Radio receiver with selectively disabled equalizer
    81.
    发明申请
    Radio receiver with selectively disabled equalizer 失效
    无线电接收机,有选择性地禁用均衡器

    公开(公告)号:US20070030932A1

    公开(公告)日:2007-02-08

    申请号:US11198602

    申请日:2005-08-05

    申请人: Jie Su Yong Wang

    发明人: Jie Su Yong Wang

    IPC分类号: H04B1/10

    CPC分类号: H04B1/1027

    摘要: A controllable equalizer is arranged to be automatically and selectively disabled and is configured to operate in a frequency modulated (FM) radio receiver. The controllable equalizer includes an equalizer (115) that is configured to perform an equalization algorithm, e.g., CMA, that relies on a predetermined distribution for a received signal, where the received signal is available from the FM radio receiver and a spurious signal detector (123) that is configured to determine whether a spurious signal is present in the received signal and to disable the equalizer when the spurious signal is present. A method (300) of automatically and selectively disabling an equalizer operating in a frequency modulated (FM) radio receiver includes performing an equalization algorithm (307) on an FM received signal, the equalization algorithm relying on a predetermined distribution of the FM received signal, determining whether a spurious signal is present (309) in the FM received signal; and disabling the equalizer (317) when the spurious signal is present in the FM received signal.

    摘要翻译: 可控均衡器被布置成自动和选择性地禁用并且被配置为在调频(FM)无线电接收机中操作。 可控均衡器包括均衡器(115),其被配置为执行均衡算法,例如CMA,其依赖于接收信号的预定分布,其中接收信号可从FM无线电接收机和伪信号检测器( 123),其被配置为确定寄生信号是否存在于接收信号中,并且当寄生信号存在时禁止均衡器。 自动和选择性地禁用在调频(FM)无线电接收机中操作的均衡器的方法(300)包括对FM接收信号执行均衡算法(307),所述均衡算法依赖于FM接收信号的预定分布, 确定FM接收信号中是否存在杂散信号(309); 以及当FM接收信号中存在杂散信号时禁止均衡器(317)。

    Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition
    82.
    发明申请
    Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition 有权
    通过金属有机化学气相沉积对准Algainn纳米线的外延生长

    公开(公告)号:US20060073680A1

    公开(公告)日:2006-04-06

    申请号:US11207226

    申请日:2005-08-19

    申请人: Jung Han Jie Su

    发明人: Jung Han Jie Su

    IPC分类号: H01L21/36

    摘要: Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

    摘要翻译: 在这项工作中证明了III-Nitride纳米线的高度排列和排列的外延。 通过透射电子显微镜对GaN / AlN树干/分支纳米结构的详细研究,将M轴识别为优选的纳米线生长方向。 晶体选择性可用于实现纳米线生长的空间和取向控制。 在M面AlN衬底上制备垂直取向(Al)GaN纳米线。 从GaN六边形台面或岛的M面侧延伸出的水平排列的纳米线为自对准纳米线器件,互连和网络提供了新的机遇。