Image forming system having remotely accessed shared image forming apparatus
    83.
    发明授权
    Image forming system having remotely accessed shared image forming apparatus 有权
    图像形成系统具有远程访问的共享图像形成装置

    公开(公告)号:US09207885B2

    公开(公告)日:2015-12-08

    申请号:US14517978

    申请日:2014-10-20

    申请人: Makoto Sasaki

    发明人: Makoto Sasaki

    IPC分类号: G06F3/12 H04N1/32 H04N1/00

    摘要: An image forming system includes mobile terminals and image forming apparatuses, in which one image forming apparatus receives setting information to be used in order to use the image forming apparatus, the setting information being stored in one mobile terminal and able to be transmitted to another mobile terminal that will use another image forming apparatus based on the setting information. The one image forming apparatus determines whether the setting information is to be changed based on a comparison between the ability of the image forming apparatuses and, when determining that the setting information is to be changed, changes the setting information and send the changed setting information to the other mobile terminal.

    摘要翻译: 图像形成系统包括移动终端和图像形成装置,其中一个图像形成装置接收要使用的设置信息以使用图像形成装置,该设置信息存储在一个移动终端中并能够被发送到另一个移动装置 终端,其将基于设置信息使用另一图像形成装置。 一个图像形成装置基于图像形成装置的能力之间的比较来确定是否要改变设置信息,并且当确定要改变设置信息时,改变设置信息并将改变的设置信息发送到 另一个移动终端。

    Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
    84.
    发明授权
    Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot 有权
    碳化硅晶体锭,碳化硅晶片,以及碳化硅晶锭的制造方法

    公开(公告)号:US08642154B2

    公开(公告)日:2014-02-04

    申请号:US13475360

    申请日:2012-05-18

    IPC分类号: B32B3/02

    CPC分类号: C30B23/00 C30B29/36

    摘要: A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.

    摘要翻译: 具有大于或等于4英寸的表面,具有大于或等于1×1015原子/ cm3且小于或等于1×1020原子/ cm3的n型掺杂剂浓度的碳化硅晶锭,金属原子 浓度大于或等于1×1014原子/ cm3且小于或等于1×1018原子/ cm3,并且不超过n型掺杂剂浓度,并且小于或等于1×1017原子的金属原子浓度梯度 /(cm 3·mm),使用该锭制造的碳化硅单晶晶片和制造碳化硅晶体锭的方法。

    Bio-Hybrid Material, Production Method Therefor, and Stent
    86.
    发明申请
    Bio-Hybrid Material, Production Method Therefor, and Stent 有权
    生物混合材料,其生产方法和支架

    公开(公告)号:US20130245240A1

    公开(公告)日:2013-09-19

    申请号:US13989279

    申请日:2011-11-24

    IPC分类号: C07K17/14 A61F2/82

    摘要: Provided is a bio-hybrid material that does not cause elution of nickel ions and has an excellent endothelialization ability, a production method therefor, and a stent. The bio-hybrid material (101) used includes an alloy part (11) free of Ni, an organic acid (12) having two or more active esters, and a cytokine (13). The alloy part (11) free of Ni forms an ester bond with the organic acid (12), and the organic acid (12) and the cytokine (13) are immobilized via an amide bond.

    摘要翻译: 提供了不引起镍离子洗脱并具有优异的内皮化能力的生物混合材料,其制备方法和支架。 使用的生物混合材料(101)包括不含Ni的合金部分(11),具有两种以上活性酯的有机酸(12)和细胞因子(13)。 不含Ni的合金部分(11)与有机酸(12)形成酯键,有机酸(12)和细胞因子(13)通过酰胺键固定。

    COMMUNICATION TERMINAL AND INFORMATION PROVIDING METHOD
    87.
    发明申请
    COMMUNICATION TERMINAL AND INFORMATION PROVIDING METHOD 有权
    通信终端和信息提供方法

    公开(公告)号:US20130225115A1

    公开(公告)日:2013-08-29

    申请号:US13879832

    申请日:2012-06-26

    IPC分类号: H04H60/70 H04H20/59

    摘要: A communication terminal includes a receiver for receiving a communication signal including urgent warning information, a current location information retrieving unit that retrieves location information regarding a current location of a user, a storage unit that stores information regarding a registered point specified by the user or a communication system, a processing unit that calculates a distance between the current location and the registered point, in response to receiving by the receiving unit of the communication signal, and an information providing unit that provides to-be-provided information including, at least, the distance to the user.

