摘要:
A current limiting device using a superconductor limits a current flowing throu A c5 V pV:a current limiting coil, which mangetically couples to the superconductor. A control coil is provided to magnetically couple with the current limiting coil when the superconductor is switched to a normal conduction state. A variable control impedance is connected to the control coil to adjust a control current flowing through the control coil. The current limiting impedance value of the current limiting coil is adjusted by the value of the control impedance to obtain an adjustable value of the current flowing through the current limiting coil.
摘要:
A microscope comprises a cantilever having a distal end equipped with an electrically conductive probe allowing current to flow and having a fine tip whose voltage is controllable, a position control mechanism for controlling position of a sample with respect to a base end of the cantilever, a small displacement measuring mechanism for measuring a deflection amount of the cantilever, and a deflection control mechanism for controlling deflection of the cantilever so as to adjust a distance between the fine tip of the probe and the sample. A method for measuring surfaces using this novel microscope comprises steps of: maintaining deflection of the cantilever at a constant value by using the small displacement measuring mechanism and the deflection control mechanism; applying a constant voltage between the electrically conductive probe and the sample; scanning the sample along surface of the sample with the probe, while a tunneling current is maintained at a constant value by using the position control mechanism; and measuring a control amount of the position control mechanism in a direction vertical to the sample and a control amount of the deflection control mechanism.
摘要:
A method of making a cantilever stylus for an atomic force microscope comprises forming a film on a surface of a substrate, the film comprising a stylus material that is different from the material of the substrate. A resist thin film of a material different from the stylus material is formed on the surface of the stylus material so as to have a tip. The stylus material is then etched with an isotropic etching technique to a depth of etching greater than the radius of curvature of the tip of the resist film so that the stylus material, having two opposite principal surfaces, has a tip formed on one of the principal surfaces with a radius of curvature less than 0.1 .mu.m which protrudes beyond a tip of the other principal surface. At least the resist thin film and the substrate at the tips of the principal surfaces of the stylus material are then removed.
摘要:
A field-emission type switching device includes a substrate formed with a recess having a straight edge and serrated edge opposite to the straight edge. A gate electrode is formed at the bottom of the recess. An emitter electrode is provided over the substrate and formed with a serrated edge which is slightly off alignment with the serrate edge of the recess so as to provide an emitter overhanging portion overhanging the recess. Similarly, a collector electrode is provided over the substrate and formed with a straight edge which is slightly off alignment with the straight edge of the recess so as to provide a collector overhanging portion overhanging the recess. The emitter and collector electrodes are disposed in one plane and the gate electrode is disposed in another plane below the one plane.