公开(公告)号：US10914874B2

公开(公告)日：2021-02-09

申请号：US16793740

申请日：2020-02-18

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  John Heck ,  Ramon Cancel Olmo ,  Richmond Hicks ,  Olga Gorbounova

IPC: G02B5/02 ,  G02B6/42 ,  G02B6/30

Abstract: Disclosed herein are display and photonic devices utilizing metasurfaces. An optical device comprising an optical component and an optical transmission medium is disclosed. A waveguide couples the optical component and the optical transmission medium. A metasurface is disposed on an end of the waveguide and arranged to increase an optical coupling between the waveguide and the optical transmission medium. Additionally, a display comprising a number of light emitting elements and a metasurface for each of the light emitting elements. The metasurface arranged to eliminate screen door effect in virtual reality display systems.

公开(公告)号：US10809623B2

公开(公告)日：2020-10-20

申请号：US16555121

申请日：2019-08-29

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Richmond Hicks

IPC: G03F7/20 ,  H01L33/58 ,  G02B1/00 ,  G06T11/00 ,  G02B27/01 ,  H01L25/075 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  C23C16/50 ,  C23C14/34 ,  B82Y20/00 ,  H01L51/52

Abstract: Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

公开(公告)号：US20200327843A1

公开(公告)日：2020-10-15

申请号：US16914309

申请日：2020-06-27

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Vishal Ravindra Sinha ,  Marko Bartscherer

IPC: G09G3/20 ,  G09G3/32

Abstract: A display device includes light-emitting diode (LED) devices to implement an array of pixels, where pixels in the array are each associated with a respective first set of LED devices to implement a first set of sub-pixels and a respective second set of LED devices to implement a redundant second set of sub-pixels for the corresponding pixel. Controller circuitry is provided to alternatively enable the first set of LED devices or the second set of LED device to implement the sub-pixels of the corresponding pixel.

公开(公告)号：US10784325B2

公开(公告)日：2020-09-22

申请号：US15390366

申请日：2016-12-23

Applicant: INTEL CORPORATION

Inventor： Khaled Ahmed ,  Prashant Majhi ,  Kunjal Parikh

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12

Abstract: A thin film transistor (TFT) to control a light emitting diode (LED) or an organic light emitting diode (OLED) includes a channel region configured as a saddle channel extending between the drain region and the source region of the TFT. The saddle channel is formed by deposition of channel material on a fin structure, and the contour of the saddle channel is defined by the contour of the fin structure. Deposition of the channel material for the saddle channel may be performed by: (i) atomic layer deposition (ALD) of amorphous silicon; (ii) ALD of amorphous silicon followed by annealing to form polycrystalline silicon; or (iii) deposition of indium gallium zinc oxide (IGZO) material by one of ALD, plasma-enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), or plasma-enhanced chemical vapor deposition (PECVD).

公开(公告)号：US20190131345A1

公开(公告)日：2019-05-02

申请号：US16233787

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Kunjal Parikh ,  Peter L. Chang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/18

Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

公开(公告)号：US10217729B2

公开(公告)日：2019-02-26

申请号：US15283102

申请日：2016-09-30

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Kunjal ShyamKumar Parikh ,  Peter Chang

IPC: H01L25/13 ,  H01L25/075 ,  H01L21/683 ,  H01L23/00 ,  H01L25/00

Abstract: Embodiments of the invention include systems and methods for transferring micro LEDs. In an embodiment, the system for transferring micro LEDs, may include a donor substrate bank that is capable of supporting a plurality of donor substrates on which a plurality of micro LEDs are formed. In an embodiment, the donor substrate bank is moveable in the X, Y, and Z directions. In an embodiment, the system may also include a host substrate table that is capable of supporting a host substrate. The host substrate may include a plurality of segments. In an embodiment, the host substrate table is moveable in the X, Y, and Z directions. Embodiments of the invention may also include an array of macro transfer heads. In an embodiment, each macro transfer head may include a plurality of micro transfer heads.

公开(公告)号：US10158833B2

公开(公告)日：2018-12-18

申请号：US15495498

申请日：2017-04-24

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Richmond Hicks ,  Nilesh V. Shah

IPC: H01L27/20 ,  H04N9/097 ,  H04N5/232 ,  H04N5/235 ,  H04N9/09 ,  H04N5/265 ,  H04N5/33

Abstract: Imaging systems providing high resolution, low light images with significant dynamic range are disclosed. The improvements to photo imaging sensors providing low costs and yet higher performance sensors may be obtained an enhanced photosensor generating a single color channel image per photosensor. The single color channel image contains luminence values corresponding to light focused onto the photosensor. The plurality of photosensors are constructed using Indium gallium nitride (InGaN) nanowire structures and nanopyramid structures used in cells within an array of cells. Photosensors may be constructed as single color imaging devices as well as multi-color devices. The generation of various color channel images are controlled using metasurface filter structures as well as color filter layers setting a wavelength for absorbed light by controlling a concentration of indium gallium nitride (InGaN) within the color filter layers.

公开(公告)号：US10153401B2

公开(公告)日：2018-12-11

申请号：US15381937

申请日：2016-12-16

Applicant: Intel Corporation

Inventor： Khaled Ahmed

IPC: H01L33/44 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L23/66 ,  H01L33/00 ,  H01L31/0352

Abstract: LED structures passivated with a III-N passivation material including Al. The III-N passivation material may reduce nonradiative recombination, reducing leakage current of an LED structure, and/or improve luminous efficacy. An LED structure may include III-N materials in a multiple quantum well (MQW) structure, and the III-N passivation material including Al may have a wider bandgap than any of the materials in the MQW structure. The III-N passivation material may be AlN, which can be deposited as a binary compound at low temperatures to maintain quality of the MQW structure. The III-N passivation material can be selectively deposited on a sidewall of at least the MQW structure. The III-N passivation material can be unselectively deposited over an LED structure and then etched to form a III-N spacer along a sidewall of at least the MQW structure. Energy efficient RGB micro(μ) LED emissive displays may include passivated LED structures.

公开(公告)号：US20180331227A1

公开(公告)日：2018-11-15

申请号：US15772762

申请日：2015-12-22

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Prashant Majhi

IPC: H01L29/786 ,  H01L29/66

Abstract: Substrates, assemblies, and techniques for enabling a p-channel oxide semiconductor. For example, some embodiments can include an oxide semiconductor, where the oxide semiconductor includes an indium gallium zinc oxide (IGZO) sulfur alloy as a semiconducting material. The semiconducting material can be included in a thin-film-transistor that includes one or more p-channels.

公开(公告)号：US20180295295A1

公开(公告)日：2018-10-11

申请号：US15479722

申请日：2017-04-05

Applicant: Intel Corporation

Inventor： Richmond Hicks ,  Khaled Ahmed

IPC: H04N5/33 ,  H01L27/146 ,  H04N9/04 ,  H04N5/374 ,  H04N9/097

Abstract: Per-pixel performance is improved in a combined visible and ultraviolet image sensor array such as for a hyperspectral camera. In one example, an array of photodetectors is formed on a silicon substrate. A subset of the photodetectors are improved to improve sensitivity to ultraviolet light, and the photodetector array is finished to form an image sensor.