公开(公告)号：US08077210B2

公开(公告)日：2011-12-13

申请号：US12267940

申请日：2008-11-10

申请人： Masahiro Shibata

发明人： Masahiro Shibata

IPC分类号： H04N5/228 ,  G03B17/00

摘要： An image capturing apparatus includes a motion vector detection unit which detects a motion vector on the basis of the correlation between image signals continuously captured by an image capturing unit, a reliability evaluation value calculation unit which calculates the reliability evaluation value of the motion vector detected by the motion vector detection unit, a blurring correction amount determination unit which determines the image blurring correction amount on the basis of the motion vector detected by the motion vector detection unit, a correction amount reduction unit which reduces the image blurring correction amount on the basis of the reliability evaluation value calculated by the reliability evaluation value calculation unit, and a blurring correction unit which corrects image blurring on the basis of the image blurring correction amount reduced by the correction amount reduction unit.

公开(公告)号：US07767020B2

公开(公告)日：2010-08-03

申请号：US10589587

申请日：2005-02-18

申请人： Hiroshi Inagaki ,  Masanori Honma ,  Shigeki Kawashima ,  Masahiro Shibata

发明人： Hiroshi Inagaki ,  Masanori Honma ,  Shigeki Kawashima ,  Masahiro Shibata

IPC分类号： C30B15/20

CPC分类号： C30B15/20 ,  C30B15/305 ,  C30B29/06 ,  Y10T117/1056 ,  Y10T117/1068

摘要： A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (6), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor (6) is reduced. Especially, a width of speed fluctuation (ΔV) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor (6) becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt (5).

摘要翻译： 一种用于制造单晶半导体的方法，其中在将单晶半导体从用于生长的熔体中提取单个晶体的过程中，杂质更均匀地结合到单晶半导体中，使得跨越半导体晶片的杂质浓度的变化 可以减少表面，从而可以提高晶片的平面性。 在提升单晶半导体（6）的过程中，控制上拉速度的波动，从而降低单晶半导体（6）中杂质浓度的变化。 特别地，将10秒内的速度波动（＆Dgr; V）的宽度调整为小于0.025mm / min。 此外，在进行用于调节上升速度使得单晶半导体（6）的直径成为期望直径的控制时，对熔体（5）施加强度为1500高斯或更高的磁场。

公开(公告)号：US20100130671A1

公开(公告)日：2010-05-27

申请号：US12531346

申请日：2008-03-14

申请人： Toshihiro Tadaki ,  Masahiro Shibata ,  Tamotsu Nagaoka ,  Takuo Sone

发明人： Toshihiro Tadaki ,  Masahiro Shibata ,  Tamotsu Nagaoka ,  Takuo Sone

IPC分类号： C08L43/04 ,  C08F230/08 ,  C08F4/48

CPC分类号： C08L15/00 ,  B60C1/0016 ,  C08C19/44 ,  C08F36/04 ,  C08F297/04 ,  C08F297/044 ,  C08L7/00 ,  C08L19/006 ,  C08L53/02 ,  C08F4/08 ,  C08L2666/02

摘要： A conjugated diolefin copolymer rubber is produced by copolymerization of a conjugated diolefin and an aromatic vinyl compound and has a primary amino group and an alkoxysilyl group bonded to the copolymer chain. The conjugated diolefin copolymer rubber contains the aromatic vinyl compound in an amount of 5 to 60 wt %. The aromatic vinyl compound is densely distributed in one terminal of the copolymer chain, and is scarcely distributed in the other terminal. The conjugated diolefin copolymer rubber has a temperature difference (ΔTg) of 25° C. or more. The conjugated diolefin copolymer rubber has low hysteresis loss properties as well as improved abrasion resistance, rupture characteristics, and road grip characteristics without impairing wet skid characteristics. A method for producing the conjugated diolefin copolymer rubber is also disclosed.

摘要翻译： 共轭二烯烃共聚物橡胶通过共轭二烯烃和芳香族乙烯基化合物共聚而制备，并具有与共聚物链键合的伯氨基和烷氧基甲硅烷基。 共轭二烯共聚物橡胶含有5〜60重量％的芳族乙烯基化合物。 芳族乙烯基化合物密集地分布在共聚物链的一个末端，并且几乎不分布在另一个末端。 共轭二烯共聚物橡胶的温差（＆Dgr; Tg）为25℃以上。 共轭二烯共聚物橡胶具有低滞后损失性能以及改进的耐磨性，断裂特性和道路抓地力特性，而不损害湿滑特性。 还公开了共轭二烯共聚物橡胶的制造方法。

公开(公告)号：US07644905B2

公开(公告)日：2010-01-12

申请号：US11472317

申请日：2006-06-22

申请人： Kazuya Ogata ,  Hidenori Fukumoto ,  Atsuya Takahashi ,  Masahiro Shibata

发明人： Kazuya Ogata ,  Hidenori Fukumoto ,  Atsuya Takahashi ,  Masahiro Shibata

IPC分类号： H02G1/02 ,  B65H59/00

CPC分类号： G02B6/483 ,  H02G1/02 ,  H02G7/06

摘要： A method and apparatus including an easily installed spiral support useful laying a cable. The spiral support is composed of a counterclockwise spiral portion and a clockwise spiral portion, both of which are connected to each other with a reverse portion therebetween. The spiral support is installed on a messenger wire in such a way that the reverse portion is fitted on the messenger wire; the spiral support is rotated counterclockwise or clockwise; and these steps are repeated.

