal to the object plane. This can allow the use of face shifting masks as objects to be imaged, in particular for EUV wavelengths.

    摘要翻译: 公开了一种微光刻投影光学系统。 该系统可以包括多个光学元件,其布置成将具有波长λ的辐射从物体平面中的物体场图像映像到图像平面中的图像场。 多个光学元件可以具有距离物面大于2.8μm的入射光瞳。 通过光学系统的辐射路径的特征在于主要光线相对于物平面的法线具有3°或更大的角度。 这可以允许使用面部移动掩模作为要成像的对象,特别是对于EUV波长。

    Reflective projection lens for EUV-photolithography
    89.
    发明授权
    Reflective projection lens for EUV-photolithography 有权
    EUV光刻用反射投影透镜

    公开(公告)号:US07450301B2

    公开(公告)日:2008-11-11

    申请号:US11723831

    申请日:2007-03-22

    IPC分类号: G02B17/00 G03B27/72 G21K5/00

    摘要: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

    摘要翻译: 用于使用来自极紫外(EUV)光谱区域的电磁辐射将布置在物平面中的物体图案成像到图像平面的投影透镜在其物平面和图像平面之间具有限定投影透镜的光轴的成像反射镜,并且 有反光涂层。 这些反射镜中的至少一个具有梯度反射涂层,其具有相对于涂覆轴线旋转对称的膜厚度梯度,其中该涂覆轴相对于投影透镜的光轴被倾斜地布置。 提供至少一个中心,渐变,反射涂层允许设计投影透镜,允许高度均匀的场照度,并结合高透光率。