公开(公告)号：US08864906B2

公开(公告)日：2014-10-21

申请号：US11919071

申请日：2006-03-20

申请人： Hidetoshi Kuroki ,  Motoaki Yoshinaga ,  Yutaka Shiraishi ,  Masahiro Shibata

发明人： Hidetoshi Kuroki ,  Motoaki Yoshinaga ,  Yutaka Shiraishi ,  Masahiro Shibata

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04 ,  C30B29/06 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (10A) to the top of the straight cylinder portion (10B), the silicon single crystal (10) is pulled under conditions that the oxygen concentration Oi from the shoulder (10A) to the top of the straight cylinder portion (10B) of the silicon single crystal (10) is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×1017 atoms/cm3.

摘要翻译： 一种硅晶片的制造方法，其中，当通过拉拔法生长硅单晶时，从硅单晶的直筒部的肩部到顶部的一部分防止从间隙型点缺陷开始发生滑动 在成长条件下进入富裕地区。 为了防止在从台肩（10A）到直筒部（10B）的顶部的范围内的滑动的发生，在来自肩部（10A）的氧浓度Oi的条件下拉动硅单晶（10） 到单晶硅（10）的直筒部（10B）的顶部的面积不低于预定的浓度，防止从间隙型点缺陷开始滑动，更具体地说是不低于9.0×1017原子/ cm3。

公开(公告)号：US20090301385A1

公开(公告)日：2009-12-10

申请号：US11919071

申请日：2006-03-20

申请人： Hidetoshi Kuroki ,  Motoaki Yoshinaga ,  Yutaka Shiraishi ,  Masahiro Shibata

发明人： Hidetoshi Kuroki ,  Motoaki Yoshinaga ,  Yutaka Shiraishi ,  Masahiro Shibata

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/206

摘要： A method for producing a silicon wafer in which occurrence of slip starting from interstitial-type point defects is prevented in a part from the shoulder to the top of the straight cylinder portion of a silicon single crystal when the silicon single crystal is grown by pulling method under growth conditions entering an I-rich region. In order to prevent occurrence of slip in the range from the shoulder (10A) to the top of the straight cylinder portion (10B), the silicon single crystal (10) is pulled under conditions that the oxygen concentration Oi from the shoulder (10A) to the top of the straight cylinder portion (10B) of the silicon single crystal (10) is not lower than a predetermined concentration for preventing slip starting from interstitial-type point defects, more specifically not lower than 9.0×1017 atoms/cm3.

摘要翻译： 一种硅晶片的制造方法，其中，当通过拉拔法生长硅单晶时，从硅单晶的直筒部的肩部到顶部的一部分防止从间隙型点缺陷开始发生滑动 在成长条件下进入富裕地区。 为了防止在从台肩（10A）到直筒部（10B）的顶部的范围内的滑动的发生，在来自肩部（10A）的氧浓度Oi的条件下拉动硅单晶（10） 到硅单晶（10）的直筒部（10B）的顶部的面积不低于预定的浓度，以防止从间隙型点缺陷开始滑动，更具体地说是不低于9.0×10 17原子/ cm 3。

公开(公告)号：US20070068448A1

公开(公告)日：2007-03-29

申请号：US11605752

申请日：2006-11-29

申请人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

公开(公告)号：US06361597B1

公开(公告)日：2002-03-26

申请号：US09403621

申请日：1999-11-05

申请人： Nobumitsu Takase ,  Tomohisa Machida ,  Yutaka Shiraishi

发明人： Nobumitsu Takase ,  Tomohisa Machida ,  Yutaka Shiraishi

IPC分类号： C30B1500

CPC分类号： C30B15/02 ,  C30B15/14 ,  Y10T117/1056

摘要： The present invention aims to improve thermal efficiency and to reduce melting time when a raw material in an auxiliary crucible is heated and melted by induction heating method. When an initial raw material 30a is at low temperature and its conductivity is relatively low, a conductive carbon cylinder 2 is arranged at such a height as to cover the entire side wall of the auxiliary crucible 1, and when high frequency current is applied on a high frequency coil 3, secondary induction current is generated on the carbon cylinder 2. Then, Joule heat is generated on the carbon cylinder 2 by the secondary induction current, and heat of the carbon cylinder 2 is transmitted to the raw material inside via the auxiliary crucible 1. Thus, the raw material is heated, and melting is started. When the raw material is melted, an insulating ceramic base 4 is arranged at such a position as to cover the entire side wall of the auxiliary crucible 1. Because conductivity of the raw material is gradually increased, secondary induction current is generated in the melt 30b, and Joule heat is generated in the melt 30b itself by the secondary induction current.