    摘要翻译: 通信终端包括用于接收包括紧急警告信息的通信信号的接收器,检索关于用户的当前位置的位置信息的当前位置信息检索单元,存储关于用户指定的注册点的信息的存储单元或 通信系统,响应于所述接收单元接收到所述通信信号而计算当前位置和所述注册点之间的距离的处理单元,以及提供所提供的信息的信息提供单元,所述信息提供单元至少包括: 到用户的距离。

    Electrophoretic display device
    88.
    发明授权
    Electrophoretic display device 有权
    电泳显示装置

    公开(公告)号:US08427737B2

    公开(公告)日:2013-04-23

    申请号:US13187333

    申请日:2011-07-20

    IPC分类号: G02B26/00 G09G3/34

    CPC分类号: G02F1/167

    摘要: An electrophoretic display device includes: a first substrate and a second substrate which are arranged opposite to each other at a predetermined interval; a plurality of pixel electrodes which are aligned on the first substrate; a wiring which is arranged between adjacent pixel electrodes among the pixel electrodes; an opposite electrode which is provided on the second substrate; a partition wall which is provided above the wiring of the first substrate to stand toward the second substrate so as to surround the pixel electrodes; and a solvent which fills up a space surrounded by the partition wall and in which a plurality of particles are dispersed. The partition wall has a rectangular shape including four sides, at least one of which partially has an expanded-width portion wider than other portion of the at least one of the four sides.

    摘要翻译: 电泳显示装置包括:以预定间隔彼此相对布置的第一基板和第二基板; 在第一基板上排列的多个像素电极; 布置在像素电极之间的相邻像素电极之间的布线; 设置在所述第二基板上的相对电极; 分隔壁,设置在第一基板的布线的上方以朝向第二基板以围绕像素电极; 以及填充由分隔壁包围的空间并且分散有多个颗粒的溶剂。 分隔壁具有包括四个侧面的矩形形状,其中至少一个部分地具有比四个侧面中的至少一个的其它部分更宽的扩宽部分。

    NETWORK SELECTION SUPPORTING METHOD AND NETWORK SELECTION SUPPORTING APPARATUS
    89.
    发明申请
    NETWORK SELECTION SUPPORTING METHOD AND NETWORK SELECTION SUPPORTING APPARATUS 有权
    网络选择支持方法和网络选择支持设备

    公开(公告)号:US20130070643A1

    公开(公告)日:2013-03-21

    申请号:US13700648

    申请日:2012-01-12

    IPC分类号: H04L12/24

    摘要: To support selection of a communication system of a network applied to an FA system of a user, a network selection supporting method according to an embodiment of the present invention includes a condition displaying step of displaying, on a condition input screen, one or a plurality of selection conditions set in advance related to the communication system of the network applied to the FA system, a condition receiving step of receiving an input of a selection condition desired by the user among the selection conditions displayed on the condition input screen, a communication system searching step of searching through a communication system database and finding a communication system matching the input selection condition, and a communication system list displaying step of displaying a search result of the communication system on the communication system list display screen as a list.

    摘要翻译: 为了支持对应用于用户的FA系统的网络的通信系统的选择,根据本发明实施例的网络选择支持方法包括条件显示步骤,在条件输入画面上显示一个或多个 预先设置的与应用于FA系统的网络的通信系统有关的选择条件;条件接收步骤,在条件输入画面上显示的选择条件中接收用户期望的选择条件的输入,通信系统 搜索通过通信系统数据库搜索并找到与输入选择条件相匹配的通信系统的搜索步骤,以及在通信系统列表显示屏幕上显示通信系统的搜索结果的通信系统列表显示步骤作为列表。

    METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL
    90.
    发明申请
    METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL 审中-公开
    制造碳化硅晶体的方法

    公开(公告)号:US20130068157A1

    公开(公告)日:2013-03-21

    申请号:US13606529

    申请日:2012-09-07

    IPC分类号: C30B23/00 C23C14/06

    摘要: A method of manufacturing silicon carbide crystal includes the steps of forming silicon carbide crystal on a main surface of a base composed of carbon and removing the base from silicon carbide crystal by oxidizing carbon. According to the manufacturing method, by gasifying the base integrated with the silicon carbide crystal by oxidizing carbon forming the base, the base is removed from the silicon carbide crystal. Therefore, since it is not necessary to apply physical force to the silicon carbide crystal or the base for separating them from each other, occurrence of a defect involved with removal of the base can be suppressed. Therefore, high-quality silicon carbide crystal having fewer defects can be manufactured.

    摘要翻译: 制造碳化硅晶体的方法包括以下步骤:在由碳组成的基底的主表面上形成碳化硅晶体,并通过氧化碳从碳化硅晶体上除去碱。 根据该制造方法,通过使形成基体的碳进行氧化,使与碳化硅晶体一体化的基体气化,从碳化硅晶体除去基体。 因此,由于不需要对碳化硅晶体或将它们分离的基体施加物理力,因此可以抑制与基体的去除有关的缺陷的发生。 因此,可以制造具有较少缺陷的高质量碳化硅晶体。