公开(公告)号：US5313559A

公开(公告)日：1994-05-17

申请号：US833127

申请日：1992-02-10

Applicant: Hisao Ogata ,  Hiroshi Sakou ,  Masahiro Abe ,  Junichi Higashino

Inventor： Hisao Ogata ,  Hiroshi Sakou ,  Masahiro Abe ,  Junichi Higashino

IPC: G06F15/18 ,  G06G7/60 ,  G06N3/08 ,  G06N99/00

CPC classification number: G06N3/08

Abstract: A learning control method reduces overall learning time by displaying data related to an appropriate determination of learning protraction and a proper restoring method. Prior to initiating the learning, the user is inquired about the current problem and a problem data set representing items associated with the problem is obtained. Evaluation data indicating a state of learning obtained during the learning on the current problem is sequentially stored and displayed. When there is a high possibility of learning protraction during the learning, a message informing the user is displayed. When the learning is stopped by the user in this case, the problem data set and evaluation data set are stored. Then, a list of restoring methods is displayed and a particular restoring method is selected by the user once the learning is stopped. The learning is restarted on the current problem in accordance with the selected restoring method.

Abstract translation: 学习控制方法通过显示与学习推进的适当确定有关的数据和适当的恢复方法来减少整体学习时间。 在开始学习之前，询问用户当前的问题，并获得表示与该问题相关的项目的问题数据集。 顺序地存储并显示表示在当前问题的学习期间获得的学习状态的评估数据。 当在学习期间学习延迟的可能性很高时，显示通知用户的消息。 当在这种情况下用户停止学习时，存储问题数据集和评估数据集。 然后，显示恢复方法的列表，并且一旦学习停止，用户选择特定的恢复方法。 根据所选择的恢复方法对当前问题重新开始学习。

公开(公告)号：US5304521A

公开(公告)日：1994-04-19

申请号：US102059

申请日：1993-08-04

Applicant: Masahiro Abe ,  Tsutomu Nanataki ,  Shinsuke Yano

Inventor： Masahiro Abe ,  Tsutomu Nanataki ,  Shinsuke Yano

IPC: C03C14/00 ,  C04B35/462 ,  C04B35/465 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  H01P7/10 ,  H05K1/03 ,  C04B35/46

CPC classification number: H01G4/1272 ,  C03C14/004 ,  C04B35/462 ,  C04B35/465 ,  C04B35/4682 ,  H01B3/12 ,  H01P7/10 ,  H05K1/0306

Abstract: A dielectric ceramic composition is disclosed which consists essentially of: a main ceramic composition containing barium oxide, titanium oxide, rare earth oxide and bismuth oxide as major components, which composition is represented by xBaO.yTiO.sub.2.z[(1-a)RE.sub.2 O.sub.3.aBi.sub.2 O.sub.3 ] where RE represents at least one rare earth metal, 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.25, x+y+z=1 and 0

Abstract translation: 公开了一种电介质陶瓷组合物，其基本上由以下组成：主要陶瓷组合物，其含有氧化钡，氧化钛，稀土氧化物和氧化铋作为主要成分，该组成由xBaO.yTiO2.z（（1-a）RE 2 O 3）表示。 aBi2O3）其中RE表示至少一种稀土金属，0.10 <= x <= 0.20,0.60 <= y <= 0.75,0.10 <= z <= 0.25，x + y + z = 1和0

公开(公告)号：US5290740A

公开(公告)日：1994-03-01

申请号：US971179

申请日：1992-11-03

Applicant: Masahiro Abe ,  Tatsumi Sugiura ,  Tsutomu Nanataki ,  Shinsuke Yano

Inventor： Masahiro Abe ,  Tatsumi Sugiura ,  Tsutomu Nanataki ,  Shinsuke Yano

IPC: C04B35/465 ,  C04B35/49 ,  C04B35/46

CPC classification number: C04B35/49 ,  C04B35/465 ,  Y10T29/49002

Abstract: A dielectric ceramic composition is disclosed which includes: a main ceramic composition of barium oxide and titanium oxide, or barium oxide, titanium oxide and at least one of strontium oxide, calcium oxide, zirconia and zinc oxide, which composition is represented by (1-a-b)BaO.aSrO.bCaO.x[(1-c)TiO.sub.2.cZrO.sub.2 ].yZnO, where 3.1.ltoreq.x.ltoreq.5.4, 0.ltoreq.y.ltoreq.2.9, 0.ltoreq.a+b.ltoreq.0.4, 0.ltoreq.c.ltoreq.0.2; and a secondary component at least a part of which consists of a B.sub.2 O.sub.3 material or a glass material containing as one of glass components, the secondary component being added to the main ceramic composition, in an amount of 0.1-7.5 parts by weight of B.sub.2 O.sub.3 per 100 parts by weight of the main ceramic composition. Also disclosed are a method of preparing such a dielectric ceramic composition, a dielectric resonator for microwave application which uses the dielectric ceramic composition, or a dielectric filter having a plurality of such dielectric resonators, and a method of producing the dielectric resonator or dielectric filter.