摘要翻译： 本发明旨在通过感应加热方法将辅助坩埚中的原料加热熔化时，提高热效率和减少熔化时间。 当初始原料30a处于低温并且其导电性相对较低时，导电碳筒2布置成覆盖辅助坩埚1的整个侧壁的高度，并且当高频电流施加在 高频线圈3，在碳筒2上产生二次感应电流。然后，通过二次感应电流在碳筒2上产生焦耳热，碳筒2的热量经由辅助电极向内部传递给原料 坩埚1.因此，原料被加热，开始熔化。 当原料熔化时，绝缘陶瓷基体4布置在覆盖辅助坩埚1的整个侧壁的位置。由于原料的导电性逐渐增加，因此在熔融物30b中产生二次感应电流 ，并且熔融物30b本身通过二次感应电流产生焦耳热。

公开(公告)号：US5681758A

公开(公告)日：1997-10-28

申请号：US743046

申请日：1996-11-04

申请人： Yutaka Shiraishi

发明人： Yutaka Shiraishi

IPC分类号： C30B15/02 ,  C30B29/06 ,  H01L21/00

CPC分类号： C30B15/02

摘要： A method of supplying raw material for fabricating semiconductor single crystal according to the continuously charged method provides an inventive method to overcome the problems of the raw material being charged either insufficiently or excessively, and to charge the raw material steadily. According to the inventive method, the raw material of two polysilicon bars is melted simultaneously and flows to the crucible. By calculating the difference between the weight of the growing single crystal and that of the molten raw material, the insufficiency or excess of the raw material charged is obtained, thereby inducing the equivalent regulation. Further, the coordinates of the tips of the raw material of two polysilicon bars while molten is taken to control the power of the two heaters which melt the polysilicon bars respectively for keeping the coordinates of the two tips in a constant position. The supply rates and the coordinates of the two polysilicon bars are under control, so adequate raw material is charged to grow the single crystal.

摘要翻译： 根据连续充电的方法提供用于制造半导体单晶的原料的方法提供了克服原料充电不足或过量的问题的本发明的方法，并且稳定地对原料进行充电。 根据本发明的方法，两个多晶硅条的原料同时熔化并流到坩埚。 通过计算生长单晶的重量与熔融原料的重量之间的差异，可以获得填充原料的不足或过剩，从而引起等效调节。 此外，在熔融时，采用两个多晶硅条的原料的尖端的坐标来控制分别熔化多晶硅棒的两个加热器的功率，以将两个尖端的坐标保持在恒定位置。 供应速率和两个多晶硅棒的坐标受到控制，因此充足的原料被充电以生长单晶。

公开(公告)号：US08241424B2

公开(公告)日：2012-08-14

申请号：US11992510

申请日：2006-09-25

申请人： Tetsuhiro Iida ,  Yutaka Shiraishi ,  Junsuke Tomioka

发明人： Tetsuhiro Iida ,  Yutaka Shiraishi ,  Junsuke Tomioka

IPC分类号： C30B21/04

CPC分类号： C30B15/14 ,  C30B35/00 ,  Y10T117/1052 ,  Y10T117/1068

摘要： An upper side heater 10 is configured so that a current passage width becomes larger at a heater lower part than at a heater upper part. Thus, the upper side heater 10 has a current-carrying cross-sectional area which becomes larger at the heater lower part than at the heater upper part, a resistance value becomes accordingly smaller at the heater lower part than at the heater upper part, and a heat generation amount becomes relatively smaller at the heater lower part than at the heater upper part. Meanwhile, a lower side heater 20 is configured so that the current passage width becomes larger at the heater upper part than at the heater lower part. Thus, the current-carrying cross-sectional area of the lower side heater 20 becomes larger at the heater upper part than at the heater lower part, a resistance value becomes accordingly smaller at the heater upper part than at the heater lower part, and a heat generation amount becomes relatively smaller at the heater upper part than at the heater lower part.