摘要翻译： 一种包括易于安装的螺旋支撑件的方法和装置，其可用于铺设电缆。 螺旋支撑件由逆时针螺旋部分和顺时针螺旋部分组成，它们都彼此连接，并且在它们之间具有相反的部分。 螺旋支撑件安装在信使线上，使得反向部分安装在信使线上; 螺旋支撑逆时针或顺时针旋转; 并重复这些步骤。

公开(公告)号：US20090301385A1

公开(公告)日：2009-12-10

申请号：US11919071

申请日：2006-03-20

申请人： Hidetoshi Kuroki ,  Motoaki Yoshinaga ,  Yutaka Shiraishi ,  Masahiro Shibata

发明人： Hidetoshi Kuroki ,  Motoaki Yoshinaga ,  Yutaka Shiraishi ,  Masahiro Shibata

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (10A) to the top of the straight cylinder portion (10B), the silicon single crystal (10) is pulled under conditions that the oxygen concentration Oi from the shoulder (10A) to the top of the straight cylinder portion (10B) of the silicon single crystal (10) is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×1017 atoms/cm3.

摘要翻译： 一种硅晶片的制造方法，其中，当通过拉拔法生长硅单晶时，从硅单晶的直筒部的肩部到顶部的一部分防止从间隙型点缺陷开始发生滑动 在成长条件下进入富裕地区。 为了防止在从台肩（10A）到直筒部（10B）的顶部的范围内的滑动的发生，在来自肩部（10A）的氧浓度Oi的条件下拉动硅单晶（10） 到硅单晶（10）的直筒部（10B）的顶部的面积不低于预定的浓度，以防止从间隙型点缺陷开始滑动，更具体地说是不低于9.0×10 17原子/ cm 3。

公开(公告)号：US20090153680A1

公开(公告)日：2009-06-18

申请号：US12267940

申请日：2008-11-10

申请人： Masahiro Shibata

发明人： Masahiro Shibata

IPC分类号： H04N5/228 ,  H04N5/262

CPC分类号： H04N5/23248 ,  H04N5/144 ,  H04N5/23277

摘要： An image capturing apparatus includes a motion vector detection unit which detects a motion vector on the basis of the correlation between image signals continuously captured by an image capturing unit, a reliability evaluation value calculation unit which calculates the reliability evaluation value of the motion vector detected by the motion vector detection unit, a blurring correction amount determination unit which determines the image blurring correction amount on the basis of the motion vector detected by the motion vector detection unit, a correction amount reduction unit which reduces the image blurring correction amount on the basis of the reliability evaluation value calculated by the reliability evaluation value calculation unit, and a blurring correction unit which corrects image blurring on the basis of the image blurring correction amount reduced by the correction amount reduction unit.

摘要翻译： 一种摄像装置，包括：运动矢量检测单元，其基于由图像拍摄单元连续拍摄的图像信号之间的相关性来检测运动矢量;可靠性评估值计算单元，其计算由检测到的运动矢量的可靠性评估值， 运动矢量检测单元，模糊校正量确定单元，其基于由运动矢量检测单元检测的运动矢量来确定图像模糊校正量;校正量减少单元，其基于以下步骤减小图像模糊校正量 由可靠性评估值计算单元计算的可靠性评估值，以及基于由修正量减少单元减少的图像模糊校正量来校正图像模糊的模糊校正单元。

公开(公告)号：US07396406B2

公开(公告)日：2008-07-08

申请号：US10588533

申请日：2004-02-09

申请人： Hiroshi Inagaki ,  Masahiro Shibata ,  Shigeki Kawashima ,  Nobuyuki Fukuda

发明人： Hiroshi Inagaki ,  Masahiro Shibata ,  Shigeki Kawashima ,  Nobuyuki Fukuda

IPC分类号： C30B15/20

CPC分类号： C30B15/14 ,  C30B15/22 ,  C30B15/305 ,  C30B29/06 ,  C30B30/04 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference ΔTc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal (14) and the size (diameter D) of the seed crystal (14). When the seed crystal (14) comes into contact with the melt (5), electric power supplied to a bottom heater (19) is fixed, and a magnetic field produced by a magnet (20) is applied to the melt (5). Electric power supplied to a main heater (9) is controlled so that the temperature at the surface of the melt (5) which the seed crystal (14) comes into contact with may be a target value. After the seed crystal (14) comes into contact with the melt (5), single crystal silicon is pulled up without performing a necking process.