Abstract translation: 公开了一种电介质陶瓷组合物，其包括：氧化钡和氧化钛的主要陶瓷组合物，或氧化钡，氧化钛和氧化锶，氧化钙，氧化锆和氧化锌中的至少一种，该组成由（1- ab）BaO.a0.bCaO.x（（1-c）TiO2.cZrO2）.yZnO，其中3.1 <= x <= 5.4,0 <= y <= 2.9,0 <= a + b <= 0.4,0 <= c <= 0.2; 以及次要成分，其中至少一部分由B 2 O 3材料或玻璃成分构成，玻璃成分含有0.1-7.5重量份的B 2 O 3 / 100重量份的主要陶瓷组合物。 还公开了制备这种介电陶瓷组合物的方法，使用该介电陶瓷组合物的微波应用的介质谐振器或具有多个此类介质谐振器的介质滤波器，以及制造介质谐振器或介质滤波器的方法。

公开(公告)号：US5261998A

公开(公告)日：1993-11-16

申请号：US950140

申请日：1992-09-24

Applicant: Shigehiko Kanetake ,  Toshihiko Katsura ,  Masahiro Abe

Inventor： Shigehiko Kanetake ,  Toshihiko Katsura ,  Masahiro Abe

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01J37/32935 ,  H01J37/32972 ,  H01L21/32136

Abstract: For dry-etching a material such as an aluminum alloy layer, a helium gas is added to an etching gas to detect an end point of etching in the material. When the dry-etching of the material has been completed, an emission spectrum intensity of helium having a single peak occurs.

Abstract translation: 为了对诸如铝合金层的材料进行干蚀刻，将氦气加入到蚀刻气体中以检测材料中的蚀刻终点。 当材料的干蚀刻完成时，发生具有单峰的氦的发射光谱强度。

公开(公告)号：US5253333A

公开(公告)日：1993-10-12

申请号：US469241

申请日：1990-01-24

Applicant: Masahiro Abe

Inventor： Masahiro Abe

IPC: G06F15/18 ,  G05B13/02 ,  G06F9/44 ,  G06N3/00 ,  G06N5/02 ,  G06N5/04 ,  G06N99/00 ,  G06F15/46

CPC classification number: G06N5/025 ,  G05B13/0265

Abstract: Method and system of predicting attribute value in the learning system, (a) where expected value of equivalent example and its classification class is generated by domain knowledge, with respect to the test example being supplemented with candidates of a plural number of attribute values, in which the attribute lacking part of attribute values can adopt in the learning system, having (i) attribute descriptions containing a plural number of training examples, each of which contains attribute and its attribute value, and such training example and classification class adopted by each training example, and (ii) domain knowledge generating a pair of second example and its classification class from a pair of first example and its classification class, as equivalent example, (b) where classification class of equivalent example generated as above is predicted by decision tree produced based on the above attribute descriptions, and (c) where the attribute value lacking the above test example is predicted by use of the expected value of classification class and the above prediction result with respect to the above equivalent example.

Abstract translation: 在学习系统中预测属性值的方法和系统，（a）其中通过领域知识产生等效示例及其分类类的期望值，关于测试示例补充有多个属性值的候选， 属性值属于缺乏属性值的属性的属性可以在学习系统中采用，具有（i）包含多个训练样本的属性描述，每个训练示例包含属性及其属性值，以及每个训练采用的训练示例和分类等级 例如，（ii）从一对第一示例和其分类类生成一对第二示例和其分类类的域知识作为等效示例，（b）如果由上述生成的等效示例的分类类由决策树预测 基于上述属性描述生成，（c）缺少上述测试示例的属性值 通过使用分类等级的预期值和上述等效示例的上述预测结果来预测。

公开(公告)号：US5185304A

公开(公告)日：1993-02-09

申请号：US745180

申请日：1991-08-15

Applicant: Takami Hirai ,  Shinsuke Yano ,  Masahiro Abe

Inventor： Takami Hirai ,  Shinsuke Yano ,  Masahiro Abe

IPC: C04B35/468 ,  H01B3/12

CPC classification number: C04B35/4686 ,  H01B3/12

Abstract: A dielectric ceramic composition is disclosed which consists principally of barium oxide, titanium oxide, neodymium oxide, samarium oxide and bismuth oxide, which are represented by the following formula xBaO--yTiO.sub.2 --z[(1-a-b)Nd.sub.2 O.sub.3 --aSm.sub.2 O.sub.3 --bBi.sub.2 O.sub.3 ], where 0.10.ltoreq.x.ltoreq.0.20, 0.60.ltoreq.y.ltoreq.0.75, 0.10.ltoreq.z.ltoreq.0.24, x+y+z=1, 0