摘要翻译： 上侧加热器10被构造成使得电流通道宽度在加热器下部比在加热器上部处变大。 因此，上侧加热器10具有比加热器上部在加热器下部变大的载流横截面积，加热器下部的电阻值相对于加热器上部部分相应地变小， 加热器下部的加热器上部发热量变得相对较小。 同时，下侧加热器20被构造成使得当前通路宽度在加热器上部比在加热器下部处变大。 因此，下侧加热器20的通电截面积在加热器上部比加热器下部变大，加热器上部的电阻值比加热器下部相应变小， 发热量在加热器上部比在加热器下部变得相对较小。

公开(公告)号：US07875116B2

公开(公告)日：2011-01-25

申请号：US11887244

申请日：2006-02-14

申请人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

发明人： Shinya Sadohara ,  Ryota Suewaka ,  Shiro Yoshino ,  Kozo Nakamura ,  Yutaka Shiraishi ,  Syunji Nonaka

IPC分类号： C30B15/20

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  C30B33/02 ,  H01L21/3225 ,  Y10T428/21

摘要： A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering source in a bulk are generated, in order to stabilize the quality of the annealed wafer. Considering that annealing a silicon wafer leads to an increase of density (quantity) of deposits associated with oxygen and nitrogen and forming a core of the SSDs, SSDs are decreased by reducing the density (quantity) of the deposits associated with oxygen and nitrogen by controlling three parameters of oxygen concentration, nitrogen concentration and cooling concentration during the process of pulling and growing the silicon single crystal 6 before annealing. Alternatively, SSD is reduced by polishing after annealing.

摘要翻译： 一种可降低SSD的方法，同时减少晶片表面上的SSD以外的空穴缺陷，这对于退火晶片是必需的，并且确保产生用作块体中的吸收源的BMD，以便稳定质量 退火晶片。 考虑到硅晶片的退火导致与氧和氮相关的沉积物的密度（量）增加并形成SSD的核心，通过控制通过控制与氧和氮相关的沉积物的密度（量）来降低SSD 在退火前拉拔生长硅单晶6的过程中，氧浓度，氮浓度和冷却浓度三个参数。 或者，退火后通过抛光减少SSD。

公开(公告)号：US20100100217A1

公开(公告)日：2010-04-22

申请号：US11989749

申请日：2006-06-07

申请人： Kenichi Bandoh ,  Shigeo Morimoto ,  Takuji Okumura ,  Tetsu Nagata ,  Masaru Shimada ,  Junsuke Tomioka ,  Yutaka Shiraishi ,  Takeshi Kodama

发明人： Kenichi Bandoh ,  Shigeo Morimoto ,  Takuji Okumura ,  Tetsu Nagata ,  Masaru Shimada ,  Junsuke Tomioka ,  Yutaka Shiraishi ,  Takeshi Kodama

IPC分类号： G05B13/04 ,  G05B13/02

CPC分类号： C30B15/20 ,  C30B29/06

摘要： To accurately control controlled object in a time variant system with a dead time such as a Czochralski method single crystal production device (CZ equipment). The dead time, the time constant, and the process gain value of a controlled object (CZ equipment) (200) are set. The process gain preset value has specified time variant characteristics. An output value y and its first-order and second-order time differentiated values are used as the state variable x of the controlled object (200). A nonlinear state predicting unit (206) predicts a state variable value x(t+Ld) at a future point in time after the dead time, based upon the current output value y, the dead time, the time constant, and the process gain preset value. A gain scheduled sliding mode control unit (212) performs a gain scheduled sliding mode control operation based upon the state variable value x(t+Ld) at the predicted future point in time, an output deviation z(t+Ld) at the future point in time, the time constant, and the set value of the process gain at the future point in time, to determine the manipulated variable uT of the controlled object (200).