摘要翻译： 一种单晶半导体制造方法，用于在晶种与熔体接触的同时，在不改变或几乎不变化供给加热器的电力的情况下实现无位错单晶。 根据添加到晶种（14）中的杂质浓度（C）和晶种（14）的尺寸（直径D）来确定晶种中不产生位错的允许温差DeltaTc。 当籽晶（14）与熔体（5）接触时，提供给底部加热器（19）的电力被固定，并且由磁体（20）产生的磁场被施加到熔体（5）。 控制提供给主加热器（9）的电力使得晶种（14）接触的熔体（5）的表面处的温度可以是目标值。 在籽晶（14）与熔体（5）接触之后，单晶硅被拉起而不进行缩颈处理。

公开(公告)号：US20080145005A1

公开(公告)日：2008-06-19

申请号：US12000653

申请日：2007-12-14

申请人： Masahiro Shibata ,  Masakazu Shigehara

发明人： Masahiro Shibata ,  Masakazu Shigehara

IPC分类号： G02B6/36

CPC分类号： G02B6/4292 ,  G02B6/4246 ,  G02B6/4277

摘要： The present invention provides an optical communication module and an optical subassembly which can suppress leakage of electromagnetic waves. An optical communication module includes: a receptacle section for insertion of an optical connector plug; a casing section which is connected to the receptacle section and houses a circuit board; and an optical transmission subassembly and an optical receive subassembly, which are optically coupled with the optical connector plug and are electrically connected to the circuit board. At least a part of the receptacle section, at least a part of the casing section, at least a part of the optical transmission subassembly, or at least a part of the optical receive subassembly is formed of a resin containing an additive which has electromagnetic wave absorption properties.

摘要翻译： 本发明提供一种可以抑制电磁波泄漏的光通信模块和光子组件。 光通信模块包括：用于插入光连接器插头的插座部分; 壳体部分，其连接到容纳部分并容纳电路板; 以及光传输子组件和光接收子组件，其与光连接器插头光学耦合并且电连接到电路板。 容器部分的至少一部分，壳体部分的至少一部分，光学传输子组件的至少一部分，或至少一部分光学接收子组件由包含具有电磁波的添加剂的树脂形成 吸收性能。

公开(公告)号：US20070265397A1

公开(公告)日：2007-11-15

申请号：US11573308

申请日：2005-07-21

申请人： Masahiro Shibata ,  Naokazu Kobayashi ,  Toshihiro Tadaki

发明人： Masahiro Shibata ,  Naokazu Kobayashi ,  Toshihiro Tadaki

IPC分类号： C08F2/00

CPC分类号： C08L15/00 ,  C08C19/44 ,  C08F236/10 ,  C08F4/48

摘要： A process for producing a conjugated diene copolymer rubber which comprises initiating a copolymerization reaction in a reaction system containing a first conjugated diene compound and a first aromatic vinyl compound and completing the reaction, adding a first polyfunctional monomer to the reaction system, optionally further adding a second conjugated diene compound and a second aromatic vinyl compound, and further conducting copolymerization reaction, and adding a modifier to the reaction system to react the modifier with the copolymer. A rubber composition having excellent processability, exhibiting sufficient hardness even after vulcanization, and possessing reduced rolling resistance can be obtained.

摘要翻译： 一种共轭二烯共聚物橡胶的制造方法，其包括在含有第一共轭二烯化合物和第一芳族乙烯基化合物的反应体系中引发共聚反应，并完成反应，向反应体系中加入第一多官能单体，任选地， 第二共轭二烯化合物和第二芳族乙烯基化合物，进一步进行共聚反应，并在该反应体系中加入改性剂以使改性剂与共聚物反应。 可以获得具有优异的加工性，即使在硫化后显示出足够的硬度并且具有降低的滚动阻力的橡胶组合物。

公开(公告)号：US20070193500A1

公开(公告)日：2007-08-23

申请号：US10589587

申请日：2005-02-18

申请人： Hiroshi Inagaki ,  Masanori Honma ,  Shigeki Kawashima ,  Masahiro Shibata

发明人： Hiroshi Inagaki ,  Masanori Honma ,  Shigeki Kawashima ,  Masahiro Shibata

IPC分类号： C30B11/00

CPC分类号： C30B15/20 ,  C30B15/305 ,  C30B29/06 ,  Y10T117/1056 ,  Y10T117/1068

摘要： A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (6), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor (6) is reduced. Especially, a width of speed fluctuation (ΔV) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor (6) becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt (5).

摘要翻译： 一种用于制造单晶半导体的方法，其中在将单晶半导体从用于生长的熔体中提取单个晶体的过程中，杂质更均匀地结合到单晶半导体中，使得跨越半导体晶片的杂质浓度的变化 可以减少表面，从而可以提高晶片的平面性。 在提升单晶半导体（6）的过程中，控制上拉速度的波动，从而减小单晶半导体（6）中杂质浓度的变化。 特别地，10秒内的速度波动（DeltaV）的宽度被调整为小于0.025mm / min。 此外，在进行用于调节上升速度使得单晶半导体（6）的直径成为期望直径的控制时，对熔体（5）施加强度为1500高斯或更高的磁场。