公开(公告)号：US5103287A

公开(公告)日：1992-04-07

申请号：US605357

申请日：1990-10-30

Applicant: Yasukazu Mase ,  Masahiro Abe ,  Toshihiko Katsura

Inventor： Yasukazu Mase ,  Masahiro Abe ,  Toshihiko Katsura

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L23/522 ,  H01L27/06

CPC classification number: H01L21/768 ,  H01L23/5226 ,  H01L2924/0002

Abstract: An insulation film is formed on a semiconductor substrate in which semiconductor elements are formed. A plurality of wiring layers and interlaid insulation films are alternately laminated on the insulation film. The design margins of the laminated wiring layers and via holes formed in the interlaid insulation films are set to be larger as they are set at a higher level. The design margin is determined by using the focus margin, mask misalignment due to the mask alignment accuracy, pattern size conversion error, warp of the semiconductor substrate and irregularity of the surface of the semiconductor substrate as parameters.

公开(公告)号：US5100476A

公开(公告)日：1992-03-31

申请号：US499643

申请日：1990-03-27

Applicant: Yasukazu Mase ,  Osamu Hirata ,  Masahiro Abe

Inventor： Yasukazu Mase ,  Osamu Hirata ,  Masahiro Abe

IPC: B08B3/12 ,  H01L21/00 ,  H01L21/304

CPC classification number: H01L21/67051

Abstract: An apparatus for cleaning semiconductor devices has a mixing section for mixing a chemical solution with pure water. A semiconductor substrate to be cleaned is placed on a support. An ultrasonic generator applies ultrasonic vibrations to the supplied pure water. The mixing section mixes a predetermined chemical solution with the pure water applied with the ultrasonic vibrations and supplies a desired pure water solution onto the semiconductor substrate.

公开(公告)号：US5089061A

公开(公告)日：1992-02-18

申请号：US247954

申请日：1988-09-22

Applicant: Masahiro Abe ,  Kazuhisa Okada ,  Shuzo Fukuda ,  Yasushi Tanaka ,  Masayuki Yamato ,  Yoshikazu Takada

Inventor： Masahiro Abe ,  Kazuhisa Okada ,  Shuzo Fukuda ,  Yasushi Tanaka ,  Masayuki Yamato ,  Yoshikazu Takada

IPC: C21D8/12 ,  C23C10/08 ,  C23C16/24 ,  C23C16/54 ,  C23C16/56 ,  H01F1/147

CPC classification number: C23C16/56 ,  C21D8/1255 ,  C23C16/24 ,  H01F1/14775 ,  H01F1/14783

Abstract: The present invention relates to a method for producing high silicon steel strip in a continuous treatment line through chemical vapor deposition (called "CVD" hereinafter), wherein the steel strip is subjected continuously to siliconization at temperatures between 1023.degree. and 1200.degree. C. by CVD in a non-oxidizing gas atmosphere containing SiCl.sub.4 between 5% and 35% in molar fraction. Subsequently a diffusion treatment is performed in a non-oxidizing gas atmosphere not containing SICl.sub.4 for diffusing Si uniformly throughout the steel strip, which is then cooled and coiled. If required, the steel strip may be coated with an insolating film and subjected to a baking treatment, before cooling and coiling.

Abstract translation: 本发明涉及通过化学气相沉积（称为“CVD”）在连续处理线中生产高硅钢带的方法，其中钢带在1023℃和1200℃之间的温度下连续进行硅化，由 在含有SiCl 4的摩尔分数为5％至35％的非氧化性气体气氛中进行CVD。 随后，在不含SIC14的非氧化性气体气氛中进行扩散处理，以均匀地将Si均匀地扩散到钢带上，然后将其冷却并盘绕。 如果需要，可以在冷却和卷取之前，用剥离膜涂覆钢带并进行烘烤处理。

公开(公告)号：US5000679A

公开(公告)日：1991-03-19

申请号：US315991

申请日：1989-02-27

Applicant: Shuzo Fukuda ,  Masahiro Abe ,  Shiro Fukunaka ,  Michio Nakayama ,  Koichiro Arima ,  Shunichi Sugiyama ,  Koji Matsui

Inventor： Shuzo Fukuda ,  Masahiro Abe ,  Shiro Fukunaka ,  Michio Nakayama ,  Koichiro Arima ,  Shunichi Sugiyama ,  Koji Matsui

IPC: F23D14/24

CPC classification number: F23D14/24 ,  F23C2900/07002

Abstract: A burner for directly flaming steel making materials to accomplish reduction without oxidation, wherein the burner comprises a plurality of combusion air outlets spaced circumferentially of the inner wall of a tubular burner tile, and fuel gas outlets disposed centrally of the burner tile, and wherein the combustion air outlets and fuel gas outlets are formed and disposed with specified jetting angles and distances to produce burning without oxidation.