摘要翻译： 在具有死区时间的时变系统中精确控制受控对象，例如Czochralski方法单晶生产装置（CZ设备）。 设定受控对象（CZ设备）（200）的死区时间，时间常数和过程增益值。 过程增益预设值具有指定的时变特征。 使用输出值y及其一阶和二阶时间微分值作为受控对象（200）的状态变量x。 非线性状态预测单元​​（206）基于当前输出值y，死区时间，时间常数和处理增益来预测死区时间后的未来时间点的状态变量值x（t + Ld） 预设值。 增益调度滑动模式控制单元（212）基于预测的未来时间点的状态变量值x（t + Ld），未来的输出偏差z（t + Ld），执行增益调度滑动模式控制操作 时间常数和未来时间点处理增益的设定值，以确定受控对象（200）的操纵变量uT。

公开(公告)号：US06217648B1

公开(公告)日：2001-04-17

申请号：US09284834

申请日：1999-04-21

申请人： Yutaka Shiraishi

发明人： Yutaka Shiraishi

IPC分类号： G30B1520

CPC分类号： C30B15/30 ,  Y10S117/911 ,  Y10T117/1068 ,  Y10T117/1072

摘要： With relatively simple arrangement and at low cost, the present invention provides a single crystal pulling apparatus, by which it is possible to prevent a single crystal from being turned to polycrystal, to move the crystal itself smoothly and gently from a necking portion during pulling operation of the single crystal, and to reliably hold the single crystal even in case of trouble such as power suspension. The apparatus comprises a support base 13 as a dish-shaped member to support a portion with larger diameter 30 from below under a seed crystal 21, pulley means 4 for rotating the support base and being movable between a position where the support base does not support the lower end of the portion with larger diameter of the single crystal and a position where it supports the lower end of the portion with larger diameter depending on the rotation angle, pulley rotating means 3a and 3b for rotating the pulley means and moving said support base between said two positions, and pulling lifting means 3a and 3b for moving up said support base by lifting the pulley means while controlling the rate.

摘要翻译： 以相对简单的布置和低成本的方式，本发明提供一种单晶拉制装置，通过该装置可以防止单晶转向多晶，从而在拉动操作期间使晶体本身平滑地轻轻地从颈缩部移动 的单晶，并且即使在诸如电力悬浮的故障的情况下也可靠地保持单晶。 该装置包括作为碟形构件的支撑基座13，用于在晶种21下方支撑下方具有较大直径的部分30;滑轮装置4，用于旋转支撑基座并且可在支撑基座不支撑的位置之间移动 具有单晶体直径较大的部分的下端和根据旋转角度支撑具有较大直径的部分的下端的位置，用于旋转滑轮装置的滑轮旋转装置3a和3b，并使所述支撑基座 在所述两个位置之间，以及拉动提升装置3a和3b，用于通过在控制速率的同时提起滑轮装置来向上移动所述支撑基座。

公开(公告)号：US5488923A

公开(公告)日：1996-02-06

申请号：US399558

申请日：1995-03-07

申请人： Masato Imai ,  Hiroyuki Noda ,  Yutaka Shiraishi ,  Keishi Niikura ,  Shoei Kurosaka

发明人： Masato Imai ,  Hiroyuki Noda ,  Yutaka Shiraishi ,  Keishi Niikura ,  Shoei Kurosaka

IPC分类号： C30B15/02 ,  C30B29/06 ,  H01L21/208 ,  C30B15/04

CPC分类号： C30B15/02

摘要： The present invention employs the construction wherein a resistor heater is disposed inside a protective cylinder whose tip is open to a molten liquid packing zone of a crucible inside a pulling apparatus so that the resistor heater is above the tip of a lower portion and temperature setting can be made so as to be capable of fusing a starting material. Since the tip of the protective cylinder is positioned inside the molten liquid at the time of pulling of a single crystal, the gaseous phase portion inside the protective cylinder and the gaseous phase portion inside the pulling apparatus are separated apart by the molten liquid and are independent of each other and a starting material polycrystal rod loaded into the protective cylinder can be supplied to the molten liquid surface inside the crucible while being molten at the lower part of the protective cylinder by the resistor heater. In this manner, the single crystal whose impurity concentration is substantially uniform in the longitudinal direction can be grown continuously.

摘要翻译： 本发明采用这样一种结构，其中电阻器加热器设置在保护筒内部，其顶端与拉制装置内的坩埚的熔融液体包装区域打开，使得电阻器加热器在下部的尖端上方，并且温度设定可以 使其能够熔化起始材料。 由于在拉制单晶时保护筒的尖端位于熔融液体内部，所以保护筒内部的气相部分和拉动装置内部的气相部分被熔融液体分开，并且是独立的 并且通过电阻加热器在保护筒的下部熔融时，可以将加载到保护筒中的原料多晶棒供给到坩埚内的熔融液面。 以这种方式，可以连续生长杂质浓度在纵向方向上基本均匀的单晶。